公开(公告)号：US20220015193A1

公开(公告)日：2022-01-13

申请号：US17370347

申请日：2021-07-08

申请人： TOKYO ELECTRON LIMITED

发明人： Shigeru KASAI ,  Hiroyuki NAKAYAMA ,  Yutaka AKAIKE ,  Hiroaki KOMIYA ,  Yoshiyasu KATO

IPC分类号： H05B1/02 ,  H05B3/22 ,  G01R31/28

摘要： A method for adjusting a temperature of a substrate support is provided. In an apparatus for inspecting a target device, a substrate placement surface of the substrate support is divided into multiple regions and a heater is disposed in each of the multiple regions. The method comprises controlling the heater in a main region corresponding to the target device such that a temperature of the main region becomes a set temperature, and controlling the heater in a sub-region adjacent to the main region. When overshoot has not occurred in the temperature of the main region, the heater in the sub-region is controlled such that a temperature difference between the main region and the sub-region becomes a predetermined value, and when overshoot has occurred, the heater of the sub-region is controlled such that a difference between the set temperature and the temperature in the sub-region becomes the predetermined value.

公开(公告)号：US20210265183A1

公开(公告)日：2021-08-26

申请号：US17177687

申请日：2021-02-17

申请人： Tokyo Electron Limited

发明人： Shigeru KASAI ,  Yutaka AKAIKE ,  Yoshiyasu KATO ,  Hiroyuki NAKAYAMA ,  Hiroaki KOMIYA

IPC分类号： H01L21/67 ,  B32B7/12 ,  B32B15/01 ,  H05B3/20

摘要： A dummy wafer includes a planar heater and a pair of plate-shaped members formed of an aluminum alloy, aluminum, or silicon carbide, wherein the planar heater is sandwiched by the plate-shaped members.