公开(公告)号：US20200312710A1

公开(公告)日：2020-10-01

申请号：US16546499

申请日：2019-08-21

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Hong YANG ,  Seetharaman SRIDHAR ,  Ya ping CHEN ,  Fei MA ,  Yunlong LIU ,  Sunglyong KIM

IPC: H01L21/762 ,  H01L21/763 ,  H01L21/324 ,  H01L21/308 ,  H01L21/02 ,  H01L29/66

Abstract: A semiconductor device has a semiconductor material in a substrate. The semiconductor device has an MOS transistor. A trench in the substrate extends from a top surface of the substrate) into the semiconductor material. A shield is disposed in the trench. The shield has a contact portion which extends toward a top surface of the trench. A gate of the MOS transistor is disposed in the trench over the shield. The gate is electrically isolated from the shield. The gate is electrically isolated from the contact portion of the shield by a shield isolation layer which covers an angled surface of the contact portion extending toward the top of the trench. Methods of forming the semiconductor device are disclosed.

公开(公告)号：US20220208601A1

公开(公告)日：2022-06-30

申请号：US17695119

申请日：2022-03-15

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Hong YANG ,  Seetharaman SRIDHAR ,  Ya ping CHEN ,  Fei MA ,  Yunlong LIU ,  Sunglyong KIM

IPC: H01L21/762 ,  H01L21/763 ,  H01L29/66 ,  H01L21/308 ,  H01L21/02 ,  H01L21/324

Abstract: A semiconductor device has a semiconductor material in a substrate. The semiconductor device has an MOS transistor. A trench in the substrate extends from a top surface of the substrate) into the semiconductor material. A shield is disposed in the trench. The shield has a contact portion which extends toward a top surface of the trench. A gate of the MOS transistor is disposed in the trench over the shield. The gate is electrically isolated from the shield. The gate is electrically isolated from the contact portion of the shield by a shield isolation layer which covers an angled surface of the contact portion extending toward the top of the trench. Methods of forming the semiconductor device are disclosed.