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公开(公告)号：US20160035572A1
公开(公告)日：2016-02-04
申请号：US14699434
申请日：2015-04-29
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , Rohm and Haas Electronic Materials LLC , Dow Global Technologies LLC
IPC分类号： H01L21/225 , H01L21/02 , H01L29/207 , H01L21/324 , H01L29/167
CPC分类号： H01L21/2254 , C09D153/00 , H01L21/02118 , H01L21/2225 , H01L21/2258 , H01L21/31058 , H01L29/167 , H01L29/207
摘要： Disclosed herein is a method for doping a substrate, comprising disposing a coating of a composition comprising a copolymer, a dopant precursor and a solvent on a substrate; where the copolymer is capable of phase segregating and embedding the dopant precursor while in solution; and annealing the substrate at a temperature of 750 to 1300° C. for 0.1 second to 24 hours to diffuse the dopant into the substrate. Disclosed herein too is a semiconductor substrate comprising embedded dopant domains of diameter 3 to 30 nanometers; where the domains comprise Group 13 or Group 15 atoms, wherein the embedded spherical domains are located within 30 nanometers of the substrate surface.
摘要翻译： 本文公开了一种用于掺杂衬底的方法，包括在衬底上设置包含共聚物，掺杂剂前体和溶剂的组合物的涂层; 其中共聚物能够在溶液中相分离和包埋掺杂剂前体; 并在750〜1300℃的温度下退火衬底0.1秒〜24小时，使掺杂剂扩散到衬底中。 本文还公开了包括直径为3至30纳米的掺杂剂掺杂区域的半导体衬底; 其中结构域包含第13族或第15族原子，其中嵌入的球形域位于衬底表面的30纳米内。
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公开(公告)号：US09576799B2
公开(公告)日：2017-02-21
申请号：US14699434
申请日：2015-04-29
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , Rohm and Haas Electronic Materials LLC , Dow Global Technologies LLC
IPC分类号： H01L21/225 , H01L21/02 , H01L21/22
CPC分类号： H01L21/2254 , C09D153/00 , H01L21/02118 , H01L21/2225 , H01L21/2258 , H01L21/31058 , H01L29/167 , H01L29/207
摘要： Disclosed herein is a method for doping a substrate, comprising disposing a coating of a composition comprising a copolymer, a dopant precursor and a solvent on a substrate; where the copolymer is capable of phase segregating and embedding the dopant precursor while in solution; and annealing the substrate at a temperature of 750 to 1300° C. for 0.1 second to 24 hours to diffuse the dopant into the substrate. Disclosed herein too is a semiconductor substrate comprising embedded dopant domains of diameter 3 to 30 nanometers; where the domains comprise Group 13 or Group 15 atoms, wherein the embedded spherical domains are located within 30 nanometers of the substrate surface.
摘要翻译： 本文公开了一种用于掺杂衬底的方法，包括在衬底上设置包含共聚物，掺杂剂前体和溶剂的组合物的涂层; 其中共聚物能够在溶液中相分离和包埋掺杂剂前体; 并在750〜1300℃的温度下退火衬底0.1秒〜24小时，使掺杂剂扩散到衬底中。 本文还公开了包括直径为3至30纳米的掺杂剂掺杂区域的半导体衬底; 其中结构域包含第13族或第15族原子，其中嵌入的球形域位于衬底表面的30纳米内。
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公开(公告)号：US10340144B2
公开(公告)日：2019-07-02
申请号：US15404675
申请日：2017-01-12
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , Rohm and Haas Electronic Materials LLC , Dow Global Technologies, LLC
IPC分类号： H01L21/225 , H01L21/02 , H01L21/22 , C09D153/00 , H01L21/3105 , H01L29/167 , H01L29/207
摘要： Disclosed herein is a method for doping a substrate, comprising disposing a coating of a composition comprising a copolymer, a dopant precursor and a solvent on a substrate; where the copolymer is capable of phase segregating and embedding the dopant precursor while in solution; and annealing the substrate at a temperature of 750 to 1300° C. for 0.1 second to 24 hours to diffuse the dopant into the substrate. Disclosed herein too is a semiconductor substrate comprising embedded dopant domains of diameter 3 to 30 nanometers; where the domains comprise Group 13 or Group 15 atoms, wherein the embedded spherical domains are located within 30 nanometers of the substrate surface.
