公开(公告)号：US20160079081A1

公开(公告)日：2016-03-17

申请号：US14851091

申请日：2015-09-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi TODA ,  Kenshirou ASAHI ,  Hiroyuki TAKAHASHI ,  Kimihiko DEMICHI

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/30604 ,  H01L21/30621 ,  H01L21/311 ,  H01L21/32135

Abstract: There is provided an etching method, including: disposing a target substrate within a chamber, the target substrate having a first silicon oxide film formed on a surface of the target substrate and a second silicon oxide film formed adjacent to the first silicon oxide film, the first silicon oxide film being formed by an atomic layer deposition method and the second silicon oxide film being formed by a method other than the atomic layer deposition method; and selectively etching the first silicon oxide film with respect to the second silicon oxide film by supplying one selected from the group consisting of HF gas and alcohol gas; HF gas and water vapor; HF gas, F2 gas, and alcohol gas; HF gas, F2 gas, and water vapor, into the chamber.

Abstract translation: 提供了一种蚀刻方法，包括：将目标衬底设置在腔室内，目标衬底具有形成在目标衬底的表面上的第一氧化硅膜和与第一氧化硅膜相邻形成的第二氧化硅膜， 第一氧化硅膜通过原子层沉积法形成，第二氧化硅膜通过除原子层沉积法之外的方法形成; 并通过供给选自HF气体和醇气体的一种来选择性地蚀刻相对于第二氧化硅膜的第一氧化硅膜; HF气体和水蒸汽; HF气体，F2气体和醇气体; HF气体，F2气体和水蒸气进入腔室。

公开(公告)号：US20160020115A1

公开(公告)日：2016-01-21

申请号：US14795363

申请日：2015-07-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kimihiko DEMICHI ,  Kenshirou ASAHI ,  Hiroyuki TAKAHASHI

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01L21/0206

Abstract: An etching method includes disposing a target substrate within a chamber. The target substrate has a first silicon oxide film formed on a surface of the target substrate by a chemical vapor deposition method or an atomic layer deposition method, a second silicon oxide film that includes a thermally-oxidized film and a silicon nitride film. The second silicon oxide film and the silicon nitride are formed adjacent to the first silicon oxide film. The etching method further includes supplying an HF gas and an alcohol gas or water vapor into the chamber to selectively etch the first silicon oxide film with respect to the second silicon oxide film and the silicon nitride film.

Abstract translation: 蚀刻方法包括将目标衬底设置在腔室内。 目标衬底具有通过化学气相沉积法或原子层沉积法形成在目标衬底的表面上的第一氧化硅膜，包括热氧化膜和氮化硅膜的第二氧化硅膜。 第二氧化硅膜和氮化硅与第一氧化硅膜相邻地形成。 蚀刻方法还包括将HF气体和醇气体或水蒸汽供应到室中以相对于第二氧化硅膜和氮化硅膜选择性地蚀刻第一氧化硅膜。