公开(公告)号：US10340144B2

公开(公告)日：2019-07-02

申请号：US15404675

申请日：2017-01-12

申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA ,  Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies, LLC

发明人： Rachel A. Segalman ,  Peter Trefonas, III ,  Bhooshan C. Popere ,  Andrew T. Heitsch

IPC分类号： H01L21/225 ,  H01L21/02 ,  H01L21/22 ,  C09D153/00 ,  H01L21/3105 ,  H01L29/167 ,  H01L29/207

摘要： Disclosed herein is a method for doping a substrate, comprising disposing a coating of a composition comprising a copolymer, a dopant precursor and a solvent on a substrate; where the copolymer is capable of phase segregating and embedding the dopant precursor while in solution; and annealing the substrate at a temperature of 750 to 1300° C. for 0.1 second to 24 hours to diffuse the dopant into the substrate. Disclosed herein too is a semiconductor substrate comprising embedded dopant domains of diameter 3 to 30 nanometers; where the domains comprise Group 13 or Group 15 atoms, wherein the embedded spherical domains are located within 30 nanometers of the substrate surface.

公开(公告)号：US20160035572A1

公开(公告)日：2016-02-04

申请号：US14699434

申请日：2015-04-29

申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA ,  Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies LLC

发明人： Rachel A. Segalman ,  Peter Trefonas, III ,  Bhooshan C. Popere ,  Andrew T. Heitsch

IPC分类号： H01L21/225 ,  H01L21/02 ,  H01L29/207 ,  H01L21/324 ,  H01L29/167

CPC分类号： H01L21/2254 ,  C09D153/00 ,  H01L21/02118 ,  H01L21/2225 ,  H01L21/2258 ,  H01L21/31058 ,  H01L29/167 ,  H01L29/207

摘要： Disclosed herein is a method for doping a substrate, comprising disposing a coating of a composition comprising a copolymer, a dopant precursor and a solvent on a substrate; where the copolymer is capable of phase segregating and embedding the dopant precursor while in solution; and annealing the substrate at a temperature of 750 to 1300° C. for 0.1 second to 24 hours to diffuse the dopant into the substrate. Disclosed herein too is a semiconductor substrate comprising embedded dopant domains of diameter 3 to 30 nanometers; where the domains comprise Group 13 or Group 15 atoms, wherein the embedded spherical domains are located within 30 nanometers of the substrate surface.

摘要翻译： 本文公开了一种用于掺杂衬底的方法，包括在衬底上设置包含共聚物，掺杂剂前体和溶剂的组合物的涂层; 其中共聚物能够在溶液中相分离和包埋掺杂剂前体; 并在750〜1300℃的温度下退火衬底0.1秒〜24小时，使掺杂剂扩散到衬底中。 本文还公开了包括直径为3至30纳米的掺杂剂掺杂区域的半导体衬底; 其中结构域包含第13族或第15族原子，其中嵌入的球形域位于衬底表面的30纳米内。

公开(公告)号：US20170194150A1

公开(公告)日：2017-07-06

申请号：US15404675

申请日：2017-01-12

申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA ,  Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies, LLC

发明人： Rachel A. Segalman ,  Peter Trefonas, III ,  Bhooshan C. Popere ,  Andrew T. Heitsch

IPC分类号： H01L21/225 ,  H01L29/207 ,  H01L29/167 ,  H01L21/02 ,  H01L21/3105

CPC分类号： H01L21/2254 ,  C09D153/00 ,  H01L21/02118 ,  H01L21/2225 ,  H01L21/2258 ,  H01L21/31058 ,  H01L29/167 ,  H01L29/207

摘要： Disclosed herein is a method for doping a substrate, comprising disposing a coating of a composition comprising a copolymer, a dopant precursor and a solvent on a substrate; where the copolymer is capable of phase segregating and embedding the dopant precursor while in solution; and annealing the substrate at a temperature of 750 to 1300° C. for 0.1 second to 24 hours to diffuse the dopant into the substrate. Disclosed herein too is a semiconductor substrate comprising embedded dopant domains of diameter 3 to 30 nanometers; where the domains comprise Group 13 or Group 15 atoms, wherein the embedded spherical domains are located within 30 nanometers of the substrate surface.

公开(公告)号：US09576799B2

公开(公告)日：2017-02-21

申请号：US14699434

申请日：2015-04-29

申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA ,  Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies LLC

发明人： Rachel A. Segalman ,  Peter Trefonas, III ,  Bhooshan C. Popere ,  Andrew T. Heitsch

IPC分类号： H01L21/225 ,  H01L21/02 ,  H01L21/22

CPC分类号： H01L21/2254 ,  C09D153/00 ,  H01L21/02118 ,  H01L21/2225 ,  H01L21/2258 ,  H01L21/31058 ,  H01L29/167 ,  H01L29/207

摘要： Disclosed herein is a method for doping a substrate, comprising disposing a coating of a composition comprising a copolymer, a dopant precursor and a solvent on a substrate; where the copolymer is capable of phase segregating and embedding the dopant precursor while in solution; and annealing the substrate at a temperature of 750 to 1300° C. for 0.1 second to 24 hours to diffuse the dopant into the substrate. Disclosed herein too is a semiconductor substrate comprising embedded dopant domains of diameter 3 to 30 nanometers; where the domains comprise Group 13 or Group 15 atoms, wherein the embedded spherical domains are located within 30 nanometers of the substrate surface.

摘要翻译： 本文公开了一种用于掺杂衬底的方法，包括在衬底上设置包含共聚物，掺杂剂前体和溶剂的组合物的涂层; 其中共聚物能够在溶液中相分离和包埋掺杂剂前体; 并在750〜1300℃的温度下退火衬底0.1秒〜24小时，使掺杂剂扩散到衬底中。 本文还公开了包括直径为3至30纳米的掺杂剂掺杂区域的半导体衬底; 其中结构域包含第13族或第15族原子，其中嵌入的球形域位于衬底表面的30纳米内。

公开(公告)号：US20200020538A1

公开(公告)日：2020-01-16

申请号：US16032695

申请日：2018-07-11

申请人： Rohm and Haas Electronic Materials LLC ,  The Regents of the University of California

发明人： Yuanyi Zhang ,  Reika Katsumata ,  Mingqi Li ,  Bhooshan C. Popere ,  Andrew T. Heitsch ,  Peter Trefonas, III ,  Rachel A. Segalman

IPC分类号： H01L21/225 ,  H01L21/22 ,  H01L21/324

摘要： Disclosed herein is a method for doping a substrate, comprising disposing a composition comprising a dopant-containing copolymer and a solvent on a substrate; and annealing the substrate at a temperature of 750 to 1300° C. for 0.1 second to 24 hours to diffuse a dopant into the substrate; wherein the dopant-containing copolymer comprises a non-dopant-containing polymer and a dopant-containing polymer; and where the dopant-containing polymer is a polymer having a covalently or ionically bound dopant atom and is present in a smaller volume fraction than the non-dopant-containing polymer.