公开(公告)号：US20250013213A1

公开(公告)日：2025-01-09

申请号：US18884523

申请日：2024-09-13

Applicant: Tokyo Electron Limited

Inventor： Ken HIRANO ,  Takari YAMAMOTO ,  Takashi KUBO ,  Haruki OMINE ,  Masaki KITSUNEZUKA ,  Toshihiro KITAO

IPC: G05B13/04 ,  G05B13/02

Abstract: An analysis apparatus, a substrate processing system, a substrate processing apparatus, an analysis method, and an analysis program improve adjustment accuracy in adjusting the temperature of a substrate. The analysis apparatus includes circuitry that performs training to generate a trained model using setting parameters for temperature adjustment elements in regions divided from a substrate support in a process space in a first vacuum environment and using a first temperature data set that is data of temperatures at positions on a substrate supported by the substrate support, and that calculates setting parameters for the temperature adjustment elements corresponding to a target temperature of the substrate using the trained model.

公开(公告)号：US20220406579A1

公开(公告)日：2022-12-22

申请号：US17843054

申请日：2022-06-17

Applicant: Tokyo Electron Limited

Inventor： Takashi KUBO ,  Kippei SUGITA ,  Yuhei SHIMATSU

IPC: H01J37/32 ,  G01J1/58

Abstract: A measurement method includes: (a) measuring an emission intensity for each wavelength of light detected from a plasma generated in a plasma processing apparatus at each different exposure time by a light receiving element; (b) specifying, with respect to each of a plurality of different individual wavelength ranges that constitutes a predetermined wavelength range, a distribution of the emission intensity in the individual wavelength range measured at an exposure time at which an emission intensity of a predetermined wavelength included in the individual wavelength range becomes an emission intensity within a predetermined range; (c) selecting a distribution of the emission intensity in the individual wavelength range from the distribution of the emission intensity specified in (b); and (d) outputting the distribution of the emission intensity selected for each individual wavelength range.

公开(公告)号：US20170301518A1

公开(公告)日：2017-10-19

申请号：US15508054

申请日：2015-09-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuki HOSAKA ,  Yoshihiro UMEZAWA ,  Mayo UDA ,  Takashi KUBO

IPC: H01J37/32 ,  F16K31/04 ,  C23C16/455 ,  F16K3/08 ,  H01L21/67

Abstract: According to an aspect, a gas supply mechanism for supplying a gas to a semiconductor manufacturing apparatus is provided. The gas supply mechanism includes a pipe connecting a gas source and the semiconductor manufacturing apparatus to each other, and a valve which is provided on the pipe. The valve includes a plate rotatable about an axis, the axis extending in a plate thickness direction, and a housing provided along the plate without contacting the plate to accommodate the plate, the housing providing a gas supply path along with the pipe. A through hole is formed in the plate, the through hole penetrating the plate at a position on a circle which extends around the axis and intersects the gas supply path.