公开(公告)号：US20190256998A1

公开(公告)日：2019-08-22

申请号：US16273601

申请日：2019-02-12

申请人： THE TRUSTEES OF THE STEVENS INSTITUTE OF TECHNOLOGY

发明人： Eui-Hyeok Yang ,  Xiaotian Wang ,  Kyungnam Kang ,  Siwei Chen

IPC分类号： C30B25/04 ,  H01L21/02 ,  H01L21/78 ,  H01L21/683 ,  G03F7/00 ,  C23C16/04 ,  C23C16/30 ,  C30B25/18 ,  C30B29/46 ,  C09J5/06 ,  C09J7/35

摘要： The exemplary embodiments describe techniques for a controlled chemical vapor deposition growth and transfer of arrayed TMD monolayers on predetermined locations, which enable the formation of single crystalline TMD monolayer arrays on specific locations. The unique growth process includes the patterning of transition metal oxide (e.g., MoO3) on the source substrate contacting the growth substrate face-to-face, where the growth of single crystalline TMD monolayers with controlled size and location, exclusively on predetermined locations on the growth substrates is accomplished. These TMD arrays can be align-transferred using a unique process that combines the wet and stamping transfer processes onto any target substrate with a pin-point accuracy, which dramatically enhances the integrity of transferred TMDs.

公开(公告)号：US10889914B2

公开(公告)日：2021-01-12

申请号：US16273601

申请日：2019-02-12

申请人： THE TRUSTEES OF THE STEVENS INSTITUTE OF TECHNOLOGY

发明人： Eui-Hyeok Yang ,  Xiaotian Wang ,  Kyungnam Kang ,  Siwei Chen

IPC分类号： C09J7/00 ,  C09J5/00 ,  C23C16/00 ,  C30B25/00 ,  C30B29/00 ,  G03F7/00 ,  H01L21/00 ,  C30B25/04 ,  H01L21/02 ,  H01L21/78 ,  H01L21/683 ,  C23C16/04 ,  C23C16/30 ,  C30B25/18 ,  C30B29/46 ,  C09J5/06 ,  C09J7/35 ,  H01L21/20

摘要： The exemplary embodiments describe techniques for a controlled chemical vapor deposition growth and transfer of arrayed TMD monolayers on predetermined locations, which enable the formation of single crystalline TMD monolayer arrays on specific locations. The unique growth process includes the patterning of transition metal oxide (e.g., MoO3) on the source substrate contacting the growth substrate face-to-face, where the growth of single crystalline TMD monolayers with controlled size and location, exclusively on predetermined locations on the growth substrates is accomplished. These TMD arrays can be align-transferred using a unique process that combines the wet and stamping transfer processes onto any target substrate with a pin-point accuracy, which dramatically enhances the integrity of transferred TMDs.