公开(公告)号：US11127597B2

公开(公告)日：2021-09-21

申请号：US16617992

申请日：2018-03-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Reiko Sasahara ,  Satoshi Toda ,  Takuya Abe ,  Tsuhung Huang ,  Yoshie Ozawa ,  Ken Nakagomi ,  Kenichi Nakahata ,  Kenshiro Asahi

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/3105

Abstract: There is provided an etching method including: a step of disposing a substrate in a chamber, the substrate having a silicon nitride film, a silicon oxide film, a silicon, and a silicon germanium; a step of setting a pressure in the chamber to 1,333 Pa or more; and a step of selectively etching the silicon nitride film with respect to the silicon oxide film, the silicon, and the silicon germanium by supplying a hydrogen fluoride gas into the chamber.

公开(公告)号：US11024514B2

公开(公告)日：2021-06-01

申请号：US16523541

申请日：2019-07-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takuya Abe ,  Hidenori Miyoshi ,  Akitaka Shimizu ,  Koichi Nagakura

IPC: H01L21/311 ,  H01L21/3065 ,  H01L21/67 ,  H01L27/11582

Abstract: There is provided an etching method including: loading a substrate having a recess and an etching target portion existing on an inner surface of the recess into a processing container, the etching target portion being made of SiN or Si; preferentially modifying a surface of the etching target portion at a top portion of the recess by performing an oxygen-containing plasma process on the substrate inside the processing container; and subsequently, dry-etching the etching target portion in an isotropic manner.