公开(公告)号：US20140024143A1

公开(公告)日：2014-01-23

申请号：US13945759

申请日：2013-07-18

Applicant: Tokyo Electron Limited

Inventor： Shifang LI ,  Junwei Bao ,  Hanyou Chu ,  Wen Jin ,  Ching-Ling Meng ,  Weiwen Xu ,  Ping Wang ,  Holger Tuitje ,  Mihail Mihaylov ,  Xinkang Tian

IPC: H01L21/66

CPC classification number: H01L22/12 ,  H01J37/32972 ,  H01L22/26

Abstract: Disclosed is an in-situ optical monitor (ISOM) system and associated method for controlling plasma etching processes during the forming of stepped structures in semiconductor manufacturing. The in-situ optical monitor (ISOM) can be optionally configured for coupling to a surface-wave plasma source (SWP), for example a radial line slotted antenna (RLSA) plasma source. A method is described to correlate the lateral recess of the steps and the etched thickness of a photoresist layer for use with the in-situ optical monitor (ISOM) during control of plasma etching processes in the forming of stepped structures.

Abstract translation: 公开了一种在半导体制造中形成阶梯式结构期间控制等离子体蚀刻工艺的原位光学监视器（ISOM）系统及其相关方法。 可以可选地，原位光学监视器（ISOM）被配置为耦合到表面波等离子体源（SWP），例如径向线槽天线（RLSA）等离子体源。 描述了一种方法，以便在形成阶梯式结构的等离子体蚀刻过程的控制期间，使步骤的侧向凹陷和光致抗蚀剂层的蚀刻厚度与原位光学监视器（ISOM）一起使用。

公开(公告)号：US09059038B2

公开(公告)日：2015-06-16

申请号：US13945759

申请日：2013-07-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shifang Li ,  Junwei Bao ,  Hanyou Chu ,  Wen Jin ,  Ching-Ling Meng ,  Weiwen Xu ,  Ping Wang ,  Holger Tuitje ,  Mihail Mihaylov ,  Xinkang Tian

IPC: H01L21/66 ,  H01J37/32

CPC classification number: H01L22/12 ,  H01J37/32972 ,  H01L22/26

Abstract: Disclosed is an in-situ optical monitor (ISOM) system and associated method for controlling plasma etching processes during the forming of stepped structures in semiconductor manufacturing. The in-situ optical monitor (ISOM) can be optionally configured for coupling to a surface-wave plasma source (SWP), for example a radial line slotted antenna (RLSA) plasma source. A method is described to correlate the lateral recess of the steps and the etched thickness of a photoresist layer for use with the in-situ optical monitor (ISOM) during control of plasma etching processes in the forming of stepped structures.

Abstract translation: 公开了一种在半导体制造中形成阶梯式结构期间控制等离子体蚀刻工艺的原位光学监视器（ISOM）系统及其相关方法。 可以可选地，原位光学监视器（ISOM）被配置为耦合到表面波等离子体源（SWP），例如径向线槽天线（RLSA）等离子体源。 描述了一种方法，以便在形成阶梯式结构的等离子体蚀刻过程的控制期间，使步骤的侧向凹陷和光致抗蚀剂层的蚀刻厚度与原位光学监视器（ISOM）一起使用。

公开(公告)号：US20180286643A1

公开(公告)日：2018-10-04

申请号：US15472494

申请日：2017-03-29

Applicant: Tokyo Electron Limited

Inventor： Holger TUITJE ,  Xinkang Tian ,  Ching-Ling Meng ,  Vi Vuong ,  Wen Jin ,  Zheng Yan ,  Mihail Mihaylov

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/66 ,  G01N21/31 ,  G06N99/00

Abstract: An apparatus, system, and method for in-situ etching monitoring in a plasma processing chamber. The apparatus includes a continuous wave broadband light source; an illumination system configured to illuminate an area on a substrate with an incident light beam having a fixed polarization direction, the incident light beam from the broadband light source being modulated by a shutter; a collection system configured to collect a reflected light beam being reflected from the illuminated area on the substrate, and direct the reflected light beam to a detector; and processing circuitry. The processing circuitry is configured to process the reflected light beam to suppress background light, determine a property value from the processed light, and control an etch process based on the determined property value.

公开(公告)号：US09490183B2

公开(公告)日：2016-11-08

申请号：US14714254

申请日：2015-05-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Wen Jin ,  Junwei Bao

IPC: G01N23/00 ,  H01L21/66 ,  G01N23/225 ,  G01N23/04

CPC classification number: H01L22/12 ,  G01N23/04 ,  G01N23/225

Abstract: Described is a method and system for measuring parameters of a structure on a substrate, such as a via or a through-silicon via (TSV) using an imaging X-ray metrology system. A previously-trained Support Vector Machine (SVM) model is used to extract structure parameters from the acquired structure X-ray images. Training of the Support Vector Machine (SVM) model is accomplished by using a library of actual or simulated X-ray images, or a combination of the two image types, paired with structure parameter sets.

Abstract translation: 描述了一种用于使用成像X射线测量系统测量诸如通孔或穿硅通孔（TSV）的衬底上的结构的参数的方法和系统。 使用先前训练的支持向量机（SVM）模型从所获取的结构X射线图像中提取结构参数。 支持向量机（SVM）模型的训练通过使用实际或模拟X射线图像库或两种图像类型的组合与结构参数集配对来实现。