公开(公告)号：US20160247690A1

公开(公告)日：2016-08-25

申请号：US15027740

申请日：2014-09-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki TAKAHASHI ,  Yoshihiko NAKAMURA ,  Shigeki TOZAWA ,  Yusuke NAKAMURA ,  Susumu HOSAKA

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/687 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/02164 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/68757

Abstract: An etching device for etching a silicon-containing film formed on a substrate W is includes: a chamber; a substrate mounting mechanism provided in the chamber; a gas supply mechanism configured to supply an etching gas composed of fluorine, hydrogen, and nitrogen into the chamber; and an exhaust mechanism. The substrate mounting mechanism includes: a mounting table; temperature adjusting mechanisms configured to adjust a temperature of a mounting surface of the mounting table to 50 degrees C. or less; and a heating member configured to heat at least a portion of surfaces other than the mounting surface in the mounting table to 60 to 100 degrees C. A resin coating layer is formed at least on the mounting surface of the mounting table.

Abstract translation: 用于蚀刻形成在基板W上的含硅膜的蚀刻装置包括：室; 设置在所述室中的基板安装机构; 气体供给机构，其构造成将由氟，氢，氮构成的蚀刻气体供给到所述室内; 和排气机构。 基板安装机构包括：安装台; 配置为将安装台的安装表面的温度调节到50摄氏度以下的温度调节机构; 以及加热构件，其构造成将安装台中的除安装面以外的表面的至少一部分加热至60〜100℃。树脂涂层至少形成在安装台的安装面上。