公开(公告)号：US11574902B2

公开(公告)日：2023-02-07

申请号：US16264065

申请日：2019-01-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Eung Jung Kim ,  Kyle Clifton Schulmeyer ,  Sualp Aras ,  Md Abidur Rahman ,  Xiaochun Zhao

IPC: G05F1/565 ,  H01L27/02 ,  H02H9/04

Abstract: A system includes a clamp network coupled between an input and an output and configured to clamp a voltage between the input and the output to a first clamp voltage based on the presence of a trigger signal and to a second clamp voltage based on the absence of the trigger signal. The second clamp voltage is greater than the first clamp voltage and the first clamp voltage is less than a breakdown voltage of the power transistor device. A detector circuit is coupled to the input and the output. A power transistor device may also be coupled between the input and the output. The detector circuit is configured to detect a pulse signal at the input or the output while the power transistor device is off and to generate the trigger signal for a time interval based on detecting the pulse signal.

公开(公告)号：US20160036432A1

公开(公告)日：2016-02-04

申请号：US14817666

申请日：2015-08-04

Applicant: Texas Instruments Incorporated

Inventor： Vikrant Dhamdhere ,  Md Abidur Rahman

IPC: H03K17/30 ,  G05F1/595

CPC classification number: H03K17/302 ,  G05F1/595

Abstract: This disclosure describes techniques for generating relatively low regulated power supply voltages over a relatively wide range of input voltages. The techniques for generating the regulated voltages may include using at least two different pass transistors to regulate an output voltage of a voltage regulator. Both the turn-on threshold voltage and the maximum drain-to-source voltage rating of the first pass transistor may be greater than the corresponding characteristics of the second pass transistor. Using two different pass transistors with two different turn-on threshold voltages and two different maximum drain-to-source voltage ratings may increase the range of voltages over which a voltage regulator can generate a relatively low output voltage relative to the range of voltages that would be allowable if a single type of pass transistor were used.

Abstract translation: 本公开描述了在相对宽的输入电压范围内产生相对低调节的电源电压的技术。 用于产生调节电压的技术可以包括使用至少两个不同的传输晶体管来调节电压调节器的输出电压。 第一通过晶体管的导通阈值电压和最大漏极 - 源极电压额定值都可以大于第二传输晶体管的相应特性。 使用具有两个不同导通阈值电压和两个不同最大漏极 - 源极电压额定值的两个不同通过晶体管可以增加电压范围，电压调节器可以相对于电压范围产生相对较低的输出电压 如果使用单一类型的传输晶体管是允许的。

公开(公告)号：US10422818B2

公开(公告)日：2019-09-24

申请号：US15859470

申请日：2017-12-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Tikno Harjono ,  Vijay Krishnamurthy ,  Min Chu ,  Kuntal Joardar ,  Gary Eugene Daum ,  Subrato Roy ,  Vinayak Hegde ,  Ankur Chauhan ,  Sathish Vallamkonda ,  Md Abidur Rahman ,  Eung Jung Kim

IPC: G01R15/14 ,  H01L27/06 ,  H03K17/567 ,  H01L25/18 ,  H01L49/02

Abstract: An electronic device comprises: a first semiconductor die; a power transistor integrated in the first semiconductor die, the power transistor comprising a gate, a first terminal, and a second terminal; a sense transistor integrated in the first semiconductor die, the sense transistor comprising a gate coupled to the gate of the power transistor, a first terminal, and a second terminal coupled to the second terminal of the power transistor; and a first resistor integrated in the first semiconductor die, the first resistor comprising a polysilicon section and a metal section coupled to the polysilicon section, the first resistor comprising a first terminal and a second terminal, wherein the first terminal of the first resistor is coupled to the first terminal of the sense transistor.

公开(公告)号：US09966941B2

公开(公告)日：2018-05-08

申请号：US14817666

申请日：2015-08-04

Applicant: Texas Instruments Incorporated

Inventor： Vikrant Dhamdhere ,  Md Abidur Rahman

IPC: G05F1/00 ,  H03K17/30 ,  G05F1/595

CPC classification number: H03K17/302 ,  G05F1/595

Abstract: This disclosure describes techniques for generating relatively low regulated power supply voltages over a relatively wide range of input voltages. The techniques for generating the regulated voltages may include using at least two different pass transistors to regulate an output voltage of a voltage regulator. Both the turn-on threshold voltage and the maximum drain-to-source voltage rating of the first pass transistor may be greater than the corresponding characteristics of the second pass transistor. Using two different pass transistors with two different turn-on threshold voltages and two different maximum drain-to-source voltage ratings may increase the range of voltages over which a voltage regulator can generate a relatively low output voltage relative to the range of voltages that would be allowable if a single type of pass transistor were used.

公开(公告)号：US11595034B2

公开(公告)日：2023-02-28

申请号：US17538547

申请日：2021-11-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Cameron Wayne Phillips ,  Wenchao Qu ,  Tianhong Yang ,  Md Abidur Rahman

IPC: H03K17/0412 ,  H03K17/693 ,  H03K17/082

Abstract: A load switch includes a switch input, a switch output, a first field-effect transistor (FET), and a second FET. The switch input is adapted to be coupled to a controller output of a controller. The switch output is adapted to be coupled to a controller input of the controller. The first FET has a gate and a source. The gate of the first FET is coupled to the switch input. The second FET has a gate and a source. The gate of the second FET is coupled to the source of the first FET. The source of the second FET is coupled to the switch output.