公开(公告)号：US20230268202A1

公开(公告)日：2023-08-24

申请号：US18106857

申请日：2023-02-07

Applicant: Tokyo Electron Limited

Inventor： Keita HIRASE ,  Koji TANAKA ,  Yukiyoshi SAITO ,  Keisuke SASAKI

IPC: H01L21/67 ,  H01L21/311 ,  H01L21/677

CPC classification number: H01L21/67086 ,  H01L21/31111 ,  H01L21/67754 ,  H01L21/67757

Abstract: A substrate processing system includes: a carry-in/out section in which a cassette accommodating a plurality of substrates is carried in/out; a batch processing section in which a wafer lot including the plurality of substrates is collectively processed; a single-wafer processing section in which the substrates of the wafer lot is processed one by one; and an interface section that delivers the substrates between the batch processing section and the single-wafer processing section. The batch processing section includes: a processing bath in which the wafer lot is immersed and processed; and a first transfer device that transfers the wafer lot to the processing bath. The interface section includes: an immersion bath disposed outside a movement range of the first transfer device and that immerses the wafer lot; and a second transfer device that holds and transfers the wafer lot between the first transfer device and the immersion bath.

公开(公告)号：US20160181133A1

公开(公告)日：2016-06-23

申请号：US14974810

申请日：2015-12-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Keisuke YOSHIDA ,  Yuzo OHISHI ,  Keisuke SASAKI ,  Shoichi TERADA

IPC: H01L21/67 ,  H01L21/26 ,  H01L21/673

Abstract: A substrate processing apparatus includes a hot plate which supports and heats a substrate, a light source which emits etching energy beam such that the etching energy beam etches the substrate held by the hot plate, a window device which is positioned between the light source and the hot plate and transmits the etching energy beam emitted by the light source toward the substrate, and an adjusting device which adjusts emission amounts of the etching energy beam from portions of the window device toward the substrate such that the adjusting device reduces difference in etching amounts of portions of the substrate.

Abstract translation: 基板处理装置包括支撑和加热基板的热板，发射蚀刻能量束的光源，使得蚀刻能量线蚀刻由热板保持的基板，位于光源和光源之间的窗口装置 将由光源发出的蚀刻能量束朝向基板传递，调整装置调整从窗装置的部分向基板的蚀刻能量束的发射量，使得调整装置减小蚀刻能量束的蚀刻量 基片的一部分。