-
公开(公告)号:US20240186124A1
公开(公告)日:2024-06-06
申请号:US18435923
申请日:2024-02-07
申请人: iSenseCloud, Inc.
IPC分类号: H01J37/32 , G01J3/02 , G01J3/18 , G01K1/14 , G01K11/3206 , G01N29/14 , G01N29/24 , G02B6/02 , G02B6/42 , H01L21/687 , H01S5/06 , H01S5/068 , H01S5/40
CPC分类号: H01J37/32917 , G01J3/0208 , G01K1/14 , G01K11/3206 , G01N29/14 , G01N29/2418 , G01N29/2462 , G02B6/0208 , G02B6/4204 , G01J3/18 , H01J2237/24585 , H01L21/68742 , H01S5/0617 , H01S5/06804 , H01S5/06808 , H01S5/4087
摘要: An apparatuses relating generally to a test wafer, processing chambers, and method relating generally to monitoring or calibrating a processing chamber, are described. In one such an apparatus for a test wafer, there is a platform. An optical fiber with Fiber Bragg Grating sensors is located over the platform. A layer of material is located over the platform and over the optical fiber.
-
公开(公告)号:US20240021420A1
公开(公告)日:2024-01-18
申请号:US18251520
申请日:2020-11-03
发明人: Gi Chung KWON , Bum Su ON , Yeon Su PARK
IPC分类号: H01J37/32
CPC分类号: H01J37/32917 , H01J2237/24564
摘要: A plasma diagnosis system includes a first planar substrate on which at least a part of plasma to be diagnosed generated in a plasma generation device is deposited; a second planar substrate disposed below the first planar substrate; a sensor unit which is disposed in a cavity formed in the first planar substrate to measure a plasma parameter of the generated plasma and is enclosed by an insulator to be electrically insulated from the firs planar substrate; and an electronic device which is located between the first planar substrate and the second planar substrate, is shielded from the first planar substrate and the second planar substrate by means of ground plates, respectively, and measures and processes in real time a characteristic value of the plasma using an electric signal generated from the sensor unit by the plasma parameter.
-
公开(公告)号:US20190244791A1
公开(公告)日:2019-08-08
申请号:US16263114
申请日:2019-01-31
发明人: Jun Young CHUNG
IPC分类号: H01J37/32 , H01L21/02 , H01L21/311 , H01L21/683
CPC分类号: H01J37/32449 , H01J37/32917 , H01J2237/3347 , H01L21/02274 , H01L21/31116 , H01L21/6833
摘要: A raising-and-lowering mechanism for a processing target is provided. The raising-and-lowering mechanism includes: a pin insertion hole that is provided in a stage in an up-and-down direction, the processing target that is to be processed in a processing chamber being placed on the stage; a lifter pin that is raised and lowered in the up-and-down direction; a lubrication unit that is provided at a predetermined height between the pin insertion hole and the lifter pin and supplies a lubricant to the lifter pin; a drive unit that drives the lifter pin in the up-and-down direction; and a heat-transfer gas supplying unit that includes a heat-transfer gas supplying path that penetrates through to the pin insertion hole at a position higher than the lubrication unit and supplies a heat-transfer gas to the pin insertion hole.
-
公开(公告)号:US20180203114A1
公开(公告)日:2018-07-19
申请号:US15919054
申请日:2018-03-12
发明人: Michael Weber-Grabau
CPC分类号: G01S17/026 , A01M1/026 , A01M1/06 , A01M1/08 , G01B11/08 , G01V8/20 , H01J37/32917 , H01J37/32935
摘要: Object detection systems are provided herein. An example system includes an enclosure formed by a sidewall to define an interaction volume, at least one light source for illuminating the interaction volume with a light, at least one light sensor that senses disturbances in light intensity due to scattering, reflection, or absorption of the light by objects within the interaction volume, and a controller that is configured to detect an object or object behavior within interaction volume based on the disturbances in the light intensity.
-
公开(公告)号:US09870901B2
公开(公告)日:2018-01-16
申请号:US15146018
申请日:2016-05-04
发明人: Takashi Dokan
IPC分类号: H01J37/32 , H01L21/3065
CPC分类号: H01J37/32917 , H01J37/32192 , H01J37/32311 , H01J37/32926 , H01L21/3065
摘要: Disclosed is a method of producing a processing condition of a plasma processing apparatus. The method includes producing a plurality of processing conditions having different processing parameters, which are applied to an intermediate process performed between an ignition process that ignites plasma of a processing gas using a high frequency wave and a processing process that processes a workpiece by the plasma; sequentially performing the ignition process, the intermediate process applied with each of the processing conditions, and the processing process; measuring, when the intermediated process is changed to the processing process, a power of a reflected wave of the high frequency wave during the processing process in association with each of the processing conditions; and selecting, among the plurality of processing conditions, a processing condition in which the power of the reflected wave of the high frequency wave is minimized.
-
公开(公告)号:US09685320B2
公开(公告)日:2017-06-20
申请号:US14335785
申请日:2014-07-18
发明人: Hu Kang , Wanki Kim , Adrien LaVoie
IPC分类号: H01L21/02 , H01J37/32 , C23C16/40 , C23C16/455
CPC分类号: H01L21/02274 , C23C16/402 , C23C16/45542 , H01J37/32091 , H01J37/32137 , H01J37/32724 , H01J37/32917 , H01L21/02164 , H01L21/022 , H01L21/02211 , H01L21/02219 , H01L21/0228 , H01L21/31111 , H01L21/76831 , H01L21/76898 , H01L27/11582
摘要: The embodiments herein focus on plasma enhanced atomic layer deposition (PEALD) processes. Conventional PEALD techniques result in films having high quality at the bottom and top of a feature, but low quality on the sidewalls. The disclosed embodiments achieve more uniform film quality as evidenced by more uniform wet etch rates and electrical properties throughout the film. The disclosed embodiments may use one or more of a relatively high deposition temperature, a relatively high RF power for generating the plasma, and/or relatively long RF plasma exposure duration during each cycle of the PEALD reaction.
