公开(公告)号：US20150179466A1

公开(公告)日：2015-06-25

申请号：US14574565

申请日：2014-12-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Wataru TAKAYAMA ,  Shoichiro MATSUYAMA ,  Susumu NOGAMI ,  Daisuke TAMURA ,  Kyosuke HAYASHI ,  Jun KAWANOBE

IPC: H01L21/308 ,  H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01L21/31144 ,  H01L21/32137 ,  H01L27/11582

Abstract: Provided is a method of manufacturing a semiconductor device. The method includes providing an object to be processed including a multilayer film formed by alternately laminating a first film and a second film having different dielectric coefficients within a processing container of a plasma processing apparatus; and repeatedly performing a sequence including: supplying a first gas including O2 gas or N2 gas, and a rare gas into the processing container and exciting the first gas, supplying a second gas including a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the second gas, and supplying a third gas including HBr gas, a fluorine-containing gas, and a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the third gas, so that the multilayer film is etched through a mask.

Abstract translation: 提供一种制造半导体器件的方法。 该方法包括提供一种待处理对象，其包括通过在等离子体处理装置的处理容器内交替层叠具有不同介电系数的第一膜和第二膜而形成的多层膜; 并且重复地执行包括：向所述处理容器供应包括O 2气体或N 2气体的第一气体和稀有气体，并且激发所述第一气体，将包括碳氟化合物气体或氟代烃气体的第二气体供应到所述处理容器中并激发 第二气体，并且将包括HBr气体，含氟气体，氟碳化合物气体或氟代烃气体的第三气体供给到处理容器中并激发第三气体，从而通过掩模蚀刻多层膜。