公开(公告)号：US20150114930A1

公开(公告)日：2015-04-30

申请号：US14527536

申请日：2014-10-29

申请人： TOKYO ELECTRON LIMITED

发明人： Ryo NONAKA ,  Masanori SATO ,  Natsuki YABUMOTO ,  Takamitsu TAKAYAMA ,  Akitoshi HARADA ,  Junichi SASAKI ,  Hidetoshi HANAOKA

IPC分类号： H01J37/32 ,  C23C4/12 ,  C23C14/34 ,  C23F4/00

CPC分类号： H01J37/32715 ,  H01J37/32477 ,  H01J37/34

摘要： A plasma processing method of the present disclosure includes attaching a Si-containing material or a N-containing material to an electrostatic chuck that is provided in a processing container and attached with a reaction product containing C and F, in a state where a workpiece is not mounted on the electrostatic chuck; adsorbing the workpiece by the electrostatic chuck attached with the Si-containing material or the N-containing material when the workpiece is carried into the processing container; processing the workpiece with plasma; and separating the workpiece processed with plasma from the electrostatic chuck attached with the Si-containing material or the N-containing material.

摘要翻译： 本公开的等离子体处理方法包括将Si含有材料或含氮材料附着到设置在处理容器中的静电卡盘，并且在工件为工件的状态下附着有含有C和F的反应产物 未安装在静电吸盘上; 当工件被运送到处理容器中时，通过附着有含Si材料或含氮材料的静电卡盘吸附工件; 用等离子体加工工件; 以及将由等离子体处理的工件与附着有含Si材料或含氮材料的静电卡盘分离。