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    Image pickup tube semiconductor target support structure
    3.
    发明授权
    Image pickup tube semiconductor target support structure 失效
    图像抽吸管半导体目标支持结构

    公开(公告)号：US3702410A

    公开(公告)日：1972-11-07

    申请号：US3702410D

    申请日：1971-04-20

    申请人： TOKYO SHIBAURA ELECTRIC CO

    发明人： MIYASHIRO SHOICHI ,  SHIROUZU SHUNJI ,  TSUJI SHIGEO

    IPC分类号： H01J29/44 ,  H01L27/00 ,  H01J31/28 ,  H01J29/02 ,  H01J31/38

    CPC分类号： H01J29/44 ,  H01L27/00

    摘要： An image intensifier vidicon which is divided by a semiconductor target into an image section, the inner surface of the face plate of which is coated with an electron-emissive layer and a scanning section, wherein said semi-conductor target includes a semiconductor substrate, a plurality of PN junctions formed therein, an accelerating layer formed on the electron incident side of said target, and a scanning surface which is protected from contamination by alkali metals constituting the electronemissive layer by means of insulation rings provided in the scanning section. One of the insulation rings also set the critical spacing between the target and a mesh electrode.

    摘要翻译： 将由半导体靶分割成图像部分的图像增强器视频体，其面板的内表面涂覆有电子发射层和扫描部分，其中所述半导体靶包括半导体衬底， 形成在其中的多个PN结，形成在所述靶的电子入射侧上的加速层和通过设置在扫描部中的绝缘环来防止构成电子发射层的碱金属的污染的扫描表面。 绝缘环中的一个还设置了靶和网状电极之间的临界间隔。