-
公开(公告)号:US09673027B2
公开(公告)日:2017-06-06
申请号:US14161538
申请日:2014-01-22
发明人: Takashi Yamamoto , Junichi Shimada
CPC分类号: H01J37/32917 , H01J37/32082 , H01J37/32174 , H01L22/14 , H01L22/26
摘要: A test apparatus for efficiently and accurately testing a high frequency voltage dependency of an impedance of a test object without damaging the test object. The test apparatus includes a high frequency power source unit, a reference waveform generator, a matching device, an oscilloscope, a control panel, and a main control unit. The test apparatus may boost a high frequency pulse output at a relatively low power from the high frequency power source unit to a voltage required for a high frequency withstand voltage test to be applied to a test object in a state where impedance matching is performed between the high frequency power source unit and the test by the matching device, that is, under a tuned state. Whether the waveform of the voltage applied to the test object is a defined waveform may be concisely monitored and observed by the oscilloscope.
-
公开(公告)号:US09620337B2
公开(公告)日:2017-04-11
申请号:US14184631
申请日:2014-02-19
IPC分类号: H01J37/32
CPC分类号: H01J37/32926 , G01R31/40 , H01J37/32917 , H01J37/3299
摘要: Systems and methods for determining a malfunctioning device in a plasma system, are described. One of the methods includes receiving an indication whether plasma is generated within a plasma chamber of the plasma system. The plasma system includes a processing portion and a power delivery portion. The method further includes determining whether the plasma system operates within constraints in response to receiving the indication that the plasma is generated, determining a value of a variable at an output of the power delivery portion when the processing portion is decoupled from the power delivery portion, and comparing the determined value with a pre-recorded value of the variable. The method includes determining whether the determined value is outside a range of the pre-recorded value and determining that the malfunctioning device within the power delivery portion upon determining that the determined value is outside the range of the pre-recorded value.
-
公开(公告)号:US20160349222A1
公开(公告)日:2016-12-01
申请号:US15117601
申请日:2016-02-12
发明人: Marimo MORI
CPC分类号: G01N31/22 , G01D7/005 , H01J37/32009 , H01J37/3244 , H01J37/32917 , H01J37/32935 , H01J37/32972 , H01J2237/334
摘要: This invention provides a plasma treatment detection indicator that uses a fibrous base material or a synthetic resin base material comprising a coloring pigment as a base material and in which fine fiber pieces or coloring pigment is prevented from being generated in a powder form from the base material in plasma treatment. More specifically, this invention provides a plasma treatment detection indicator comprising a base material and at least a color-changing layer that changes color in a plasma treatment atmosphere, the color-changing layer being disposed above part or all of a surface of the base material, (1) the base material being a fibrous base material or a synthetic resin base material comprising a coloring pigment, and (2) a resin-based or inorganic transparent cover layer that covers all of the surface of the base material being disposed between the base material and the color-changing layer.
摘要翻译: 本发明提供一种等离子体处理检测指示器,其使用纤维基材或合成树脂基材,其包含着色颜料作为基材,并且其中防止从基材产生粉末状的细纤维片或着色颜料 在等离子体处理。 更具体地,本发明提供了一种等离子体处理检测指示器,其包括基材和至少一种在等离子体处理气氛中改变颜色的变色层,所述变色层设置在基材的表面的一部分或全部上方 ,(1)作为纤维基材的基材或包含着色颜料的合成树脂基材,(2)树脂系或无机透明覆盖层,其覆盖基材的全部表面, 基材和变色层。
-
10.
公开(公告)号:US09455126B2
公开(公告)日:2016-09-27
申请号:US14808846
申请日:2015-07-24
IPC分类号: H01J37/32 , G05B19/418 , G05B15/02
CPC分类号: H01J37/32137 , G05B15/02 , G05B19/418 , G05B2219/45031 , H01J37/32082 , H01J37/32174 , H01J37/32183 , H01J37/32917 , H01J37/32926 , H01J37/3299
摘要: An arrangement for controlling a plasma processing system is provided. The arrangement includes an RF sensing mechanism for obtaining an RF voltage signal. The arrangement also includes a voltage probe coupled to the RF sensing mechanism to facilitate acquisition of the signal while reducing perturbation of RF power driving a plasma in the plasma processing system. The arrangement further includes a signal processing arrangement configured for receiving the signal, split the voltage signals into a plurality of channels, convert the signals into a plurality of direct current (DC) signals, convert the DC signals into digital signals and process the digital signal in a digital domain to generate a transfer function output. The arrangement moreover includes an ESC power supply subsystem configured to receive the transfer function output as a feedback signal to control the plasma processing system.
摘要翻译: 提供了一种用于控制等离子体处理系统的装置。 该装置包括用于获得RF电压信号的RF感测机构。 该装置还包括耦合到RF感测机构的电压探针,以便于获取信号,同时减少在等离子体处理系统中驱动等离子体的RF功率的扰动。 该装置还包括配置用于接收信号的信号处理装置,将电压信号分成多个通道,将信号转换成多个直流(DC)信号,将DC信号转换为数字信号并处理数字信号 在数字域中产生一个传递函数输出。 该装置还包括配置成接收传递函数输出作为反馈信号以控制等离子体处理系统的ESC电源子系统。
-
-
-
-
-
-
-
-
-