公开(公告)号：US10964546B2

公开(公告)日：2021-03-30

申请号：US16308572

申请日：2017-03-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Reiko Sasahara ,  Tsuhung Huang ,  Teppei Okumura

IPC: H01L21/324 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/3215 ,  H01L21/67

Abstract: There is provided a substrate processing method which is capable of suitably etching a boron-doped silicon. According to the present invention, a wafer W including an SiB layer made of boron-doped silicon is exposed to a fluorine gas and an ammonia gas, and the wafer W mounted on a stage is heated.

公开(公告)号：US11127597B2

公开(公告)日：2021-09-21

申请号：US16617992

申请日：2018-03-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Reiko Sasahara ,  Satoshi Toda ,  Takuya Abe ,  Tsuhung Huang ,  Yoshie Ozawa ,  Ken Nakagomi ,  Kenichi Nakahata ,  Kenshiro Asahi

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/3105

Abstract: There is provided an etching method including: a step of disposing a substrate in a chamber, the substrate having a silicon nitride film, a silicon oxide film, a silicon, and a silicon germanium; a step of setting a pressure in the chamber to 1,333 Pa or more; and a step of selectively etching the silicon nitride film with respect to the silicon oxide film, the silicon, and the silicon germanium by supplying a hydrogen fluoride gas into the chamber.

公开(公告)号：US10734243B2

公开(公告)日：2020-08-04

申请号：US15841147

申请日：2017-12-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tsuhung Huang ,  Jun Lin ,  Takehiko Orii

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/3213 ,  H01L21/677 ,  H01L21/306

Abstract: In an etching method for removing a processing target layer formed on a substrate for manufacturing electronic devices, a first break-through process of removing an oxide film formed on a surface of the processing target layer is performed, and a first main etching process of etching the processing target layer is performed after the first break-through process. Then, a second break-through process of removing the oxide film exposed after the first main etching process is performed, and a second main etching process of etching the processing target layer is performed after the second break-through process.