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公开(公告)号：US20070002618A1
公开(公告)日：2007-01-04
申请号：US11427337
申请日：2006-06-28
IPC分类号： G11C11/34
CPC分类号： G11C13/003 , G11C13/0004 , G11C13/004 , G11C13/0069 , G11C2013/0071 , G11C2213/74
摘要： A memory element comprises a resistance element having a first resistance value in a first state and a second resistance value in a second state, it being possible to convert the resistance element from the first state into the second state and from the second state into the first state and the first resistance value and the second resistance value being different, a current generating device, coupled to a first terminal of the resistance element, the current generating device being designed to generate a current with a first amplitude through the resistance element when a predetermined potential is present at a second terminal of the resistance element, in order to convert the resistance element into the first state for setting the first resistance value, or to generate a current with a second amplitude through the resistance element when the predetermined potential is present at the second terminal of the resistance element, in order to convert the resistance element into the second state for setting the second resistance value, the first resistance value representing a first memory state and the second resistance value representing a second memory state.
摘要翻译： 存储元件包括具有第一状态的第一电阻值和第二状态的第二电阻值的电阻元件，可以将电阻元件从第一状态转换为第二状态并从第二状态转换为第一状态 状态，并且所述第一电阻值和所述第二电阻值不同;电流产生装置，耦合到所述电阻元件的第一端子，所述电流产生装置被设计成当预定的电流值产生具有第一振幅的电流时， 电位存在于电阻元件的第二端子处，以便将电阻元件转换成用于设定第一电阻值的第一状态，或者当预定电位存在于电阻元件时通过电阻元件产生具有第二幅度的电流 电阻元件的第二端子，以便将电阻元件转换成第二端子 状态，用于设定第二电阻值，第一电阻值表示第一存储状态，第二电阻值表示第二存储状态。
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公开(公告)号：US20070002619A1
公开(公告)日：2007-01-04
申请号：US11427339
申请日：2006-06-28
IPC分类号： G11C11/34
CPC分类号： G11C14/009 , G11C13/0004
摘要： The non-volatile memory cell has a volatile memory means for storing an item of binary information. Furthermore, the memory cell comprises only a single programmable resistance element for non-volatile saving of the stored information and a means for saving the information in the resistance element. A means for retrieving the saved information is additionally present.
摘要翻译： 非易失性存储单元具有用于存储二进制信息项的易失性存储装置。 此外，存储单元仅包括用于非易失性地存储信息的单个可编程电阻元件和用于将信息保存在电阻元件中的装置。 另外存在用于检索保存的信息的装置。
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