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公开(公告)号：US20170194150A1
公开(公告)日：2017-07-06
申请号：US15404675
申请日：2017-01-12
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , Rohm and Haas Electronic Materials LLC , Dow Global Technologies, LLC
IPC分类号： H01L21/225 , H01L29/207 , H01L29/167 , H01L21/02 , H01L21/3105
CPC分类号： H01L21/2254 , C09D153/00 , H01L21/02118 , H01L21/2225 , H01L21/2258 , H01L21/31058 , H01L29/167 , H01L29/207
摘要： Disclosed herein is a method for doping a substrate, comprising disposing a coating of a composition comprising a copolymer, a dopant precursor and a solvent on a substrate; where the copolymer is capable of phase segregating and embedding the dopant precursor while in solution; and annealing the substrate at a temperature of 750 to 1300° C. for 0.1 second to 24 hours to diffuse the dopant into the substrate. Disclosed herein too is a semiconductor substrate comprising embedded dopant domains of diameter 3 to 30 nanometers; where the domains comprise Group 13 or Group 15 atoms, wherein the embedded spherical domains are located within 30 nanometers of the substrate surface.
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公开(公告)号：US20150056793A1
公开(公告)日：2015-02-26
申请号：US13972307
申请日：2013-08-21
IPC分类号： H01L21/225
CPC分类号： H01L21/2254 , H01L21/0455 , H01L21/2225 , H01L21/225 , H01L21/228 , H01L21/385
摘要： Disclosed herein is a method for doping a substrate, comprising disposing a coating of a composition comprising a dopant-containing polymer and a non-polar solvent on a substrate; and annealing the substrate at a temperature of 750 to 1300° C. for 1 second to 24 hours to diffuse the dopant into the substrate; wherein the dopant-containing polymer is a polymer having a covalently bound dopant atom; wherein the dopant-containing polymer is free of nitrogen and silicon; and wherein the method is free of a step of forming an oxide capping layer over the coating prior to the annealing step.
摘要翻译： 本文公开了一种用于掺杂衬底的方法，包括在衬底上设置包含含掺杂剂的聚合物和非极性溶剂的组合物的涂层; 并在750-1300℃的温度下退火衬底1秒至24小时以将掺杂剂扩散到衬底中; 其中所述含掺杂剂的聚合物是具有共价结合的掺杂剂原子的聚合物; 其中所述含掺杂剂的聚合物不含氮和硅; 并且其中所述方法没有在所述退火步骤之前在所述涂层上形成氧化物覆盖层的步骤。
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公开(公告)号：US09076719B2
公开(公告)日：2015-07-07
申请号：US13972307
申请日：2013-08-21
IPC分类号： H01L21/38 , H01L21/22 , H01L21/225 , H01L21/04 , H01L21/385
CPC分类号： H01L21/2254 , H01L21/0455 , H01L21/2225 , H01L21/225 , H01L21/228 , H01L21/385
摘要： Disclosed herein is a method for doping a substrate, comprising disposing a coating of a composition comprising a dopant-containing polymer and a non-polar solvent on a substrate; and annealing the substrate at a temperature of 750 to 1300° C. for 1 second to 24 hours to diffuse the dopant into the substrate; wherein the dopant-containing polymer is a polymer having a covalently bound dopant atom; wherein the dopant-containing polymer is free of nitrogen and silicon; and wherein the method is free of a step of forming an oxide capping layer over the coating prior to the annealing step.
