公开(公告)号：US11067886B2

公开(公告)日：2021-07-20

申请号：US16625652

申请日：2018-06-29

Applicant: TOPPAN PRINTING CO., LTD.

Inventor： Toru Komizo ,  Norihito Fukugami

IPC: G03F1/24 ,  G03F1/58

Abstract: A reflective photomask blank (10) of a first aspect includes a substrate (1); a reflective layer (2) formed on the substrate (1); and a light absorbing layer (4) formed on the reflective layer (2) and including a tin oxide film with a film thickness of 17 nm or more and less than 25.0 nm. Consequently, the shadowing effect of a reflective photomask for pattern transfer using extreme ultraviolet light as a light source is suppressed or reduced to improve the performance of transfer to a semiconductor substrate, and further, pattern collapse due to cleaning of the reflective photomask is suppressed.

公开(公告)号：US11906896B2

公开(公告)日：2024-02-20

申请号：US17292409

申请日：2019-11-01

Applicant: TOPPAN PRINTING CO., LTD.

Inventor： Toru Komizo ,  Norihito Fukugami ,  Genta Watanabe ,  Eisuke Narita

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: There is provided a reflective photomask blank and a reflective photomask having good irradiation resistance and capable of obtaining good transfer performance. A reflective photomask blank (10) contains a reflective layer (2) reflecting incident light and an absorption layer (4) absorbing incident light, which are formed in this order on one surface side of a substrate (1). The absorption layer (4) contains a first material selected from the group consisting of tin, indium, and tellurium and a second material containing one or two or more kinds of materials selected from the group consisting of transition metals, bismuth (Bi), and silicon (Si) at least in the outermost layer. The content of the second material is more than 20 at and less than 50 at % in the same laver.

公开(公告)号：US11294270B2

公开(公告)日：2022-04-05

申请号：US16626290

申请日：2018-06-29

Applicant: TOPPAN PRINTING CO., LTD.

Inventor： Norihito Fukugami ,  Toru Komizo

IPC: G03F1/24

Abstract: A reflective photomask blank (10) of a first aspect includes a substrate (1); a reflective layer (2) formed on the substrate (1); and a light absorbing layer (4) formed on the reflective layer (2). The light absorbing layer (4) includes a tin oxide film with an atomic ratio (O/Sn) of oxygen (O) to tin (Sn) being more than 1.50 and equal to or less than 2.0, and with a film thickness of 25 nm or more and 45 nm or less. Consequently, the shadowing effect of a reflective photomask for pattern transfer using extreme ultraviolet light as a light source is suppressed or reduced to improve the performance of transfer to a semiconductor substrate, and further, the cleaning resistance of the light absorbing layer is improved.