公开(公告)号：US11946879B2

公开(公告)日：2024-04-02

申请号：US17275935

申请日：2019-09-13

Applicant: TOKYO INSTITUTE OF TECHNOLOGY

Inventor： Mutsuko Hatano ,  Takayuki Iwasaki ,  Nobuhiko Nishiyama ,  Yuta Masuyama ,  Takuya Murooka

IPC: G01N22/00 ,  H01L27/144 ,  H01L31/028 ,  H01L31/105

CPC classification number: G01N22/00 ,  H01L27/1446 ,  H01L31/028 ,  H01L31/105

Abstract: A thin film has a band gap of 2.2 eV or more and in which a crystal includes an atomic vacancy and an electron, a microwave irradiation system configured to irradiate the thin film with a microwave in response to driving from outside, an excitation unit configured to excite the electron included in the thin film in response to driving from outside, and a detector configured to detect, as an electric signal, at least either one of an intensity of light outputted from the thin film when the electron transitions from an excited state to a ground state and a change in conductivity of the thin film based on excitation.