摘要翻译： 本文公开了一种用于掺杂衬底的方法，包括在衬底上设置包含含掺杂剂的聚合物和非极性溶剂的组合物的涂层; 并在750-1300℃的温度下退火衬底1秒至24小时以将掺杂剂扩散到衬底中; 其中所述含掺杂剂的聚合物是具有共价结合的掺杂剂原子的聚合物; 其中所述含掺杂剂的聚合物不含氮和硅; 并且其中所述方法没有在所述退火步骤之前在所述涂层上形成氧化物覆盖层的步骤。
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7.发明申请公开(公告)号：US20200020538A1
公开(公告)日：2020-01-16
申请号：US16032695
申请日：2018-07-11
发明人： Yuanyi Zhang , Reika Katsumata , Mingqi Li , Bhooshan C. Popere , Andrew T. Heitsch , Peter Trefonas, III , Rachel A. Segalman
IPC分类号： H01L21/225 , H01L21/22 , H01L21/324
摘要： Disclosed herein is a method for doping a substrate, comprising disposing a composition comprising a dopant-containing copolymer and a solvent on a substrate; and annealing the substrate at a temperature of 750 to 1300° C. for 0.1 second to 24 hours to diffuse a dopant into the substrate; wherein the dopant-containing copolymer comprises a non-dopant-containing polymer and a dopant-containing polymer; and where the dopant-containing polymer is a polymer having a covalently or ionically bound dopant atom and is present in a smaller volume fraction than the non-dopant-containing polymer.
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8.发明申请公开(公告)号：US20180033971A1
公开(公告)日：2018-02-01
申请号：US15661442
申请日：2017-07-27
CPC分类号： H01L51/0036 , C08G61/122 , C08G61/123 , C08G61/126 , C08G2261/11 , C08G2261/12 , C08G2261/1412 , C08G2261/146 , C08G2261/312 , C08G2261/3241 , C08G2261/3243 , C08G2261/3246 , C08G2261/3321 , C08G2261/344 , C08G2261/92 , H01L51/0043 , H01L51/0558 , H01L51/0566
摘要： Design of side chains yielding highly amphiphilic conjugated polymers is proven to be an effective and general method to access lyotropic liquid crystalline mesophases, allowing greater control over crystalline morphology and improving transistor performance. The general strategy enables variations in structure and interactions that impact alignment and use of liquid crystalline alignment methods. Specifically, solvent-polymer interactions are harnessed to facilitate the formation of high quality polymer crystals in solution. Crystallinity developed in solution is then transferred to the solid state, and thin films of donor-acceptor copolymers cast from lyotropic solutions exhibit improved crystalline order in both the alkyl and π-stacking directions. Due to this improved crystallinity, transistors with active layers cast from lyotropic solutions exhibit a significant improvement in carrier mobility compared to those cast from isotropic solution. One or more embodiments of the present invention achieve a maximum carrier mobility of 0.61 cm2V−1s−1.
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9.发明授权公开(公告)号：US09831008B2
公开(公告)日：2017-11-28
申请号：US13685505
申请日：2012-11-26
CPC分类号： H01B1/128 , B82Y30/00 , H01L35/24 , H01L51/0037 , Y10S977/755 , Y10T428/12569 , Y10T428/2933 , Y10T428/294
摘要： The present invention provides for an inorganic nanostructure-organic polymer heterostructure, useful as a thermoelectric composite material, comprising (a) an inorganic nanostructure, and (b) an electrically conductive organic polymer disposed on the inorganic nanostructure. Both the inorganic nanostructure and the electrically conductive organic polymer are solution-processable.
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公开(公告)号：US20210284805A1
公开(公告)日：2021-09-16
申请号：US17191422
申请日：2021-03-03
发明人： Rachel A. Segalman , Craig J. Hawker , Raphaele Clement , Javier Read de Alaniz , Nicole Michenfelder-Schauser , Peter Richardson , Andrei Nikolaev , Caitlin Sample , Hengbin Wang
IPC分类号： C08G77/32 , C08G77/28 , C08G77/20 , H01M10/0565
摘要： A composition of matter useful in an electrolyte, comprising a polymer including: a repeat unit, the repeat unit including a backbone section; and a side chain attached to the backbone section, wherein the side chain includes a ligand moiety configured to ionically bond to a lithium ion. The polymer has a glass transition temperature (e.g., less than room temperature) wherein the polymer is in a solid state during operation of a lithium ion battery comprising an electrolyte including the polymer.
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