摘要:
This photoconductive target comprises a photoconductive member consisting of two layers: a first layer 0.5 micron minimum thick formed on a transparent electrode and a second layer 0.6 micron maximum thick superposed on the first layer so as to be disposed on the side electron gun. The first layer is solely or mainly made of cadmium selenide, and the second layer is formed from a high resistance semiconductor material.
摘要:
An image pickup tube is manufactured by setting a PN junction type semiconductor target having a resistive sea made of cadmium telluride in a glass envelope and heating the envelope at 120*C to 400*C to effect evacuation.
摘要:
An image pickup tube comprises a cylindrical envelope, a target disposed at the front portion of said envelope, and an electron gun assembly so housed in said envelope as to shoot electron beams against said target, said target having a signal pickup electrode disposed outside the effective scanning region of the target.
摘要:
THIS PHOTOCONDUCTIVE TARGET COMPRISESAPHOTOCONDUCTIVETIVE MEMBER CONSISTING OF TWO LAYERS: A FIRST LAYER 0.5 MICRON MINIMUM THICK FORMED ON A TRANSPARENT ELECTRODE AND A SECOND LAYER 0.6 MICRON MAXIMUN THICK SUPERPOSED ON THE FIRST LAYER SO AS TO DISPOSED ON THE SIDE ELECTRON
GUN. THE FIRST LAYER IS SOLELY OR MAINLY MADE OF CADMIUM SELENIDE, AND THE SECOND LAYER IS FORMED FROM A HIGH RESISTANCE SEMICONDUCTOR MATERIAL.