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1.发明申请公开(公告)号：US20180102246A1
公开(公告)日：2018-04-12
申请号：US15724591
申请日：2017-10-04
发明人： Ryoji WATANABE
IPC分类号： H01L21/027 , G03F7/00 , G03F7/40 , H01L21/302 , H01L21/02 , C08F8/14 , H01L21/311
CPC分类号： G03F7/11 , C08F8/14 , C08L71/02 , G03F7/0035 , G03F7/40 , G03F7/405 , H01L21/0212 , H01L21/0273 , H01L21/0275 , H01L21/302 , H01L21/31127
摘要： A coating agent capable of favorably reducing the roughness of a resist pattern, and a method for forming a resist pattern in which roughness is reduced. The method includes coating the resist pattern with the coating agent. The coating agent is a composition including a resin, an amine compound, and a solvent, the amine compound having an aliphatic hydrocarbon group having 8 to 20 carbon atoms and having 1 or more unsaturated double bond and a group having a specific amount of ethylene oxide and/or propylene oxide added thereto.
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2.发明申请公开(公告)号：US20180101098A1
公开(公告)日：2018-04-12
申请号：US15724474
申请日：2017-10-04
发明人： Ryoji WATANABE
IPC分类号： G03F7/11 , G03F7/40 , G03F7/16 , C09D139/06
CPC分类号： G03F7/11 , C08K5/06 , C08K5/17 , C09D139/06 , G03F7/162 , G03F7/168 , G03F7/40 , H01L21/0274 , H01L21/31138
摘要： A coating agent capable of favorably reducing the roughness of a resist pattern and a method for forming a resist pattern in which roughness is reduced. The method includes coating the resist pattern with the coating agent. The coating agent is a composition including a resin, a quaternary carbon-atom-containing compound, and a solvent, the quaternary carbon-atom-containing compound having an aliphatic hydrocarbon group having 1 to 8 carbon atoms and a group having a specific structure having a specific amount of ethylene oxide and/or propylene oxide added thereto.
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公开(公告)号：US20170168396A1
公开(公告)日：2017-06-15
申请号：US15366244
申请日：2016-12-01
发明人： Takayoshi MORI , Ryoji WATANABE , Yoichi HORI
CPC分类号： G03F7/0397 , G03F7/0035 , G03F7/0045 , G03F7/162 , G03F7/168 , G03F7/2006 , G03F7/322
摘要： A method for forming a resist pattern including forming a first contact hole pattern including a hole portion and a hole-unformed portion, which includes alkali developing the exposed positive-type resist film; preparing a structure including the first contact hole pattern and a first layer which covers the first contact hole pattern, which includes forming a first layer by applying a solution including an acid or a thermal acid generator onto a support on which the first contact hole pattern is formed; forming organic solvent-soluble and organic solvent-insoluble regions on the hole-unformed portion, which includes heating the structure; and forming a second contact hole pattern on the hole-unformed portion, which includes developing the heated structure with an organic solvent.
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公开(公告)号：US20190341253A1
公开(公告)日：2019-11-07
申请号：US16387164
申请日：2019-04-17
发明人： Keiichi IBATA , Ryoji WATANABE
IPC分类号： H01L21/033 , H01L21/027 , G03F7/004 , G03F7/038 , G03F7/039 , C08G61/12 , H01L21/311 , C08G8/20 , C08G8/10
摘要： A hard-mask forming composition, which is used for forming a hard mask used in lithography, including a first resin and a second resin, in which an amount of carbon contained in the first resin is 85% by mass or more with respect to the total mass of all elements constituting the first resin, and the amount of carbon contained in the second resin is 70% by mass or more with respect to the total mass of all elements constituting the second resin and less than the amount of carbon contained in the first resin.
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公开(公告)号：US20170059994A1
公开(公告)日：2017-03-02
申请号：US15241519
申请日：2016-08-19
发明人： Kazufumi SATO , Mitsuo HAGIHARA , Tomoya KUMAGAI , Masahito YAHAGI , Kenta SUZUKI , Takayoshi MORI , Ryoji WATANABE
CPC分类号： G03F7/322 , G03F7/2059
摘要： A method of forming a resist pattern including forming a resist film on a support using a resist composition; subjecting the resist film to exposure; and forming a resist pattern by developing the resist film having undergone the exposure, in which the developing is performed using a developer which contains a basic compound represented by the following formula (1) and tetrabutylammonium hydroxide, and in which the concentration of tetrabutylammonium hydroxide is equal to or greater than 2.5% by mass and less than 2.8% by mass: in which R1 to R4 each independently represent a linear or branched alkyl group, and the total number of carbon atoms contained in each of the alkyl groups represented by R1 to R4 is 4 to 15.
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公开(公告)号：US20160097979A1
公开(公告)日：2016-04-07
申请号：US14875458
申请日：2015-10-05
发明人： Rikita TSUNODA , Ryoji WATANABE , Yoichi HORI
CPC分类号： G03F7/40 , G03F7/0397 , G03F7/20 , G03F7/30 , G03F7/325 , G03F7/405 , H01L21/0273 , H01L21/0274
摘要： A method of trimming a resist pattern, including forming a positive resist film on a substrate, the positive resist film is exposed and the positive resist film is subjected to an alkali development to form a first resist pattern having an alkali-insoluble region on the surface thereof; applying a resist trimming composition including an acid to the substrate on which the first resist pattern is formed; a heating the first resist pattern coated with the resist trimming composition, and the solubility of the first resist pattern in a developing solution is changed under action of the acid included in the resist trimming composition; and developing the first resist pattern after heating with an organic solvent to remove the alkali-insoluble region of the first resist pattern, the resist trimming composition including the acid and a solvent which does not dissolve the first resist pattern.
摘要翻译： 一种修整抗蚀剂图案的方法，包括在基板上形成正性抗蚀剂膜，暴露正性抗蚀剂膜，并将正性抗蚀剂膜进行碱显影以在表面上形成具有碱不溶性区域的第一抗蚀剂图案 的; 在其上形成有第一抗蚀剂图案的基板上涂布含有酸的抗蚀剂修饰组合物; 加热涂布有抗蚀剂修整组合物的第一抗蚀剂图案，并且第一抗蚀剂图案在显影液中的溶解度在抗蚀剂修剪组合物中包含的酸的作用下改变; 并且在用有机溶剂加热后显影第一抗蚀剂图案以除去第一抗蚀剂图案的碱不溶性区域，该抗蚀剂修整组合物包括不溶解第一抗蚀剂图案的酸和溶剂。
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