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公开(公告)号：US20210305023A1
公开(公告)日：2021-09-30
申请号：US17195787
申请日：2021-03-09
IPC分类号： H01J37/32 , H01L21/687 , H01L21/311
摘要： An edge ring formed of a material including boron carbide and silicon carbide is provided. The content by percentage of the boron carbide contained in the material is in a range between 30% and 50%.
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公开(公告)号：US20210142983A1
公开(公告)日：2021-05-13
申请号：US17086622
申请日：2020-11-02
发明人： Shintaro IKEDA , Hidetoshi HANAOKA , Naoki TAMARU
摘要： There is provision of a plasma processing apparatus including a processing vessel, a first member provided in the processing vessel, and a second member provided outside the first member. In at least one of the first member and the second member, a gas flow passage is formed, and the gas flow passage is configured to cause a gas to flow into a gap between the first member and the second member.
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公开(公告)号：US20170032936A1
公开(公告)日：2017-02-02
申请号：US15290846
申请日：2016-10-11
发明人： Akira KOSHIISHI , Masaru SUGIMOTO , Kunihiko HINATA , Noriyuki KOBAYASHI , Chishio KOSHIMIZU , Ryuji OHTANI , Kazuo KIBI , Masashi SAITO , Naoki MATSUMOTO , Manabu IWATA , Daisuke YANO , Yohei YAMAZAWA , Hidetoshi HANAOKA , Toshihiro HAYAMI , Hiroki YAMAZAKI , Manabu SATO
IPC分类号： H01J37/32
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32174 , H01J37/3244 , H01J37/32697 , H01J37/32706 , H01J2237/334 , H01L21/3065
摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.
摘要翻译： 一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。 被配置为施加具有相对较高频率的第一RF功率的第一RF电源和被配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。 可变直流电源连接到上电极。 将工艺气体供应到处理室中以产生处理气体的等离子体，以进行等离子体蚀刻。
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公开(公告)号：US20210118647A1
公开(公告)日：2021-04-22
申请号：US17027792
申请日：2020-09-22
IPC分类号： H01J37/32 , H01L21/683 , H01L21/311
摘要： A disclose substrate support of a plasma processing apparatus has an electrostatic chuck that holds an edge ring. The electrostatic chuck includes a first electrode and a second electrode. In an execution period of a first plasma processing on a substrate, first potentials which are ones out of potentials same as each other and potentials different from each other are set to the first and second electrodes, respectively. In an execution period of a second plasma processing on the substrate, second potentials which are others out of the potentials same as each other and the potentials different from each other are set to the first and second electrodes, respectively. The respective potentials of the first electrode and the second electrode are switched from the first potentials to the second potentials.
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公开(公告)号：US20210082669A1
公开(公告)日：2021-03-18
申请号：US17105118
申请日：2020-11-25
发明人： Akira KOSHIISHI , Masaru SUGIMOTO , Kunihiko HINATA , Noriyuki KOBAYASHI , Chishio KOSHIMIZU , Ryuji OHTANI , Kazuo KIBI , Masashi SAITO , Naoki MATSUMOTO , Yoshinobu OHYA , Manabu IWATA , Daisuke YANO , Yohei YAMAZAWA , Hidetoshi HANAOKA , Toshihiro HAYAMI , Hiroki YAMAZAKI , Manabu SATO
摘要： A plasma processing apparatus includes a process container that forms a process space to accommodate a target substrate, and a first electrode and a second electrode disposed opposite each other inside the process container. The first electrode is an upper electrode and the second electrode is a lower electrode and configured to support the target substrate through a mount face. A correction ring is disposed to surround the target substrate placed on the mount face of the second electrode. The correction ring includes a combination of a first ring to be around the target substrate and a second ring arranged around or above the first ring. A power supply unit is configured to apply a first electric potential and a second electric potential respectively to the first ring and the second ring to generate a potential difference between the first and second rings. The power supply unit is configured to variably set the potential difference.
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公开(公告)号：US20150114930A1
公开(公告)日：2015-04-30
申请号：US14527536
申请日：2014-10-29
发明人： Ryo NONAKA , Masanori SATO , Natsuki YABUMOTO , Takamitsu TAKAYAMA , Akitoshi HARADA , Junichi SASAKI , Hidetoshi HANAOKA
CPC分类号： H01J37/32715 , H01J37/32477 , H01J37/34
摘要： A plasma processing method of the present disclosure includes attaching a Si-containing material or a N-containing material to an electrostatic chuck that is provided in a processing container and attached with a reaction product containing C and F, in a state where a workpiece is not mounted on the electrostatic chuck; adsorbing the workpiece by the electrostatic chuck attached with the Si-containing material or the N-containing material when the workpiece is carried into the processing container; processing the workpiece with plasma; and separating the workpiece processed with plasma from the electrostatic chuck attached with the Si-containing material or the N-containing material.
