PLASMA DIAGNOSIS SYSTEM AND PLASMA DIAGNOSIS METHOD

    公开(公告)号:US20240021420A1

    公开(公告)日:2024-01-18

    申请号:US18251520

    申请日:2020-11-03

    IPC分类号: H01J37/32

    摘要: A plasma diagnosis system includes a first planar substrate on which at least a part of plasma to be diagnosed generated in a plasma generation device is deposited; a second planar substrate disposed below the first planar substrate; a sensor unit which is disposed in a cavity formed in the first planar substrate to measure a plasma parameter of the generated plasma and is enclosed by an insulator to be electrically insulated from the firs planar substrate; and an electronic device which is located between the first planar substrate and the second planar substrate, is shielded from the first planar substrate and the second planar substrate by means of ground plates, respectively, and measures and processes in real time a characteristic value of the plasma using an electric signal generated from the sensor unit by the plasma parameter.

    RAISING-AND-LOWERING MECHANISM, STAGE AND PLASMA PROCESSING APPARATUS

    公开(公告)号:US20190244791A1

    公开(公告)日:2019-08-08

    申请号:US16263114

    申请日:2019-01-31

    发明人: Jun Young CHUNG

    摘要: A raising-and-lowering mechanism for a processing target is provided. The raising-and-lowering mechanism includes: a pin insertion hole that is provided in a stage in an up-and-down direction, the processing target that is to be processed in a processing chamber being placed on the stage; a lifter pin that is raised and lowered in the up-and-down direction; a lubrication unit that is provided at a predetermined height between the pin insertion hole and the lifter pin and supplies a lubricant to the lifter pin; a drive unit that drives the lifter pin in the up-and-down direction; and a heat-transfer gas supplying unit that includes a heat-transfer gas supplying path that penetrates through to the pin insertion hole at a position higher than the lubrication unit and supplies a heat-transfer gas to the pin insertion hole.

    Method of producing processing condition of plasma processing apparatus, and plasma processing apparatus

    公开(公告)号:US09870901B2

    公开(公告)日:2018-01-16

    申请号:US15146018

    申请日:2016-05-04

    发明人: Takashi Dokan

    IPC分类号: H01J37/32 H01L21/3065

    摘要: Disclosed is a method of producing a processing condition of a plasma processing apparatus. The method includes producing a plurality of processing conditions having different processing parameters, which are applied to an intermediate process performed between an ignition process that ignites plasma of a processing gas using a high frequency wave and a processing process that processes a workpiece by the plasma; sequentially performing the ignition process, the intermediate process applied with each of the processing conditions, and the processing process; measuring, when the intermediated process is changed to the processing process, a power of a reflected wave of the high frequency wave during the processing process in association with each of the processing conditions; and selecting, among the plurality of processing conditions, a processing condition in which the power of the reflected wave of the high frequency wave is minimized.

    Test apparatus and plasma processing apparatus

    公开(公告)号:US09673027B2

    公开(公告)日:2017-06-06

    申请号:US14161538

    申请日:2014-01-22

    IPC分类号: H01J37/32 H01L21/66

    摘要: A test apparatus for efficiently and accurately testing a high frequency voltage dependency of an impedance of a test object without damaging the test object. The test apparatus includes a high frequency power source unit, a reference waveform generator, a matching device, an oscilloscope, a control panel, and a main control unit. The test apparatus may boost a high frequency pulse output at a relatively low power from the high frequency power source unit to a voltage required for a high frequency withstand voltage test to be applied to a test object in a state where impedance matching is performed between the high frequency power source unit and the test by the matching device, that is, under a tuned state. Whether the waveform of the voltage applied to the test object is a defined waveform may be concisely monitored and observed by the oscilloscope.

