公开(公告)号：US20210162468A1

公开(公告)日：2021-06-03

申请号：US17103918

申请日：2020-11-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takamitsu TAKAYAMA ,  Junichi SASAKI

IPC: B08B7/00 ,  H01J37/32

Abstract: A method of cleaning a stage in a plasma processing apparatus including the stage on which a substrate is placed, a lifting mechanism configured to raise and lower the substrate with respect to the stage, and a high-frequency power supply connected to the stage, includes: separating the stage and the substrate from each other using the lifting mechanism; and after the separating the stage and the substrate from each other, removing a deposit deposited on the stage with plasma generated by supplying a high-frequency power from the high-frequency power supply to the stage. In the separating the stage and the substrate from each other, a separation distance between the stage and the substrate is set such that a combined impedance formed around an outer peripheral portion of the stage is lower than a combined impedance formed immediately above a central portion of the stage.

公开(公告)号：US20190074209A1

公开(公告)日：2019-03-07

申请号：US16116193

申请日：2018-08-29

Applicant: Tokyo Electron Limited

Inventor： Yasuharu SASAKI ,  Katsunori HIRAI ,  Junichi SASAKI

IPC: H01L21/687 ,  H01L21/683 ,  H01J37/32

Abstract: A dechuck control method of dechucking a processed object electrostatically attracted to an electrostatic chuck is provided. The method includes a step of dechucking the processed object by lifting the processed object with a supporting mechanism. The dechucking step is performed while applying a given voltage to an electrode of the electrostatic chuck.

公开(公告)号：US20220336193A1

公开(公告)日：2022-10-20

申请号：US17810523

申请日：2022-07-01

Applicant: Tokyo Electron Limited

Inventor： Junichi SASAKI ,  Yasuharu SASAKI ,  Hidetoshi HANAOKA ,  Tomohiko AKIYAMA

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/683

Abstract: A disclose substrate support of a plasma processing apparatus has an electrostatic chuck that holds an edge ring. The electrostatic chuck includes a first electrode and a second electrode. In an execution period of a first plasma processing on a substrate, first potentials which are ones out of potentials same as each other and potentials different from each other are set to the first and second electrodes, respectively. In an execution period of a second plasma processing on the substrate, second potentials which are others out of the potentials same as each other and the potentials different from each other are set to the first and second electrodes, respectively. The respective potentials of the first electrode and the second electrode are switched from the first potentials to the second potentials.

公开(公告)号：US20210074520A1

公开(公告)日：2021-03-11

申请号：US17005587

申请日：2020-08-28

Applicant: Tokyo Electron Limited

Inventor： Kota SHIHOMMATSU ,  Junji ISHIBASHI ,  Junichi SASAKI ,  Hidetoshi HANAOKA

IPC: H01J37/32

Abstract: An apparatus for plasma processing includes a chamber, a lower electrode on which a substrate is placed in the chamber, an edge ring disposed around the lower electrode, an upper electrode facing the lower electrode in the chamber, a member disposed around the upper electrode, a gas supply section configured to supply a process gas to a space between the member and the lower electrode, and a power supply for applying radio frequency power to the lower electrode or the upper electrode to generate a plasma of the process gas. The member includes an inner member and an outer member positioned outside the inner member, and the outer member is disposed outside the edge ring in a radial direction. At least part of the outer member is movable in a vertical direction.

公开(公告)号：US20230173558A1

公开(公告)日：2023-06-08

申请号：US18104522

申请日：2023-02-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takamitsu TAKAYAMA ,  Junichi SASAKI

IPC: B08B7/00 ,  H01J37/32

CPC classification number: B08B7/0035 ,  H01J37/32715 ,  H01J37/32862 ,  H01J2237/20235

Abstract: A method of cleaning a stage in a plasma processing apparatus including the stage on which a substrate is placed, a lifting mechanism configured to raise and lower the substrate with respect to the stage, and a high-frequency power supply connected to the stage, includes: separating the stage and the substrate from each other using the lifting mechanism; and after the separating the stage and the substrate from each other, removing a deposit deposited on the stage with plasma generated by supplying a high-frequency power from the high-frequency power supply to the stage. In the separating the stage and the substrate from each other, a separation distance between the stage and the substrate is set such that a combined impedance formed around an outer peripheral portion of the stage is lower than a combined impedance formed immediately above a central portion of the stage.

