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公开(公告)号：US09970818B2
公开(公告)日：2018-05-15
申请号：US14530164
申请日：2014-10-31
Applicant: TOKYO ELECTRON LIMITED
Inventor： Junwei Bao , Ching-Ling Meng , Holger Tuitje , Mihail Mihaylov , Yan Chen , Zheng Yan , Haixing Zou , Hanyou Chu
CPC classification number: G01J3/443 , G01N21/31 , G01N21/68 , G01N2201/10
Abstract: Disclosed is a method, computer method, system, and apparatus for measuring two-dimensional distributions of optical emissions from a plasma in a semiconductor plasma processing chamber. The acquired two-dimensional distributions of plasma optical emissions can be used to infer the two-dimensional distributions of concentrations of certain chemical species of interest that are present in the plasma, and thus provide a useful tool for process development and also for new and improved processing tool development. The disclosed technique is computationally simple and inexpensive, and involves the use of an expansion of the assumed optical intensity distribution into a sum of basis functions that allow for circumferential variation of optical intensity. An example of suitable basis functions are Zernike polynomials.
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公开(公告)号：US20170140905A1
公开(公告)日：2017-05-18
申请号：US15351916
申请日：2016-11-15
Applicant: Tokyo Electron Limited
Inventor： Mihail Mihaylov , Xinkang Tian , Ching-Ling Meng , Jason Ferns , Joel Ng , Badru D. Hyatt , Zheng Yan , Vi Vuong
Abstract: An advanced optical sensor and method for detection of optical events in a plasma processing system. The method includes detecting at least one light emission signal in a plasma processing chamber. The at least one detected light emission signal including light emissions from an optical event. The method further includes processing the at least one light emission signal and detecting a signature of the optical event from the processed light emission signal.
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公开(公告)号：US10473525B2
公开(公告)日：2019-11-12
申请号：US15648035
申请日：2017-07-12
Applicant: TOKYO ELECTRON LIMITED
Inventor： Ching-Ling Meng , Holger Tuitje , Yan Chen , Mihail Mihaylov
Abstract: Disclosed is a method, system, and apparatus for optical emission measurement. The apparatus includes a collection system for collecting a plasma optical emission spectra through an optical window disposed at a wall of a plasma processing chamber. The optical system includes a mirror configured to scan a plurality of non-coincident rays across the plasma processing chamber; and a telecentric coupler for collecting an optical signal from a plasma and directing the optical signal to a spectrometer for measuring the plasma optical emission spectra.
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4.发明申请SYSTEM FOR IN-SITU FILM STACK MEASUREMENT DURING ETCHING AND ETCH CONTROL METHOD 有权在蚀刻和蚀刻控制方法期间的现场薄膜堆叠测量系统公开(公告)号：US20140024143A1
公开(公告)日：2014-01-23
申请号：US13945759
申请日：2013-07-18
Applicant: Tokyo Electron Limited
Inventor： Shifang LI , Junwei Bao , Hanyou Chu , Wen Jin , Ching-Ling Meng , Weiwen Xu , Ping Wang , Holger Tuitje , Mihail Mihaylov , Xinkang Tian
IPC: H01L21/66
CPC classification number: H01L22/12 , H01J37/32972 , H01L22/26
Abstract: Disclosed is an in-situ optical monitor (ISOM) system and associated method for controlling plasma etching processes during the forming of stepped structures in semiconductor manufacturing. The in-situ optical monitor (ISOM) can be optionally configured for coupling to a surface-wave plasma source (SWP), for example a radial line slotted antenna (RLSA) plasma source. A method is described to correlate the lateral recess of the steps and the etched thickness of a photoresist layer for use with the in-situ optical monitor (ISOM) during control of plasma etching processes in the forming of stepped structures.
Abstract translation: 公开了一种在半导体制造中形成阶梯式结构期间控制等离子体蚀刻工艺的原位光学监视器（ISOM）系统及其相关方法。 可以可选地，原位光学监视器（ISOM）被配置为耦合到表面波等离子体源（SWP），例如径向线槽天线（RLSA）等离子体源。 描述了一种方法，以便在形成阶梯式结构的等离子体蚀刻过程的控制期间，使步骤的侧向凹陷和光致抗蚀剂层的蚀刻厚度与原位光学监视器（ISOM）一起使用。
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Patent Agency Ranking
公开(公告)号：US20250157801A1
公开(公告)日：2025-05-15
申请号：US18505810
申请日：2023-11-09
Applicant: Tokyo Electron Limited
Inventor： Francisco Machuca , Joel Ng , Mihail Mihaylov , Xinkang Tian
IPC: H01J37/32
Abstract: An optical emission spectroscopy (OES) detection device includes an optical collector configured to be optically coupled to a plasma in a plasma processing apparatus, an adjustable wavelength filter optically coupled to the optical collector, and a photodetector optically coupled to the adjustable wavelength filter. The optical collector receives an optical signal from the plasma. The adjustable wavelength filter is configured to automatically adjust a passband of the adjustable wavelength filter to include a selected wavelength in response to receiving a wavelength selection signal, and allow a filtered portion of the optical signal to pass through while excluding a remaining portion of the optical signal. The filtered portion includes the selected wavelength. The photodetector is configured to generate an OES measurement in response to detecting the filtered portion of the optical signal with a response time that is less than one millisecond.
