MEMORY ELEMENT, MEMORY READ-OUT ELEMENT AND MEMORY CELL
    1.
    发明申请
    MEMORY ELEMENT, MEMORY READ-OUT ELEMENT AND MEMORY CELL 失效
    存储器元件,存储器读出元件和存储器单元

    公开(公告)号:US20070002618A1

    公开(公告)日:2007-01-04

    申请号:US11427337

    申请日:2006-06-28

    IPC分类号: G11C11/34

    摘要: A memory element comprises a resistance element having a first resistance value in a first state and a second resistance value in a second state, it being possible to convert the resistance element from the first state into the second state and from the second state into the first state and the first resistance value and the second resistance value being different, a current generating device, coupled to a first terminal of the resistance element, the current generating device being designed to generate a current with a first amplitude through the resistance element when a predetermined potential is present at a second terminal of the resistance element, in order to convert the resistance element into the first state for setting the first resistance value, or to generate a current with a second amplitude through the resistance element when the predetermined potential is present at the second terminal of the resistance element, in order to convert the resistance element into the second state for setting the second resistance value, the first resistance value representing a first memory state and the second resistance value representing a second memory state.

    摘要翻译: 存储元件包括具有第一状态的第一电阻值和第二状态的第二电阻值的电阻元件,可以将电阻元件从第一状态转换为第二状态并从第二状态转换为第一状态 状态,并且所述第一电阻值和所述第二电阻值不同;电流产生装置,耦合到所述电阻元件的第一端子,所述电流产生装置被设计成当预定的电流值产生具有第一振幅的电流时, 电位存在于电阻元件的第二端子处,以便将电阻元件转换成用于设定第一电阻值的第一状态,或者当预定电位存在于电阻元件时通过电阻元件产生具有第二幅度的电流 电阻元件的第二端子,以便将电阻元件转换成第二端子 状态,用于设定第二电阻值,第一电阻值表示第一存储状态,第二电阻值表示第二存储状态。

    Memory element, memory read-out element and memory cell
    2.
    发明授权
    Memory element, memory read-out element and memory cell 失效
    存储元件,存储器读出元件和存储单元

    公开(公告)号:US07400526B2

    公开(公告)日:2008-07-15

    申请号:US11427337

    申请日:2006-06-28

    IPC分类号: G11C11/00

    摘要: A memory element comprises a resistance element having a first resistance value in a first state and a second resistance value in a second state, it being possible to convert the resistance element from the first state into the second state and from the second state into the first state and the first resistance value and the second resistance value being different, a current generating device, coupled to a first terminal of the resistance element, the current generating device being designed to generate a current with a first amplitude through the resistance element when a predetermined potential is present at a second terminal of the resistance element, in order to convert the resistance element into the first state for setting the first resistance value, or to generate a current with a second amplitude through the resistance element when the predetermined potential is present at the second terminal of the resistance element, in order to convert the resistance element into the second state for setting the second resistance value, the first resistance value representing a first memory state and the second resistance value representing a second memory state.

    摘要翻译: 存储元件包括具有第一状态的第一电阻值和第二状态的第二电阻值的电阻元件,可以将电阻元件从第一状态转换为第二状态并从第二状态转换成第一状态 状态,并且所述第一电阻值和所述第二电阻值不同;电流产生装置,耦合到所述电阻元件的第一端子,所述电流产生装置被设计成当预定的电流值产生具有第一振幅的电流时, 电位存在于电阻元件的第二端子处,以便将电阻元件转换成用于设定第一电阻值的第一状态,或者当预定电位存在于电阻元件时通过电阻元件产生具有第二幅度的电流 电阻元件的第二端子,以便将电阻元件转换成第二端子 状态,用于设定第二电阻值,第一电阻值表示第一存储状态,第二电阻值表示第二存储状态。

    BISTABLE MULTIVIBRATOR WITH NON-VOLATILE STATE STORAGE
    3.
    发明申请
    BISTABLE MULTIVIBRATOR WITH NON-VOLATILE STATE STORAGE 审中-公开
    具有非挥发性状态存储的双稳态多机

    公开(公告)号:US20070002619A1

    公开(公告)日:2007-01-04

    申请号:US11427339

    申请日:2006-06-28

    IPC分类号: G11C11/34

    CPC分类号: G11C14/009 G11C13/0004

    摘要: The non-volatile memory cell has a volatile memory means for storing an item of binary information. Furthermore, the memory cell comprises only a single programmable resistance element for non-volatile saving of the stored information and a means for saving the information in the resistance element. A means for retrieving the saved information is additionally present.

