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公开(公告)号：US20170004984A1
公开(公告)日：2017-01-05
申请号：US15185254
申请日：2016-06-17
IPC分类号： H01L21/677 , B08B9/00
CPC分类号： H01L21/67196 , B08B9/00 , G01N29/022 , G01N29/036 , G01N29/4427 , G01N2291/014 , G01N2291/0256 , G01N2291/0426 , H01L21/67253
摘要： A substrate transfer apparatus includes a transfer chamber in which a substrate is transferred, and a process chamber configured to process a substrate therein. A contamination monitor is provided in the transfer chamber and configured to detect a contamination condition of the transfer chamber.
摘要翻译： 基板转印装置包括其中转印有基板的转印室和被配置为在其中处理基板的处理室。 在传送室中设置污染监测器，并且构造成检测传送室的污染状况。
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2.发明申请公开(公告)号：US20210162468A1
公开(公告)日：2021-06-03
申请号：US17103918
申请日：2020-11-24
发明人： Takamitsu TAKAYAMA , Junichi SASAKI
摘要： A method of cleaning a stage in a plasma processing apparatus including the stage on which a substrate is placed, a lifting mechanism configured to raise and lower the substrate with respect to the stage, and a high-frequency power supply connected to the stage, includes: separating the stage and the substrate from each other using the lifting mechanism; and after the separating the stage and the substrate from each other, removing a deposit deposited on the stage with plasma generated by supplying a high-frequency power from the high-frequency power supply to the stage. In the separating the stage and the substrate from each other, a separation distance between the stage and the substrate is set such that a combined impedance formed around an outer peripheral portion of the stage is lower than a combined impedance formed immediately above a central portion of the stage.
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公开(公告)号：US20240087858A1
公开(公告)日：2024-03-14
申请号：US18518862
申请日：2023-11-24
发明人： Junichi SASAKI , Yubin YEO , Yuki ONODERA , Takamitsu TAKAYAMA
IPC分类号： H01J37/32
CPC分类号： H01J37/32853 , H01J2237/334
摘要： A cleaning method according to the present disclosure includes a first cleaning operation and a second cleaning operation, wherein the first cleaning operation includes: supplying a first processing gas to the interior of the chamber; and cleaning a region including the placement region of the stage by generating a first plasma from the first processing gas in a space defined by the placement region and the electrode, and the second cleaning operation includes: holding a dummy substrate at a predetermined position spaced by a predetermined distance from the placement region to face the placement region; supplying a second processing gas to the interior of the chamber; and cleaning a region including a periphery of the placement region of the stage by generating a second plasma from the second processing gas in a space defined by the dummy substrate held at the predetermined position and the electrode.
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公开(公告)号：US20150114930A1
公开(公告)日：2015-04-30
申请号：US14527536
申请日：2014-10-29
发明人： Ryo NONAKA , Masanori SATO , Natsuki YABUMOTO , Takamitsu TAKAYAMA , Akitoshi HARADA , Junichi SASAKI , Hidetoshi HANAOKA
CPC分类号： H01J37/32715 , H01J37/32477 , H01J37/34
摘要： A plasma processing method of the present disclosure includes attaching a Si-containing material or a N-containing material to an electrostatic chuck that is provided in a processing container and attached with a reaction product containing C and F, in a state where a workpiece is not mounted on the electrostatic chuck; adsorbing the workpiece by the electrostatic chuck attached with the Si-containing material or the N-containing material when the workpiece is carried into the processing container; processing the workpiece with plasma; and separating the workpiece processed with plasma from the electrostatic chuck attached with the Si-containing material or the N-containing material.
摘要翻译： 本公开的等离子体处理方法包括将Si含有材料或含氮材料附着到设置在处理容器中的静电卡盘，并且在工件为工件的状态下附着有含有C和F的反应产物 未安装在静电吸盘上; 当工件被运送到处理容器中时，通过附着有含Si材料或含氮材料的静电卡盘吸附工件; 用等离子体加工工件; 以及将由等离子体处理的工件与附着有含Si材料或含氮材料的静电卡盘分离。
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公开(公告)号：US20240347325A1
公开(公告)日：2024-10-17
申请号：US18750539
申请日：2024-06-21
发明人： Yuki ONODERA , Takamitsu TAKAYAMA
IPC分类号： H01J37/32 , H01L21/683
CPC分类号： H01J37/32862 , H01J37/32642 , H01J37/32715 , H01J2237/2007 , H01L21/6831
摘要： A plasma processing apparatus includes: a stage having first and second placement surfaces; an elevating mechanism for raising and lowering a ring member on the second placement surface with respect to the second placement surface; a radio-frequency power source; and a controller for executing a cleaning process including an operation of separating the second placement surface and the ring member from each other by the elevating mechanism; and an operation of removing deposits accumulated on the stage and the ring member by supplying radio-frequency power from the radio-frequency power source to the stage to generate plasma. In the separation operation, a distance between the second placement surface and the ring member is set such that a density of plasma generated in a region between an outer edge of the first placement surface and a lower surface of the ring member is higher than that of plasma generated in other regions.
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6.发明公开公开(公告)号：US20230173558A1
公开(公告)日：2023-06-08
申请号：US18104522
申请日：2023-02-01
发明人： Takamitsu TAKAYAMA , Junichi SASAKI
CPC分类号： B08B7/0035 , H01J37/32715 , H01J37/32862 , H01J2237/20235
摘要： A method of cleaning a stage in a plasma processing apparatus including the stage on which a substrate is placed, a lifting mechanism configured to raise and lower the substrate with respect to the stage, and a high-frequency power supply connected to the stage, includes: separating the stage and the substrate from each other using the lifting mechanism; and after the separating the stage and the substrate from each other, removing a deposit deposited on the stage with plasma generated by supplying a high-frequency power from the high-frequency power supply to the stage. In the separating the stage and the substrate from each other, a separation distance between the stage and the substrate is set such that a combined impedance formed around an outer peripheral portion of the stage is lower than a combined impedance formed immediately above a central portion of the stage.
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公开(公告)号：US20160196957A1
公开(公告)日：2016-07-07
申请号：US14962407
申请日：2015-12-08
IPC分类号： H01J37/32
CPC分类号： H01J37/32091 , H01J37/32165 , H01J37/32706
摘要： A plasma processing method is provided that includes a step of loading a substrate into a chamber where a plasma process is to be executed, a step of applying a high frequency bias power that has a lower frequency than a high frequency excitation power for plasma excitation to a mounting table on which the substrate is mounted, and a step of applying a DC voltage to an electrostatic chuck configured to electrostatically attract the substrate that is mounted on the mounting table. The step of applying the DC voltage is performed after the step of applying the high frequency bias power.
摘要翻译： 提供一种等离子体处理方法，其包括将基板装载到要执行等离子体处理的室中的步骤，将具有比用于等离子体激发的高频激发功率更低的频率的高频偏置功率施加到等离子体激发的步骤 安装基板的安装台，以及将静电卡盘配置为静电吸引安装在安装台上的基板的直流电压施加的步骤。 在施加高频偏置功率的步骤之后执行施加DC电压的步骤。
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