Optoelectronic recording tape or strip comprising photoconductive layer
on thin, monocrystalline, flexible sapphire base
    1.
    发明授权
    Optoelectronic recording tape or strip comprising photoconductive layer on thin, monocrystalline, flexible sapphire base 失效
    在薄的单晶,柔性蓝宝石基底上的光电记录带或条带包含光电导层

    公开(公告)号:US4862414A

    公开(公告)日:1989-08-29

    申请号:US872899

    申请日:1986-06-11

    CPC classification number: G03G5/082 G03G5/104 G11B11/002 G11B9/08 H01J29/45

    Abstract: An optoelectronic signal recording and storage medium including a base layer, a conductive layer, a photoconductive layer and storage layer has a coherent crystal morphology throughout, even though the chemical and electrical properties of its layers are by choice dramatically different. The base layer is preferably made of monocrystalline sapphire grown in a manner as to allow the growth of the other layers directly on a surface of the base layer without the need to grind and polish that surface, thereby minimizing internal defects in the medium. The monocrystalline base layer also allows the acceptance of exeptionally uniformly distributed charges over wide areas of the medium, thereby enabling the medium to locally record and store minutely differing optoelectronic signals on a background of minimal noise, thus facilitating low light level electronic or optical recording and long term storage of signals and minimal energy readout of those stored signals. The medium base layer can be thin enough to be flexible and transparent and yet to have great strength to provide a firm foundation for the other medium layers. A method of making the medium is also disclosed.

    Image pickup tube faceplate structure
    2.
    发明授权
    Image pickup tube faceplate structure 失效
    摄像管面板结构

    公开(公告)号:US4405938A

    公开(公告)日:1983-09-20

    申请号:US265810

    申请日:1981-05-21

    Inventor: Saburo Nobutoki

    CPC classification number: H01J29/45

    Abstract: In the faceplate structure of image pickup tube having an organic coat, an inorganic transparent conductive film and an inorganic photoconductive film sequentially laminated on the central part of a transparent glass base, the inorganic transparent conductive film and the inorganic photoconductive film are formed so that they are non-porous in at least part of their respective sub-layers in the direction of lamination. Further, the transparent conductive film and the photoconductive film have a larger area than that of the organic coat so that they will completely cover the organic coat.

    Abstract translation: 在具有有机涂层的图像拾取管的面板结构中,无机透明导电膜和无机光导电膜依次层压在透明玻璃基底的中心部分上,形成无机透明导电膜和无机光电导膜,使得它们 在它们各自的子层的至少部分层叠的方向上是非多孔的。 此外,透明导电膜和光电导膜的面积大于有机涂层的面积,使得它们将完全覆盖有机涂层。

    Light-sensitive target
    3.
    发明授权
    Light-sensitive target 失效
    光敏目标

    公开(公告)号:US3974415A

    公开(公告)日:1976-08-10

    申请号:US469115

    申请日:1974-05-13

    Applicant: Claus Kunze

    Inventor: Claus Kunze

    CPC classification number: H01J29/45

    Abstract: A light-sensitive target for a color television system which includes a transparent carrier plate such as the front plate of a color television camera, having discrete strips of interference filter material disposed thereon. The strips are disposed in parallel relation on the inside surface of the transparent carrier. An intermediate layer is formed over these strips to eliminate abrupt or sharp edges presented by the strip to the inside surface of the tube. A conductive layer is formed over the intermediate layer and finally a light sensitive medium is disposed over the entire inside surface of the system. By means of the intermediate layer, the contour between the light-sensitive and the conductive layers are caused to have generally rounded configurations, thereby eliminating interferences.

    Abstract translation: 一种用于彩色电视系统的感光目标,其包括诸如彩色电视摄像机的前板的透明载板,其上设置有分立的干涉滤光片条。 条带平行地设置在透明载体的内表面上。 在这些条上形成中间层,以消除由带材向管内表面呈现的突出或尖锐的边缘。 在中间层上形成导电层,最后将光敏介质设置在系统的整个内表面上。 通过中间层,使感光层和导电层之间的轮廓具有大致圆形的结构,从而消除干扰。

    Gain photo-current enhancement method
    4.
    发明授权
    Gain photo-current enhancement method 失效
    增益光电增强方法