    摘要翻译: 非易失性存储单元具有用于存储二进制信息项的易失性存储装置。 此外,存储单元仅包括用于非易失性地存储信息的单个可编程电阻元件和用于将信息保存在电阻元件中的装置。 另外存在用于检索保存的信息的装置。

    Nonvolatile memory cell
    4.
    发明授权
    Nonvolatile memory cell 失效
    非易失性存储单元

    公开(公告)号:US07436694B2

    公开(公告)日:2008-10-14

    申请号:US11444295

    申请日:2006-05-31

    IPC分类号: G11C11/00

    摘要: Nonvolatile memory cell, having a first resistor that is electrically programmable in a nonvolatile fashion, a second resistor that is electrically programmable in a nonvolatile fashion, a first leakage current reducing element connected between the first resistor and an operating potential, and a second leakage current reducing element connected between the second resistor and the operating potential.

    摘要翻译: 具有以非易失性方式电可编程的第一电阻器的非易失性存储器单元,以非易失性方式电可编程的第二电阻器,连接在第一电阻器和工作电位之间的第一漏电流减少元件和第二漏电流 连接在第二电阻和工作电位之间的减少元件。

    Nonvolatile memory cell
    5.
    发明申请
    Nonvolatile memory cell 失效
    非易失性存储单元

    公开(公告)号:US20070047292A1

    公开(公告)日:2007-03-01

    申请号:US11444295

    申请日:2006-05-31

    IPC分类号: G11C11/00

    摘要: Nonvolatile memory cell, having a first resistor that is electrically programmable in a nonvolatile fashion, a second resistor that is electrically programmable in a nonvolatile fashion, a first leakage current reducing element connected between the first resistor and an operating potential, and a second leakage current reducing element connected between the second resistor and the operating potential.

    摘要翻译: 具有以非易失性方式电可编程的第一电阻器的非易失性存储器单元,以非易失性方式电可编程的第二电阻器,连接在第一电阻器和工作电位之间的第一漏电流减少元件和第二漏电流 连接在第二电阻和工作电位之间的减少元件。

    Use of auxiliary currents for voltage regulation
    6.
    发明授权
    Use of auxiliary currents for voltage regulation 有权
    使用辅助电流进行电压调节

    公开(公告)号:US08896148B2

    公开(公告)日:2014-11-25

    申请号:US12820259

    申请日:2010-06-22

    IPC分类号: G05F3/02 G05F1/46

    摘要: One embodiment relates to an apparatus that includes at least one circuit block and a voltage source configured to supply a first voltage to the at least one circuit block. The apparatus also includes a power delivery unit configured to be selectively activated based on a whether a quantity of power is to be delivered from the power delivery unit to the circuit block. A control unit is configured to, upon a change in power consumption of the at least one circuit block, activate the auxiliary power delivery unit to deliver the quantity of power to the circuit block. The auxiliary power delivery unit can quickly supply large currents since it does not necessarily rely on slow control loops using voltage sensing. Rather, the auxiliary power delivery unit often delivers pre-calculated current profiles to respond to the timing characteristic of the change of power consumption and of the voltage regulator.

    摘要翻译: 一个实施例涉及一种装置,其包括至少一个电路块和被配置为向至少一个电路块提供第一电压的电压源。 该装置还包括配置为基于是否将从电力传送单元传送到电路块的功率量来选择性地激活的电力输送单元。 控制单元被配置为在所述至少一个电路块的功率消耗的变化时激活辅助功率传递单元以将功率量传递到所述电路块。 辅助电力输送单元可以快速提供大电流,因为它不一定依赖于使用电压感测的慢速控制回路。 相反,辅助电力输送单元通常递送预先计算的电流曲线以响应功率变化和电压调节器的定时特性。

