公开(公告)号：US10679938B2

公开(公告)日：2020-06-09

申请号：US16050383

申请日：2018-07-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Kuntal Joardar ,  Min Chu ,  Vijay Krishnamurthy ,  Tikno Harjono ,  Ankur Chauhan ,  Vinayak Hegde ,  Manish Srivastava

IPC: G11C17/00 ,  H01L23/525 ,  G11C17/16 ,  H01L27/112

Abstract: An electronic device comprises a first semiconductor die; a power transistor integrated in the first semiconductor die, the power transistor comprising a first gate, a first terminal, and a second terminal; a first sense transistor integrated in the first semiconductor die, the first sense transistor comprising a second gate and third and fourth terminals, the second gate coupled to the first gate and the fourth terminal coupled to the second terminal; a first resistor integrated in the first semiconductor die, the first resistor has a first temperature coefficient; a second sense transistor integrated in the first semiconductor die, the second sense transistor comprising a third gate and seventh and eighth terminals, the third gate coupled to the first gate and the eighth terminal coupled to the second terminal; and a second resistor integrated in the first semiconductor die, the second resistor has a second temperature coefficient.

公开(公告)号：US11152341B2

公开(公告)日：2021-10-19

申请号：US16460870

申请日：2019-07-02

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Kuntal Joardar ,  Min Chu ,  Vijay Krishnamurthy ,  Tikno Harjono

IPC: H01L25/07 ,  H01L25/16 ,  G01R31/28 ,  G11C11/4074 ,  H01L29/66

Abstract: In some examples, an integrated circuit includes a plurality of power modules formed on a substrate, including a first power module located between second and third power modules. The first power module is configured to conduct a load current, and includes a power transistor and first and second sense transistors. The first sense transistor is disposed at a first position between the second power module and a central axis of the first power module, and the second sense transistor is disposed at a second position between the third power module and the central axis. The first sense transistor is configured to conduct a first sense current; and the second sense transistor is configured to conduct a second sense current. The first and second sense transistors are configured to direct the first and second sense currents toward a measurement circuit that is configured to determine a derived sense current indicative of the load current.

公开(公告)号：US10422818B2

公开(公告)日：2019-09-24

申请号：US15859470

申请日：2017-12-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Tikno Harjono ,  Vijay Krishnamurthy ,  Min Chu ,  Kuntal Joardar ,  Gary Eugene Daum ,  Subrato Roy ,  Vinayak Hegde ,  Ankur Chauhan ,  Sathish Vallamkonda ,  Md Abidur Rahman ,  Eung Jung Kim

IPC: G01R15/14 ,  H01L27/06 ,  H03K17/567 ,  H01L25/18 ,  H01L49/02

Abstract: An electronic device comprises: a first semiconductor die; a power transistor integrated in the first semiconductor die, the power transistor comprising a gate, a first terminal, and a second terminal; a sense transistor integrated in the first semiconductor die, the sense transistor comprising a gate coupled to the gate of the power transistor, a first terminal, and a second terminal coupled to the second terminal of the power transistor; and a first resistor integrated in the first semiconductor die, the first resistor comprising a polysilicon section and a metal section coupled to the polysilicon section, the first resistor comprising a first terminal and a second terminal, wherein the first terminal of the first resistor is coupled to the first terminal of the sense transistor.