公开(公告)号：US20180218924A1

公开(公告)日：2018-08-02

申请号：US15883481

申请日：2018-01-30

Applicant: Tokyo Electron Limited

Inventor： Koji TANAKA ,  Toshiyuki SHIOKAWA ,  Koji YAMASHITA ,  Hiroyuki MASUTOMI ,  Hitoshi KOSUGI ,  Takao INADA ,  Takashi IKEDA ,  Tsukasa HIRAYAMA

IPC: H01L21/67 ,  H01L21/673 ,  H01L21/677

CPC classification number: H01L21/67086 ,  H01L21/67034 ,  H01L21/67057 ,  H01L21/67309 ,  H01L21/67313 ,  H01L21/67742 ,  H01L21/67751 ,  H01L21/67757

Abstract: A substrate liquid treatment apparatus includes an inner tank configured to store a treatment liquid and having an upper opening, an outer tank disposed outside the inner tank, and a lid movable between a close position for closing the upper opening of the inner tank and an open position for opening the upper opening of the inner tank. The lid includes a main portion that covers the upper opening of the inner tank when the lid is positioned at the close position, and a splash shielding portion connected to the main portion. When the lid is positioned at the close position, the splash shielding portion extends from a position higher than an upper end of a side wall of the inner tank adjacent to the splash shielding portion to a position which is lower than the upper end of the side wall and which is on the outer tank side of the side wall.

公开(公告)号：US20150380280A1

公开(公告)日：2015-12-31

申请号：US14850139

申请日：2015-09-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Michitaka AMIYA ,  Takami SATOH ,  Kazuyoshi ESHIMA ,  Akihiro NAKAMURA ,  Koji TANAKA ,  Kazuki KOSAI

IPC: H01L21/67 ,  B01D19/02 ,  G05D7/01 ,  B01F15/02 ,  B01F15/00 ,  B01F3/08 ,  B08B3/08

CPC classification number: H01L21/67051 ,  B01D19/02 ,  B01F3/0865 ,  B01F15/00357 ,  B01F15/026 ,  B01F2215/0077 ,  B08B3/08 ,  G05D7/01 ,  G05D11/138 ,  H01L21/67017

Abstract: A flow-rate regulator device for controlling a flow rate of a liquid includes a first flow-rate regulator component positioned on an upstream side of a liquid line, and a second flow-rate regulator component positioned on a downstream side of the liquid line and connected in series to the first flow-rate regulator component. The first flow-rate regulator component adjusts a degree of opening such that a flow rate of liquid flowing through the liquid line is set a specified number of times greater than a target flow rate when the second flow-rate regulator component has a full opening, and the second flow-rate regulator component adjusts a degree of opening such that the flow rate of the liquid flowing through the liquid line is to be at the target flow rate when the first flow-rate regulator component is adjusted to have the degree of opening.

Abstract translation: 用于控制液体流速的流量调节装置包括位于液体管线上游侧的第一流量调节部件和位于液体管线下游侧的第二流量调节部件， 与第一流量调节器组件串联连接。 第一流量调节器部件调节打开程度，使得当第二流量调节器部件具有完全打开时，流过液体管线的液体的流量被设定为大于目标流量的指定次数， 并且第二流量调节器部件调节开度，使得当将第一流量调节器部件调节为具有开度时，流过液体管线的液体的流量将处于目标流量 。

公开(公告)号：US20230282493A1

公开(公告)日：2023-09-07

申请号：US18115738

申请日：2023-02-28

Applicant: Tokyo Electron Limited

Inventor： Keita HIRASE ,  Yukiyoshi SAITO ,  Akihiro TERAMOTO ,  Koji TANAKA ,  Shota TAKEI ,  Masataka GOSHO ,  Kazuaki KITAMURA ,  Shinichi IKEDA ,  Shunsuke KURIZAKI ,  Yuji KIMURA

IPC: H01L21/67 ,  H01L21/311 ,  H01L21/677 ,  H01L21/687

CPC classification number: H01L21/67086 ,  H01L21/31111 ,  H01L21/6708 ,  H01L21/67718 ,  H01L21/6875

Abstract: A substrate processing system includes: a carry-in/out section in which a cassette accommodating a plurality of substrates is carried in/out; a batch processing section in which a wafer lot including the plurality of substrates is collectively processed in a state where each of the plurality of substrates stand upright; a single-wafer processing section in which the plurality of substrates included in the wafer lot are processed one by one in a horizontal state; and an interface section that delivers the plurality of substrates from the batch processing section to the single-wafer processing section. The interface section includes: a standby table that horizontally holds a substrate in a state of being in contact with pure water; and a transfer mechanism that delivers the substrate from the batch processing section to the standby table.

公开(公告)号：US20230268202A1

公开(公告)日：2023-08-24

申请号：US18106857

申请日：2023-02-07

Applicant: Tokyo Electron Limited

Inventor： Keita HIRASE ,  Koji TANAKA ,  Yukiyoshi SAITO ,  Keisuke SASAKI

IPC: H01L21/67 ,  H01L21/311 ,  H01L21/677

CPC classification number: H01L21/67086 ,  H01L21/31111 ,  H01L21/67754 ,  H01L21/67757

Abstract: A substrate processing system includes: a carry-in/out section in which a cassette accommodating a plurality of substrates is carried in/out; a batch processing section in which a wafer lot including the plurality of substrates is collectively processed; a single-wafer processing section in which the substrates of the wafer lot is processed one by one; and an interface section that delivers the substrates between the batch processing section and the single-wafer processing section. The batch processing section includes: a processing bath in which the wafer lot is immersed and processed; and a first transfer device that transfers the wafer lot to the processing bath. The interface section includes: an immersion bath disposed outside a movement range of the first transfer device and that immerses the wafer lot; and a second transfer device that holds and transfers the wafer lot between the first transfer device and the immersion bath.

公开(公告)号：US20220105535A1

公开(公告)日：2022-04-07

申请号：US17489045

申请日：2021-09-29

Applicant: Tokyo Electron Limited

Inventor： Kotaro TSURUSAKI ,  Koji YAMASHITA ,  Yusuke YAMAMOTO ,  Koji TANAKA ,  Kouzou KANAGAWA

IPC: B05C3/109 ,  B05D1/20 ,  B05C11/00

Abstract: A substrate processing apparatus includes a processing tank, a holder, an organic solvent supply, a drainage port, a gas supply, and an exhaust port. The processing tank stores an aqueous layer. The holder holds a substrate. The organic solvent supply supplies an organic solvent onto the aqueous layer to form a liquid layer of the organic solvent. The drainage port discharges the aqueous layer from a bottom wall of the processing tank and causes the liquid layer of the organic solvent to descend from above the substrate to below the substrate. The gas supply supplies a gas of a water repellent agent to the liquid layer from above the processing tank while the liquid layer descends. The exhaust port is exposed on a side wall of the processing tank by the descending of the liquid layer and discharges the gas of the water repellent gas.