摘要翻译： 本公开的等离子体处理方法包括将Si含有材料或含氮材料附着到设置在处理容器中的静电卡盘，并且在工件为工件的状态下附着有含有C和F的反应产物 未安装在静电吸盘上; 当工件被运送到处理容器中时，通过附着有含Si材料或含氮材料的静电卡盘吸附工件; 用等离子体加工工件; 以及将由等离子体处理的工件与附着有含Si材料或含氮材料的静电卡盘分离。
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公开(公告)号：US20140124139A1
公开(公告)日：2014-05-08
申请号：US14070190
申请日：2013-11-01
发明人： Akira KOSHIISHI , Masaru SUGIMOTO , Kunihiko HINATA , Noriyuki KOBAYASHI , Chishio KOSHIMIZU , Ryuji OHTANI , Kazuo KIBI , Masashi SAITO , Naoki MATSUMOTO , Yoshinobu OHYA , Manabu IWATA , Daisuke YANO , Yohei YAMAZAWA , Hidetoshi HANAOKA , Toshihiro HAYAMI , Hiroki YAMAZAKI , Manabu SATO
IPC分类号： H01J37/32
CPC分类号： H01J37/32422 , H01J37/32018 , H01J37/32091 , H01J37/3244 , H01J37/32522 , H01J37/32834 , H01J2237/2001 , H01J2237/334 , H01J2237/3344 , H01L21/67069 , Y10S156/915
摘要： A plasma processing apparatus includes a first and second electrodes disposed on upper and lower sides and opposite each other within a process container, a first RF power application unit and a DC power supply both connected to the first electrode, and second and third radio frequency power application units both connected to the second electrode. A conductive member is disposed within the process container and grounded to release through plasma a current caused by a DC voltage applied from the DC power supply. The conductive member is supported by a first shield part around the second electrode and laterally protruding therefrom at a position between the mount face of the second electrode and an exhaust plate for the conductive member to be exposed to the plasma. The conductive member is grounded through a conductive internal body of the first shield part.
摘要翻译： 一种等离子体处理装置，包括在处理容器内设置在上侧和下侧并彼此相对的第一和第二电极，连接到第一电极的第一RF电力施加单元和DC电源，以及第二和第三射频功率 应用单元都连接到第二电极。 导电构件设置在处理容器内并接地以通过等离子体释放由直流电源施加的直流电压引起的电流。 导电构件由第二电极周围的第一屏蔽部分支撑，并且在第二电极的安装面和用于导电构件的排气板之间的位置处侧向突出以暴露于等离子体。 导电构件通过第一屏蔽部分的导电内部主体接地。
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公开(公告)号：US20220336193A1
公开(公告)日：2022-10-20
申请号：US17810523
申请日：2022-07-01
IPC分类号： H01J37/32 , H01L21/311 , H01L21/683
摘要： A disclose substrate support of a plasma processing apparatus has an electrostatic chuck that holds an edge ring. The electrostatic chuck includes a first electrode and a second electrode. In an execution period of a first plasma processing on a substrate, first potentials which are ones out of potentials same as each other and potentials different from each other are set to the first and second electrodes, respectively. In an execution period of a second plasma processing on the substrate, second potentials which are others out of the potentials same as each other and the potentials different from each other are set to the first and second electrodes, respectively. The respective potentials of the first electrode and the second electrode are switched from the first potentials to the second potentials.
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公开(公告)号：US20210074520A1
公开(公告)日：2021-03-11
申请号：US17005587
申请日：2020-08-28
IPC分类号： H01J37/32
摘要： An apparatus for plasma processing includes a chamber, a lower electrode on which a substrate is placed in the chamber, an edge ring disposed around the lower electrode, an upper electrode facing the lower electrode in the chamber, a member disposed around the upper electrode, a gas supply section configured to supply a process gas to a space between the member and the lower electrode, and a power supply for applying radio frequency power to the lower electrode or the upper electrode to generate a plasma of the process gas. The member includes an inner member and an outer member positioned outside the inner member, and the outer member is disposed outside the edge ring in a radial direction. At least part of the outer member is movable in a vertical direction.
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公开(公告)号：US20200312634A1
公开(公告)日：2020-10-01
申请号：US16831032
申请日：2020-03-26
发明人： Hirofumi OHTA , Hidetoshi HANAOKA , Ayuta SUZUKI
IPC分类号： H01J37/32
摘要： A plasma processing apparatus includes a conductive mounting table, a conductive member, and a first insulating member. The conductive mounting table has a mounting portion on which a substrate is mounted and a stepped portion positioned lower than the mounting portion. The conductive member is disposed on the stepped portion and extends outward over an outer periphery of the mounting table. Further, a first insulating member is disposed on or above an upper surface of the conductive member.
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