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公开(公告)号：US20220017741A1
公开(公告)日：2022-01-20
申请号：US17305618
申请日：2021-07-12
发明人： Teruaki HAYAKAWA , Lei DONG , Takahiro DAZAI , Ken MIYAGI , Takayoshi MORI , Daisuke KAWANA
IPC分类号： C08L53/00 , C08F212/08 , C08F220/14 , C08F220/38 , B05D7/24 , B05D5/00 , B05D3/02
摘要： A resin composition for forming a phase-separated structure containing a block copolymer having a first block and a second block, in which the first block is formed of a constituent unit represented by Formula (b1), the second block is formed of a constituent unit represented by Formula (b2m) and a random copolymer having a constituent unit represented by Formula (b2g), and a ratio of a volume of the first block is 20% to 80% by volume. In the formulas, R1 is a hydrogen atom or an alkyl group, Rb1 is a hydrogen atom or a methyl group, R2 is an alkyl group which may have a silicon atom, a fluorine atom, a carboxy group, an amino group, a hydroxy group, or a phosphoric acid group, R3 is a linear or branched alkylene group having 1 to 10 carbon atoms, which may have a hydroxy group, and Rb2 is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms
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公开(公告)号：US20160266495A1
公开(公告)日：2016-09-15
申请号：US14883875
申请日：2015-10-15
IPC分类号： G03F7/32
CPC分类号： G03F7/11 , C08F22/22 , C08F22/36 , C08F22/38 , C08F26/02 , C08F26/06 , C08F220/26 , C08F220/30 , C08F220/36 , C08F2220/283 , C08F2220/285 , G03F7/0045 , G03F7/0046 , G03F7/325 , G03F7/405 , H01L21/0274
摘要： A method of forming a resist pattern, including: step A in which a first resist pattern is formed on a substrate, step B in which a basic composition is applied to cover the first resist pattern, step C in which a base contained in the basic composition and the first resist pattern are neutralized to form a developing solution insoluble region on a surface of the first resist pattern, and step D in which the covered first resist pattern is developed, the basic composition containing a basic component, and the basic component containing a polymeric compound having a structural unit (x0) represented by general formula (x0-1) (R is H, C1˜5 alkyl group, C1˜5 halogenated alkyl group; Vx01 is divalent hydrocarbon group having ether bond or amide bond or divalent aromatic hydrocarbon group; Yx01 is single bond or divalent linking group; Rx1 is substituent having nitrogen atom).
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公开(公告)号：US20170168396A1
公开(公告)日：2017-06-15
申请号：US15366244
申请日：2016-12-01
发明人： Takayoshi MORI , Ryoji WATANABE , Yoichi HORI
CPC分类号： G03F7/0397 , G03F7/0035 , G03F7/0045 , G03F7/162 , G03F7/168 , G03F7/2006 , G03F7/322
摘要： A method for forming a resist pattern including forming a first contact hole pattern including a hole portion and a hole-unformed portion, which includes alkali developing the exposed positive-type resist film; preparing a structure including the first contact hole pattern and a first layer which covers the first contact hole pattern, which includes forming a first layer by applying a solution including an acid or a thermal acid generator onto a support on which the first contact hole pattern is formed; forming organic solvent-soluble and organic solvent-insoluble regions on the hole-unformed portion, which includes heating the structure; and forming a second contact hole pattern on the hole-unformed portion, which includes developing the heated structure with an organic solvent.
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公开(公告)号：US20160349617A1
公开(公告)日：2016-12-01
申请号：US15158992
申请日：2016-05-19
摘要： A method of forming a resist pattern including forming a first resist pattern on a substrate; applying a cross-linking composition so as to cover the first resist pattern; heating the covered first resist pattern and crosslinking an isocyanate group in the cross-linking composition with the first resist pattern; and developing the covered first resist pattern, wherein the cross-linking composition includes a blocked isocyanate compound having a protected isocyanate group.
摘要翻译： 一种形成抗蚀剂图案的方法，包括在基板上形成第一抗蚀剂图案; 施加交联组合物以覆盖第一抗蚀剂图案; 加热被覆盖的第一抗蚀剂图案，并使交联组合物中的异氰酸酯基团与第一抗蚀剂图案交联; 并且显影所覆盖的第一抗蚀剂图案，其中所述交联组合物包括具有受保护的异氰酸酯基的封端异氰酸酯化合物。
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公开(公告)号：US20170059994A1
公开(公告)日：2017-03-02
申请号：US15241519
申请日：2016-08-19
发明人： Kazufumi SATO , Mitsuo HAGIHARA , Tomoya KUMAGAI , Masahito YAHAGI , Kenta SUZUKI , Takayoshi MORI , Ryoji WATANABE
CPC分类号： G03F7/322 , G03F7/2059
摘要： A method of forming a resist pattern including forming a resist film on a support using a resist composition; subjecting the resist film to exposure; and forming a resist pattern by developing the resist film having undergone the exposure, in which the developing is performed using a developer which contains a basic compound represented by the following formula (1) and tetrabutylammonium hydroxide, and in which the concentration of tetrabutylammonium hydroxide is equal to or greater than 2.5% by mass and less than 2.8% by mass: in which R1 to R4 each independently represent a linear or branched alkyl group, and the total number of carbon atoms contained in each of the alkyl groups represented by R1 to R4 is 4 to 15.
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