Chemically amplified positive-type photosensitive resin composition
    1.
    发明授权
    Chemically amplified positive-type photosensitive resin composition 有权
    化学放大正型感光性树脂组合物

    公开(公告)号:US09557651B2

    公开(公告)日:2017-01-31

    申请号:US14662659

    申请日:2015-03-19

    摘要: A chemically amplified positive-type photosensitive resin composition capable of suppressing the phenomenon of footing in which the width of the bottom (the side proximal to the surface of a support) becomes narrower than that of the top (the side proximal to the surface of a resist layer) when a resist pattern serving as a template for a plated article is formed on a metal surface of a substrate using the composition. A mercapto compound is contained in the composition which includes an acid generator capable of producing an acid when irradiated with an active ray or radiation and a resin whose solubility in alkali increases under the action of acid.

    摘要翻译: 一种化学放大型正型感光性树脂组合物,其能够抑制底部的宽度(支撑体的表面近侧)的宽度变得比顶部(接近表面的一侧 抗蚀剂层),当使用该组合物在基板的金属表面上形成用作电镀制品的模板的抗蚀剂图案时。 在组合物中含有巯基化合物,该组合物包含能够在用活性射线或辐射照射时能够产生酸的酸发生剂和在酸的作用下在碱中溶解度增加的树脂。

    CHEMICALLY AMPLIFIED POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION
    2.
    发明申请
    CHEMICALLY AMPLIFIED POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION 有权
    化学放大型阳离子型光敏树脂组合物

    公开(公告)号:US20150268553A1

    公开(公告)日:2015-09-24

    申请号:US14662659

    申请日:2015-03-19

    IPC分类号: G03F7/004 G03F7/20

    摘要: A chemically amplified positive-type photosensitive resin composition capable of suppressing the phenomenon of footing in which the width of the bottom (the side proximal to the surface of a support) becomes narrower than that of the top (the side proximal to the surface of a resist layer) when a resist pattern serving as a template for a plated article is formed on a metal surface of a substrate using the composition. A mercapto compound is contained in the composition which includes an acid generator capable of producing an acid when irradiated with an active ray or radiation and a resin whose solubility in alkali increases under the action of acid.

    摘要翻译: 一种化学放大型正型感光性树脂组合物,其能够抑制底部的宽度(支撑体的表面近侧)的宽度变得比顶部(接近表面的一侧 抗蚀剂层),当使用该组合物在基板的金属表面上形成用作电镀制品的模板的抗蚀剂图案时。 在组合物中含有巯基化合物,该组合物包含能够在用活性射线或辐射照射时能够产生酸的酸发生剂和在酸的作用下在碱中溶解度增加的树脂。

    Method for producing thick film photoresist pattern
    3.
    发明授权
    Method for producing thick film photoresist pattern 有权
    厚膜光致抗蚀剂图案的制造方法

    公开(公告)号:US09244354B2

    公开(公告)日:2016-01-26

    申请号:US13708081

    申请日:2012-12-07

    IPC分类号: G03F7/20 G03F7/004

    摘要: A method for producing a thick film photoresist pattern including laminating a thick photoresist layer including a chemically amplified positive-type photoresist composition for thick film on a support; irradiating the thick photoresist layer; and developing the thick photoresist layer to obtain a thick film resist pattern; in which the composition includes an acid generator, a resin whose alkali solubility increases by the action of an acid, and an organic solvent having a boiling point of at least 150° C. and a contact angle on a silicon substrate of no greater than 18°, in an amount of at least 40% by mass with respect to total mass of the organic solvent.

    摘要翻译: 一种制备厚膜光致抗蚀剂图案的方法,包括将包括用于厚膜的化学放大正型光致抗蚀剂组合物的厚光致抗蚀剂层层压在载体上; 照射厚的光致抗蚀剂层; 并显影厚的光致抗蚀剂层以获得厚膜抗蚀剂图案; 其中所述组合物包括酸产生剂,其碱溶解度由酸的作用增加的树脂和沸点为至少150℃的有机溶剂和硅基底上的接触角不大于18的树脂 °,相对于有机溶剂的总质量为至少40质量%。

    METHOD FOR PRODUCING THICK FILM PHOTORESIST PATTERN
    6.
    发明申请
    METHOD FOR PRODUCING THICK FILM PHOTORESIST PATTERN 有权
    生产厚膜光电子图案的方法

    公开(公告)号:US20130171572A1

    公开(公告)日:2013-07-04

    申请号:US13708081

    申请日:2012-12-07

    IPC分类号: G03F7/20

    摘要: A method for producing a thick film photoresist pattern including laminating a thick photoresist layer including a chemically amplified positive-type photoresist composition for thick film on a support; irradiating the thick photoresist layer; and developing the thick photoresist layer to obtain a thick film resist pattern; in which the composition includes an acid generator, a resin whose alkali solubility increases by the action of an acid, and an organic solvent having a boiling point of at least 150° C. and a contact angle on a silicon substrate of no greater than 18°, in an amount of at least 40% by mass with respect to total mass of the organic solvent.

    摘要翻译: 一种制备厚膜光致抗蚀剂图案的方法,包括将包括用于厚膜的化学放大正型光致抗蚀剂组合物的厚光致抗蚀剂层层压在载体上; 照射厚的光致抗蚀剂层; 并显影厚的光致抗蚀剂层以获得厚膜抗蚀剂图案; 其中所述组合物包括酸产生剂,其碱溶解度由酸的作用增加的树脂和沸点为至少150℃的有机溶剂和硅基底上的接触角不大于18的树脂 °,相对于有机溶剂的总质量为至少40质量%。