    Determining a malfunctioning device in a plasma system

    公开(公告)号:US09620337B2

    公开(公告)日:2017-04-11

    申请号:US14184631

    申请日:2014-02-19

    IPC分类号: H01J37/32

    摘要: Systems and methods for determining a malfunctioning device in a plasma system, are described. One of the methods includes receiving an indication whether plasma is generated within a plasma chamber of the plasma system. The plasma system includes a processing portion and a power delivery portion. The method further includes determining whether the plasma system operates within constraints in response to receiving the indication that the plasma is generated, determining a value of a variable at an output of the power delivery portion when the processing portion is decoupled from the power delivery portion, and comparing the determined value with a pre-recorded value of the variable. The method includes determining whether the determined value is outside a range of the pre-recorded value and determining that the malfunctioning device within the power delivery portion upon determining that the determined value is outside the range of the pre-recorded value.

    PLASMA PROCESSING DETECTION INDICATOR
    9.
    发明申请
    PLASMA PROCESSING DETECTION INDICATOR 审中-公开
    等离子体加工检测指示器

    公开(公告)号:US20160349222A1

    公开(公告)日:2016-12-01

    申请号:US15117601

    申请日:2016-02-12

    发明人: Marimo MORI

    IPC分类号: G01N31/22 G01D7/00 H01J37/32

    摘要: This invention provides a plasma treatment detection indicator that uses a fibrous base material or a synthetic resin base material comprising a coloring pigment as a base material and in which fine fiber pieces or coloring pigment is prevented from being generated in a powder form from the base material in plasma treatment. More specifically, this invention provides a plasma treatment detection indicator comprising a base material and at least a color-changing layer that changes color in a plasma treatment atmosphere, the color-changing layer being disposed above part or all of a surface of the base material, (1) the base material being a fibrous base material or a synthetic resin base material comprising a coloring pigment, and (2) a resin-based or inorganic transparent cover layer that covers all of the surface of the base material being disposed between the base material and the color-changing layer.

    摘要翻译: 本发明提供一种等离子体处理检测指示器,其使用纤维基材或合成树脂基材,其包含着色颜料作为基材,并且其中防止从基材产生粉末状的细纤维片或着色颜料 在等离子体处理。 更具体地,本发明提供了一种等离子体处理检测指示器,其包括基材和至少一种在等离子体处理气氛中改变颜色的变色层,所述变色层设置在基材的表面的一部分或全部上方 ,(1)作为纤维基材的基材或包含着色颜料的合成树脂基材,(2)树脂系或无机透明覆盖层,其覆盖基材的全部表面, 基材和变色层。

    Arrangement for plasma processing system control based on RF voltage
    10.
    发明授权
    Arrangement for plasma processing system control based on RF voltage 有权
    基于射频电压等离子体处理系统控制的布置

    公开(公告)号:US09455126B2

    公开(公告)日:2016-09-27

    申请号:US14808846

    申请日:2015-07-24

    摘要: An arrangement for controlling a plasma processing system is provided. The arrangement includes an RF sensing mechanism for obtaining an RF voltage signal. The arrangement also includes a voltage probe coupled to the RF sensing mechanism to facilitate acquisition of the signal while reducing perturbation of RF power driving a plasma in the plasma processing system. The arrangement further includes a signal processing arrangement configured for receiving the signal, split the voltage signals into a plurality of channels, convert the signals into a plurality of direct current (DC) signals, convert the DC signals into digital signals and process the digital signal in a digital domain to generate a transfer function output. The arrangement moreover includes an ESC power supply subsystem configured to receive the transfer function output as a feedback signal to control the plasma processing system.

    摘要翻译: 提供了一种用于控制等离子体处理系统的装置。 该装置包括用于获得RF电压信号的RF感测机构。 该装置还包括耦合到RF感测机构的电压探针,以便于获取信号,同时减少在等离子体处理系统中驱动等离子体的RF功率的扰动。 该装置还包括配置用于接收信号的信号处理装置,将电压信号分成多个通道,将信号转换成多个直流(DC)信号,将DC信号转换为数字信号并处理数字信号 在数字域中产生一个传递函数输出。 该装置还包括配置成接收传递函数输出作为反馈信号以控制等离子体处理系统的ESC电源子系统。