    Flip-flop with additional state storage in the event of turn-off
    7.
    发明授权
    Flip-flop with additional state storage in the event of turn-off 有权
    在关闭的情况下,触发器附加状态存储

    公开(公告)号:US07471580B2

    公开(公告)日:2008-12-30

    申请号:US11274048

    申请日:2005-11-15

    IPC分类号: G11C7/02

    CPC分类号: G11C11/412

    摘要: The flip-flop according to the invention serves for storing an item of logic state information and has at least one data input and at least one data output. The flip-flop comprises at least one latch stage for storing the state information if the flip-flop is switched on. Furthermore, the flip-flop according to the invention comprises at least one memory cell having a capacitance as storage element. In this case, the at least one memory cell serves for storing the state information if the flip-flop is switched off.

    摘要翻译: 根据本发明的触发器用于存储一个逻辑状态信息项,并具有至少一个数据输入和至少一个数据输出。 如果触发器被接通,触发器包括用于存储状态信息的至少一个锁存级。 此外,根据本发明的触发器包括具有作为存储元件的电容的至少一个存储单元。 在这种情况下,如果触发器被关闭,则至少一个存储单元用于存储状态信息。

    Circuit Arrangement, Electronic Mechanism, Electrical Turn out and Procedures for the Operation of One Circuit Arrangement
    8.
    发明申请
    Circuit Arrangement, Electronic Mechanism, Electrical Turn out and Procedures for the Operation of One Circuit Arrangement 有权
    电路布置,电子机构,电路结构和单电路布置操作程序

    公开(公告)号:US20080250285A1

    公开(公告)日:2008-10-09

    申请号:US12028657

    申请日:2008-02-08

    IPC分类号: G01R31/28

    摘要: A circuit arrangement may include a scan test input stage having a test input for receiving a test signal, wherein the scan test input stage can be switched in high-impedance state; a data input stage having a data input for receiving a data signal, wherein the data input stage can be switched in high-impedance state. The circuit arrangement may further include a latch coupled to at least one output of the scan test input stage and to at least one output of the data input stage; and a drive circuit, which is configured to generate a pulsed clock signal for the data input stage and a signal for driving the scan test input stage.

    摘要翻译: 电路装置可以包括具有用于接收测试信号的测试输入的扫描测试输入级,其中扫描测试输入级可以以高阻抗状态切换; 数据输入级具有用于接收数据信号的数据输入,其中数据输入级可以以高阻抗状态切换。 电路装置还可以包括耦合到扫描测试输入级的至少一个输出端和数据输入级的至少一个输出端的锁存器; 以及驱动电路,其被配置为产生用于数据输入级的脉冲时钟信号和用于驱动扫描测试输入级的信号。

    Circuit arrangement, electronic mechanism, electrical turn out and procedures for the operation of one circuit arrangement
    10.
    发明授权
    Circuit arrangement, electronic mechanism, electrical turn out and procedures for the operation of one circuit arrangement 有权
    电路布置,电子机构,电气开关和一个电路布置操作的程序

    公开(公告)号:US07958418B2

    公开(公告)日:2011-06-07

    申请号:US12028657

    申请日:2008-02-08

    IPC分类号: G01R31/28

    摘要: A circuit arrangement may include a scan test input stage having a test input for receiving a test signal, wherein the scan test input stage can be switched in high-impedance state; a data input stage having a data input for receiving a data signal, wherein the data input stage can be switched in high-impedance state. The circuit arrangement may further include a latch coupled to at least one output of the scan test input stage and to at least one output of the data input stage; and a drive circuit, which is configured to generate a pulsed clock signal for the data input stage and a signal for driving the scan test input stage.

    摘要翻译: 电路装置可以包括具有用于接收测试信号的测试输入的扫描测试输入级,其中扫描测试输入级可以以高阻抗状态切换; 数据输入级具有用于接收数据信号的数据输入,其中数据输入级可以以高阻抗状态切换。 电路装置还可以包括耦合到扫描测试输入级的至少一个输出端和数据输入级的至少一个输出端的锁存器; 以及驱动电路,其被配置为产生用于数据输入级的脉冲时钟信号和用于驱动扫描测试输入级的信号。