公开(公告)号：US20230029519A1

公开(公告)日：2023-02-02

申请号：US17958868

申请日：2022-10-03

申请人： THE TRUSTEES OF DARTMOUTH COLLEGE

发明人： Zhiyuan WANG ,  Xiaoxin WANG ,  Jifeng LIU

IPC分类号： H01L31/119 ,  H01L27/148 ,  H01L31/0232 ,  H01L27/146 ,  H01L27/144

摘要： Disclosed are infrared (IR) light detectors. The detectors operate by generating hot electrons in a metallic absorber layer on photon absorption, the electrons being transported through an energy barrier of an insulating layer to a metal or semiconductor conductive layer. The energy barrier is set to bar response to wavelengths longer than a maximum wavelength. Particular embodiments also have a pattern of metallic shapes above the metallic absorber layer that act to increase photon absorption while reflecting photons of short wavelengths; these particular embodiments have a band-pass response.

公开(公告)号：US20230343887A1

公开(公告)日：2023-10-26

申请号：US18216496

申请日：2023-06-29

申请人： THE TRUSTEES OF DARTMOUTH COLLEGE

发明人： Zhiyuan WANG ,  Xiaoxin WANG ,  Jifeng LIU

IPC分类号： H01L27/146 ,  H01L27/148 ,  H01L31/119 ,  H01L31/0232 ,  H01L27/144

CPC分类号： H01L31/119 ,  H01L27/1446 ,  H01L27/146 ,  H01L27/14875 ,  H01L31/02327

摘要： Disclosed are infrared (IR) light detectors. The detectors operate by generating hot electrons in a metallic absorber layer on photon absorption, the electrons being transported through an energy barrier of an insulating layer to a metal or semiconductor conductive layer. The energy barrier is set to bar response to wavelengths longer than a maximum wavelength. Particular embodiments also have a pattern of metallic shapes above the metallic absorber layer that act to increase photon absorption while reflecting photons of short wavelengths; these particular embodiments have a band-pass response.

公开(公告)号：US20200044111A1

公开(公告)日：2020-02-06

申请号：US16606829

申请日：2018-04-20

申请人： THE TRUSTEES OF DARTMOUTH COLLEGE

发明人： Zhiyuan WANG ,  Xiaoxin WANG ,  Jifeng LIU

IPC分类号： H01L31/119 ,  H01L31/0232 ,  H01L27/148

摘要： Disclosed are infrared (IR) light detectors. The detectors operate by generating hot electrons in a metallic absorber layer on photon absorption, the electrons being transported through an energy barrier of an insulating layer to a metal or semiconductor conductive layer. The energy barrier is set to bar response to wavelengths longer than a maximum wavelength. Particular embodiments also have a pattern of metallic shapes above the metallic absorber layer that act to increase photon absorption while reflecting photons of short wavelengths; these particular embodiments have a band-pass response.