公开(公告)号：US20160163562A1

公开(公告)日：2016-06-09

申请号：US14900877

申请日：2014-06-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shigeki TOZAWA ,  Tomoaki OGIWARA

IPC: H01L21/311

CPC classification number: H01L21/31116

Abstract: An etching method includes a modification process of supplying a mixture gas to a surface of a silicon oxide film, modifying the silicon oxide film to generate a reaction product, and a heating process of heating and removing the reaction product. The modification process includes a first modification process of supplying the mixture gas containing a gas including a halogen element and an alkaline gas to the surface of the silicon oxide film, and a second modification process of stopping supplying the alkaline gas and supplying the mixture gas containing the gas including the halogen element to the surface of the silicon oxide film.

Abstract translation: 蚀刻方法包括将混合气体供给到氧化硅膜的表面，改性氧化硅膜以产生反应产物的改性方法以及加热和除去反应产物的加热方法。 改性方法包括将含有含有卤素元素和碱性气体的气体的混合气体供给到氧化硅膜的表面的第一改性方法，以及停止供给碱性气体并供给含有 包括卤素元素的气体到氧化硅膜的表面。

公开(公告)号：US20160247690A1

公开(公告)日：2016-08-25

申请号：US15027740

申请日：2014-09-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki TAKAHASHI ,  Yoshihiko NAKAMURA ,  Shigeki TOZAWA ,  Yusuke NAKAMURA ,  Susumu HOSAKA

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/687 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/02164 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/68757

Abstract: An etching device for etching a silicon-containing film formed on a substrate W is includes: a chamber; a substrate mounting mechanism provided in the chamber; a gas supply mechanism configured to supply an etching gas composed of fluorine, hydrogen, and nitrogen into the chamber; and an exhaust mechanism. The substrate mounting mechanism includes: a mounting table; temperature adjusting mechanisms configured to adjust a temperature of a mounting surface of the mounting table to 50 degrees C. or less; and a heating member configured to heat at least a portion of surfaces other than the mounting surface in the mounting table to 60 to 100 degrees C. A resin coating layer is formed at least on the mounting surface of the mounting table.

Abstract translation: 用于蚀刻形成在基板W上的含硅膜的蚀刻装置包括：室; 设置在所述室中的基板安装机构; 气体供给机构，其构造成将由氟，氢，氮构成的蚀刻气体供给到所述室内; 和排气机构。 基板安装机构包括：安装台; 配置为将安装台的安装表面的温度调节到50摄氏度以下的温度调节机构; 以及加热构件，其构造成将安装台中的除安装面以外的表面的至少一部分加热至60〜100℃。树脂涂层至少形成在安装台的安装面上。