    公开(公告)号:US3939346A

    公开(公告)日:1976-02-17

    申请号:US507044

    申请日:1974-09-18

    Inventor: Simpei Tutihashi

    CPC classification number: H01J29/45 H01L31/18

    Abstract: High quantum yields of gain photocurrent provided by sandwiching an insulating layer in contact with a photoconductor between two electrodes, applying an electrical potential thereacross, and directing excitation light upon the photoconductor are increased by simultaneously impinging the photoconductor with infrared radiation during exposure to the excitation light where the photoconductor comprises selenium or a selenium alloy. In cyclical operation of gain photocurrent devices having a photoconductive layer comprising selenium or a selenium alloy, fatigue effects are overcome by irradiation with infrared radiation.

    Abstract translation: 通过在暴露于激发光的同时将红外辐射同时照射到感光体上,通过在两个电极之间夹持与光电导体接触的绝缘层,跨越施加电位并将激发光引导到光电导体上而获得的增益光电流的高量子产率增加 其中光电导体包括硒或硒合金。 在具有包含硒或硒合金的光导电层的增益光电流装置的周期性操作中,通过用红外辐射照射来克服疲劳效应。

    Photosensitive charge storage electrode having a selectively conducting protective layer of matching valence band on its surface
    7.
    发明授权
    Photosensitive charge storage electrode having a selectively conducting protective layer of matching valence band on its surface 失效
    具有选择性导电保护层的感光电荷存储电极匹配表面带

    公开(公告)号:US3783324A

    公开(公告)日:1974-01-01

    申请号:US3783324D

    申请日:1972-09-11

    Applicant: RCA CORP

    CPC classification number: H01J29/45 H01J9/233

    Abstract: A photosensitive charge storage electrode comprises a photoconductive substrate having a bulk region with a surface region of reduced conductivity. On the surface region is a selectively insulating layer of a composition such that the top of the valence band of the layer is essentially at the same energy level as the top of the valence band in the bulk region of the photoconductive substrate.

    Abstract translation: 光敏电荷存储电极包括具有导电性降低的表面区域的主体区域的光导基板。 表面区域是组成物的选择性绝缘层,使得该层的价带的顶部基本上处于与光电导基体的体区域中的价带顶部相同的能级。

    Fabrication process for light sensitive silicon diode array target
    8.
    发明授权
    Fabrication process for light sensitive silicon diode array target 失效
    光敏二极管阵列目标的制造工艺

    公开(公告)号:US3669768A

    公开(公告)日:1972-06-13

    申请号:US3669768D

    申请日:1969-12-04

    CPC classification number: H01L27/00 H01J29/45 H01L31/18

    Abstract: IN THE FABRICATION OF SILICON DIODE ARRAY TARGETS FOR VIDEO CAMERA TUBES THE INITIAL PN JUNCTION DIODE DIFFUSION HEAT TREATMENTS USING A BORON SOURCE, PRODUCES A P TYPE SHEET RESISTANCE IN THE RANGE OF 10 TO 500 OHMS PER SQUARE. VALUES BELOW THIS RANGE PRODUCE A BORON RICH GLASS WHICH IS DIFFICULT TO REMOVE WITHOUT PRODUCING DEFECTS. VALUES ABOVE THIS RANGE DO NOT PRODUCE SUFFICIENT BORON RICH GLASS TO BE EFFECTIVE IN GETTERING CERTAIN IMPURITIES. THIS DIFFUSION IS FOLLOWED BY TREATMENT AT A TEMPERATURE COMPARABLE TO THE DIFFUSION TEMPERATURE, FOR AN APPRECIABLE PERIOD IN A NITROGEN ATMOSPHERE TO MINIMIZE THE OCCURRENCE OF CERTAIN DEFECTS. THE HEAT TREATMENT OF THE SEMICONDUCOR SLICE MAY, ALTERNATIVELY, TERMINATE WITH A RAPID COOLING OR QUENCHING STEP. FOLLOWING THE SECOND IMPURITY DIFFUSION INTO THE LIGHT SENSITIVE FACE OF THE TARGET AN ANNEALING TREATMENT IS PERFORMED FOR ABOUT ONE HOUR AT A RELATIVELY LOW TEMPERATURE IN A REDUCING ATMOSPHERE, TYPICALLY HYDROGEN, TO MINIMIZE DARK CURRENT.

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