公开(公告)号：US20190229009A1

公开(公告)日：2019-07-25

申请号：US16370030

申请日：2019-03-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Atsushi TANAKA ,  Ryohei OGAWA

IPC: H01L21/687 ,  H01L21/67 ,  H01L21/3065

Abstract: A substrate placing table, which is installed inside a processing container for processing a wafer, includes: a stage configured to place a wafer on an upper surface thereof and including an inner peripheral flow channel and an outer peripheral flow channel formed therein to circulate a heat medium of a predetermined temperature therethrough; a support table configured to support the stage; and a temperature adjusting plate installed between the stage and the support table, and including a temperature adjusting mechanism configured to adjust a temperature of a heat radiation portion at which heat is radiated between the stage and the support table.

公开(公告)号：US20170352576A1

公开(公告)日：2017-12-07

申请号：US15521217

申请日：2015-09-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Atsushi TANAKA ,  Ryohei OGAWA

IPC: H01L21/687 ,  H01L21/67 ,  H01L21/311

CPC classification number: H01L21/68785 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67103

Abstract: A substrate placing table, which is installed inside a processing container for processing a wafer, includes: a stage configured to place a water on an upper surface thereof and including an inner peripheral flow channel and an outer peripheral flow channel formed therein to circulate a heat medium of a predetermined temperature therethrough; a support table configured to support the stage; and a temperature adjusting plate installed between the stage and the support table, and including a temperature adjusting mechanism configured to adjust a temperature of a heat radiation portion at which heat is radiated between the stage and the support table.