公开(公告)号：US09875881B2

公开(公告)日：2018-01-23

申请号：US14183723

申请日：2014-02-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kohichi Nagami ,  Norikazu Yamada ,  Tadashi Gondai ,  Kouichi Yoshida

IPC: H01L21/00 ,  C23C16/00 ,  H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32706 ,  H01J37/32944

Abstract: At a first timing after mounting a semiconductor wafer W on an electrostatic chuck 38, a susceptor 12 is switched from an electrically grounded state into a floated state. From a second timing after the first timing, a second high frequency power HF for plasma generation is applied to the susceptor 12, and a processing gas is excited into plasma in a chamber 10. From a third timing after the second timing, a first high frequency power LF for ion attraction is applied to the susceptor 12, and a self-bias (−Vdc) is generated. From a fourth timing close to the third timing, a negative second DC voltage −BDC corresponding to the self-bias (−Vdc) is applied to the susceptor 12. From the fifth timing after the fourth timing, a positive first DC voltage ADC is applied to an inner electrode 42 of the electrostatic chuck 38.

公开(公告)号：US20140231389A1

公开(公告)日：2014-08-21

申请号：US14183723

申请日：2014-02-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kohichi Nagami ,  Norikazu Yamada ,  Tadashi Gondai ,  Kouichi Yoshida

IPC: H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32706 ,  H01J37/32944

Abstract: At a first timing after mounting a semiconductor wafer W on an electrostatic chuck 38, a susceptor 12 is switched from an electrically grounded state into a floated state. From a second timing after the first timing, a second high frequency power HF for plasma generation is applied to the susceptor 12, and a processing gas is excited into plasma in a chamber 10. From a third timing after the second timing, a first high frequency power LF for ion attraction is applied to the susceptor 12, and a self-bias (−Vdc) is generated. From a fourth timing close to the third timing, a negative second DC voltage −BDC corresponding to the self-bias (−Vdc) is applied to the susceptor 12. From the fifth timing after the fourth timing, a positive first DC voltage ADC is applied to an inner electrode 42 of the electrostatic chuck 38.

Abstract translation: 在将半导体晶片W安装在静电卡盘38上的第一定时，基座12从电接地状态切换到浮动状态。 从第一定时之后的第二时刻开始，对基座12施加用于等离子体产生的第二高频功率HF，并将处理气体激发到室10内的等离子体。从第二定时以后的第三时刻开始，第一高 对基座12施加用于离子吸引的频率功率LF，产生自偏压（-Vdc）。 从靠近第三定时的第四定时，将与自偏压（-Vdc）相对应的负的第二直流电压-BDC施加到基座12.从第四定时之后的第五定时，正的第一直流电压ADC为 施加到静电卡盘38的内部电极42。