公开(公告)号：US20240087858A1

公开(公告)日：2024-03-14

申请号：US18518862

申请日：2023-11-24

Applicant: Tokyo Electron Limited

Inventor： Junichi SASAKI ,  Yubin YEO ,  Yuki ONODERA ,  Takamitsu TAKAYAMA

IPC: H01J37/32

CPC classification number: H01J37/32853 ,  H01J2237/334

Abstract: A cleaning method according to the present disclosure includes a first cleaning operation and a second cleaning operation, wherein the first cleaning operation includes: supplying a first processing gas to the interior of the chamber; and cleaning a region including the placement region of the stage by generating a first plasma from the first processing gas in a space defined by the placement region and the electrode, and the second cleaning operation includes: holding a dummy substrate at a predetermined position spaced by a predetermined distance from the placement region to face the placement region; supplying a second processing gas to the interior of the chamber; and cleaning a region including a periphery of the placement region of the stage by generating a second plasma from the second processing gas in a space defined by the dummy substrate held at the predetermined position and the electrode.

公开(公告)号：US20210118647A1

公开(公告)日：2021-04-22

申请号：US17027792

申请日：2020-09-22

Applicant: Tokyo Electron Limited

Inventor： Junichi SASAKI ,  Yasuharu SASAKI ,  Hidetoshi HANAOKA ,  Tomohiko AKIYAMA

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/311

Abstract: A disclose substrate support of a plasma processing apparatus has an electrostatic chuck that holds an edge ring. The electrostatic chuck includes a first electrode and a second electrode. In an execution period of a first plasma processing on a substrate, first potentials which are ones out of potentials same as each other and potentials different from each other are set to the first and second electrodes, respectively. In an execution period of a second plasma processing on the substrate, second potentials which are others out of the potentials same as each other and the potentials different from each other are set to the first and second electrodes, respectively. The respective potentials of the first electrode and the second electrode are switched from the first potentials to the second potentials.

公开(公告)号：US20150114930A1

公开(公告)日：2015-04-30

申请号：US14527536

申请日：2014-10-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryo NONAKA ,  Masanori SATO ,  Natsuki YABUMOTO ,  Takamitsu TAKAYAMA ,  Akitoshi HARADA ,  Junichi SASAKI ,  Hidetoshi HANAOKA

IPC: H01J37/32 ,  C23C4/12 ,  C23C14/34 ,  C23F4/00

CPC classification number: H01J37/32715 ,  H01J37/32477 ,  H01J37/34

Abstract: A plasma processing method of the present disclosure includes attaching a Si-containing material or a N-containing material to an electrostatic chuck that is provided in a processing container and attached with a reaction product containing C and F, in a state where a workpiece is not mounted on the electrostatic chuck; adsorbing the workpiece by the electrostatic chuck attached with the Si-containing material or the N-containing material when the workpiece is carried into the processing container; processing the workpiece with plasma; and separating the workpiece processed with plasma from the electrostatic chuck attached with the Si-containing material or the N-containing material.

Abstract translation: 本公开的等离子体处理方法包括将Si含有材料或含氮材料附着到设置在处理容器中的静电卡盘，并且在工件为工件的状态下附着有含有C和F的反应产物 未安装在静电吸盘上; 当工件被运送到处理容器中时，通过附着有含Si材料或含氮材料的静电卡盘吸附工件; 用等离子体加工工件; 以及将由等离子体处理的工件与附着有含Si材料或含氮材料的静电卡盘分离。