公开(公告)号：US20180374682A1

公开(公告)日：2018-12-27

申请号：US16012852

申请日：2018-06-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takehiro TANIKAWA ,  Shinji KAWADA ,  Takayuki SEMOTO

IPC: H01J37/32

Abstract: A plasma processing method includes a gas supply step and a film forming step. In the gas supply step, a gaseous mixture containing a compound gas containing a silicon element and a halogen element, an oxygen-containing gas, and an additional gas containing the same halogen element as the halogen element contained in the compound gas and no silicon element is supplied into a chamber. In the film forming step, a protective film is formed on a surface of a member in the chamber by plasma of the gaseous mixture supplied into the chamber.

公开(公告)号：US20160268101A1

公开(公告)日：2016-09-15

申请号：US15064698

申请日：2016-03-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazushi KANEKO ,  Hideo KATO ,  Kazunori FUNAZAKI ,  Yuji OTSUKA ,  Shinji KAWADA

IPC: H01J37/32

CPC classification number: H01J37/32311 ,  H01J37/32229 ,  H01J37/32917

Abstract: A microwave automatic matcher includes a movable body, a driving unit, a matching control unit, a reflection coefficient measuring unit, and a setting unit. The matching control unit consecutively moves the movable body from a start position in one direction by a distance of a difference between the start position and the target position in a matching operation carried out for the plasma process and then variably controls the position of the movable body until the measurement of the reflection coefficient obtained by the reflection coefficient measuring unit falls within the first neighboring range by monitoring the measurement of the reflection coefficient.

Abstract translation: 微波自动匹配器包括可移动体，驱动单元，匹配控制单元，反射系数测量单元和设置单元。 匹配控制单元在对于等离子体处理进行的匹配操作中，使可移动体从一个方向的起始位置连续地移动开始位置和目标位置之间的差的距离，然后可变地控制可移动体的位置 直到通过监视反射系数的测量，由反射系数测量单元获得的反射系数的测量落入第一相邻范围内。

公开(公告)号：US20140170842A1

公开(公告)日：2014-06-19

申请号：US14109231

申请日：2013-12-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Motoki NORO ,  Tai-Chuan LIN ,  Shinji KAWADA

IPC: H01L21/28 ,  H01L21/3213

CPC classification number: H01L21/32137 ,  H01J37/32082 ,  H01J37/32192 ,  H01L29/66545 ,  H01L29/66795

Abstract: Disclosed is a method of forming a dummy gate in manufacturing a field effect transistor. The method includes a first process of exposing a workpiece having a polycrystalline silicon layer to plasma of HBr gas, and a second process of further exposing the workpiece to the plasma of HBr gas after the first process. The first process includes etching the polycrystalline silicon layer to form a dummy semiconductor part having a pair of side surfaces from the polycrystalline silicon layer, and forming a protection film based on a by-product of etching on the pair of side surfaces in such a manner that the thickness of the protection film becomes smaller toward a lower end of the dummy semiconductor part.

Abstract translation: 公开了在制造场效应晶体管时形成伪栅极的方法。 该方法包括将具有多晶硅层的工件暴露于HBr气体的等离子体的第一工艺，以及在第一工序之后将工件进一步暴露于HBr气体的等离子体的第二工序。 第一工艺包括蚀刻多晶硅层以形成具有来自多晶硅层的一对侧表面的虚设半导体部件，并且以这种方式形成基于一对侧表面上的蚀刻副产物的保护膜 保护膜的厚度朝着虚拟半导体部件的下端变小。