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6.发明授权System for in-situ film stack measurement during etching and etch control method 有权用于在蚀刻期间进行原位膜堆测量的系统和蚀刻控制方法公开(公告)号：US09059038B2
公开(公告)日：2015-06-16
申请号：US13945759
申请日：2013-07-18
Applicant: TOKYO ELECTRON LIMITED
Inventor： Shifang Li , Junwei Bao , Hanyou Chu , Wen Jin , Ching-Ling Meng , Weiwen Xu , Ping Wang , Holger Tuitje , Mihail Mihaylov , Xinkang Tian
CPC classification number: H01L22/12 , H01J37/32972 , H01L22/26
Abstract: Disclosed is an in-situ optical monitor (ISOM) system and associated method for controlling plasma etching processes during the forming of stepped structures in semiconductor manufacturing. The in-situ optical monitor (ISOM) can be optionally configured for coupling to a surface-wave plasma source (SWP), for example a radial line slotted antenna (RLSA) plasma source. A method is described to correlate the lateral recess of the steps and the etched thickness of a photoresist layer for use with the in-situ optical monitor (ISOM) during control of plasma etching processes in the forming of stepped structures.
Abstract translation: 公开了一种在半导体制造中形成阶梯式结构期间控制等离子体蚀刻工艺的原位光学监视器（ISOM）系统及其相关方法。 可以可选地，原位光学监视器（ISOM）被配置为耦合到表面波等离子体源（SWP），例如径向线槽天线（RLSA）等离子体源。 描述了一种方法，以便在形成阶梯式结构的等离子体蚀刻过程的控制期间，使步骤的侧向凹陷和光致抗蚀剂层的蚀刻厚度与原位光学监视器（ISOM）一起使用。
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公开(公告)号：US20240339309A1
公开(公告)日：2024-10-10
申请号：US18298259
申请日：2023-04-10
Applicant: Tokyo Electron Limited
Inventor： Sergey Voronin , Francisco Machuca , Blaze Messer , Yan Chen , Ying Zhu , Mihail Mihaylov , Joel Ng , Ashawaraya Shalini , Da Song , Akiteru Ko
CPC classification number: H01J37/32972 , H01J37/18 , H01J37/32357 , H01J37/32963 , H01J2237/3343
Abstract: A processing system that includes: a processing chamber configured to hold a substrate to be processed; a first vacuum pump; a second vacuum pump disposed downstream from the first vacuum pump; an exhaust gas line connecting the process chamber and the first vacuum pump, and the first vacuum pump and the second vacuum pump; a plasma power supply including a first RF power source configured to generate a plasma from a portion of an exhaust gas between the first and second vacuum pumps; and an optical emission spectroscopy (OES) measurement assembly including an OES detector configured to measure OES signals from the plasma.
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公开(公告)号：US10692705B2
公开(公告)日：2020-06-23
申请号：US15351916
申请日：2016-11-15
Applicant: Tokyo Electron Limited
Inventor： Mihail Mihaylov , Xinkang Tian , Ching-Ling Meng , Jason Ferns , Joel Ng , Badru D. Hyatt , Zheng Yan , Vi Vuong
Abstract: An advanced optical sensor and method for detection of optical events in a plasma processing system. The method includes detecting at least one light emission signal in a plasma processing chamber. The at least one detected light emission signal including light emissions from an optical event. The method further includes processing the at least one light emission signal and detecting a signature of the optical event from the processed light emission signal.
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公开(公告)号：US20180286643A1
公开(公告)日：2018-10-04
申请号：US15472494
申请日：2017-03-29
Applicant: Tokyo Electron Limited
Inventor： Holger TUITJE , Xinkang Tian , Ching-Ling Meng , Vi Vuong , Wen Jin , Zheng Yan , Mihail Mihaylov
Abstract: An apparatus, system, and method for in-situ etching monitoring in a plasma processing chamber. The apparatus includes a continuous wave broadband light source; an illumination system configured to illuminate an area on a substrate with an incident light beam having a fixed polarization direction, the incident light beam from the broadband light source being modulated by a shutter; a collection system configured to collect a reflected light beam being reflected from the illuminated area on the substrate, and direct the reflected light beam to a detector; and processing circuitry. The processing circuitry is configured to process the reflected light beam to suppress background light, determine a property value from the processed light, and control an etch process based on the determined property value.
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