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1.发明公开公开(公告)号：US20240209545A1
公开(公告)日：2024-06-27
申请号：US18294938
申请日：2021-12-08
发明人： Shujie WANG , Niefeng SUN , Aimin BU , Lijie FU , Huimin SHAO , Zheng LIU , Senfeng XU , Yanlei SHI , Xiaolan LI , Yang WANG , Tongnian SUN
摘要： The present invention discloses a method for preparing a compound semiconductor crystal by continuous LEC and VGF combination after injection synthesis, including: step A, vacuuming a system for preparing compounds and filling the system with an inert gas; step B, heating to melt the metallic raw material and boron oxide I in a synthesis crucible; step C, heating to melt boron oxide II, and moving the synthesis injection system downwards to move the end of the injection synthesis tube until the metallic raw material in the crucible is synthesized into a first melt; step D, slowly reducing the pressure inside the VGF crucible so that the first melt enters the VGF crucible to form a second melt; etc. In the present invention, the upper part is a VGF growth part and the lower part is a synthesis part; the synthesis part entering the VGF growth part by reverse sucking, while the VGF growth part is configured with a seed crystal rod and an observation system, and also can be subjected to gas control. At the beginning, LEC seeding and diameter enlarging at a high temperature gradient are implemented, and then the grown crystal is used for VGF crystal growth at a low temperature gradient, so that a high-quality crystal with low defects can be prepared with high yield.
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公开(公告)号：US20240035192A1
公开(公告)日：2024-02-01
申请号：US17797395
申请日：2021-07-05
发明人： Shujie WANG , Niefeng SUN , Yang WANG , Xiaolan LI , Yanlei SHI , Huimin SHAO , Lijie FU , Zheng LIU , Tongnian SUN , Huisheng LIU
摘要： A polishing device for an indium phosphide substrate and a polishing process are provided, which belong to the technical field of polishing of indium phosphide. The polishing device includes an electrolyzer, and further includes an anode disc supporting rod positioned at a center position of a bottom of the electrolyzer by virtue of an anode lifting mechanism; an anode disc hinged to an upper end of the anode disc supporting rod; a cathode disc supporting rod positioned above the anode disc by virtue of a cathode lifting mechanism; a cathode disc arranged at a lower end of the cathode disc supporting rod; a graphite electrode plate arranged on the anode disc by virtue of a connection mechanism; a group of planet gears arranged on an upper end surface of the graphite electrode plate by virtue of an intermediate driving mechanism; an anode rotation driving mechanism connected to the intermediate driving mechanism; a cathode rotation driving mechanism connected to the cathode disc supporting rod; and a polishing direct current (DC) power supply respectively connected to contacts of the anode disc supporting rod and the cathode disc supporting rod by virtue of wires. By improving the structure of the device and the manufacturing process, a requirement for the environment in the polishing process of indium phosphide is greatly reduced, and electrochemical and mechanical dual-polishing is achieved.
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