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公开(公告)号：US10372029B2
公开(公告)日：2019-08-06
申请号：US15138960
申请日：2016-04-26
Applicant: TOPPAN PRINTING CO., LTD.
Inventor： Tomohiro Imoto , Norihito Fukugami
Abstract: There are provided a reflective mask and a reflective mask blank reducing reflection of out-of-band light and a manufacturing method therefor. A light shielding frame is formed on a mask region corresponding to a multiply exposed boundary region between a chip and a semiconductor substrate. The frame is provided with an antireflective layer causing surface reflection in antiphase to out-of-band light reflected from the surfaces of a rear-surface conductive film and the substrate to provide a reflective mask reducing reflection of out-of-band light. The antireflective layer of the present disclosure has an electrical conductivity of 1×104/mΩ or greater to minimize charging occurring in a pattern region in observing the region using an electron microscope.
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公开(公告)号：US11067886B2
公开(公告)日：2021-07-20
申请号：US16625652
申请日：2018-06-29
Applicant: TOPPAN PRINTING CO., LTD.
Inventor： Toru Komizo , Norihito Fukugami
Abstract: A reflective photomask blank (10) of a first aspect includes a substrate (1); a reflective layer (2) formed on the substrate (1); and a light absorbing layer (4) formed on the reflective layer (2) and including a tin oxide film with a film thickness of 17 nm or more and less than 25.0 nm. Consequently, the shadowing effect of a reflective photomask for pattern transfer using extreme ultraviolet light as a light source is suppressed or reduced to improve the performance of transfer to a semiconductor substrate, and further, pattern collapse due to cleaning of the reflective photomask is suppressed.
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公开(公告)号：US20140170536A1
公开(公告)日：2014-06-19
申请号：US14187885
申请日：2014-02-24
Applicant: TOPPAN PRINTING CO., LTD.
Inventor： Norihito Fukugami , Yo Sakata , Kazuaki Matsui , Genta Watanabe
IPC: G03F1/24
Abstract: A reflective mask having a light-shielding frame with high light-shielding performance, and a method for manufacturing thereof. In a reflective mask having a light-shielding frame dug into a multilayered reflective layer, when side etching is performed or processing to obtain a reverse tapered shape is performed only on the multilayered reflective layer, it becomes possible to suppress reflection of EUV light (extreme ultraviolet light) in the vicinity of the edge of the light-shielding frame, provide a reflective mask having high light-shielding ability, and form a transcription pattern with high accuracy.
Abstract translation: 具有遮光性能好的遮光框的反射罩及其制造方法。 在具有被切割成多层反射层的遮光框的反射掩模中，当进行侧面蚀刻时，仅在多层反射层上进行反转锥形形状的处理，可以抑制EUV光的反射（极端 紫外光）在遮光框的边缘附近，提供了具有高遮光能力的反射掩模，并且以高精度形成转录图案。
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4.发明授权公开(公告)号：US09448468B2
公开(公告)日：2016-09-20
申请号：US14227705
申请日：2014-03-27
Applicant: TOPPAN PRINTING CO., LTD.
Inventor： Masahito Tanabe , Norihito Fukugami , Yo Sakata , Tooru Komizo , Takashi Haraguchi
Abstract: A reflective mask blank, a reflective mask, and methods for manufacturing those, which suppress reflectance at a light-shielding frame. The reflective mask includes a substrate, a multilayered reflective layer formed on the substrate, an absorption layer formed on the multilayered reflective layer, and a frame-shaped light-shielding frame area at which the absorption layer has a film thickness larger than a film thickness at other areas. The multilayered reflective layer is diffused and mixed at the light-shielding frame area through melting.
Abstract translation: 反射型掩模坯料，反射型掩模，以及抑制遮光框的反射率的制造方法。 反射掩模包括基板，形成在基板上的多层反射层，形成在多层反射层上的吸收层和吸收层的膜厚大于膜厚的框状遮光框区域 在其他地区。 多层反射层通过熔化在遮光框架区域扩散混合。
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公开(公告)号：US11906896B2
公开(公告)日：2024-02-20
申请号：US17292409
申请日：2019-11-01
Applicant: TOPPAN PRINTING CO., LTD.
Inventor： Toru Komizo , Norihito Fukugami , Genta Watanabe , Eisuke Narita
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: There is provided a reflective photomask blank and a reflective photomask having good irradiation resistance and capable of obtaining good transfer performance. A reflective photomask blank (10) contains a reflective layer (2) reflecting incident light and an absorption layer (4) absorbing incident light, which are formed in this order on one surface side of a substrate (1). The absorption layer (4) contains a first material selected from the group consisting of tin, indium, and tellurium and a second material containing one or two or more kinds of materials selected from the group consisting of transition metals, bismuth (Bi), and silicon (Si) at least in the outermost layer. The content of the second material is more than 20 at and less than 50 at % in the same laver.
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Patent Agency Ranking
公开(公告)号：US11294270B2
公开(公告)日：2022-04-05
申请号：US16626290
申请日：2018-06-29
Applicant: TOPPAN PRINTING CO., LTD.
Inventor： Norihito Fukugami , Toru Komizo
IPC: G03F1/24
Abstract: A reflective photomask blank (10) of a first aspect includes a substrate (1); a reflective layer (2) formed on the substrate (1); and a light absorbing layer (4) formed on the reflective layer (2). The light absorbing layer (4) includes a tin oxide film with an atomic ratio (O/Sn) of oxygen (O) to tin (Sn) being more than 1.50 and equal to or less than 2.0, and with a film thickness of 25 nm or more and 45 nm or less. Consequently, the shadowing effect of a reflective photomask for pattern transfer using extreme ultraviolet light as a light source is suppressed or reduced to improve the performance of transfer to a semiconductor substrate, and further, the cleaning resistance of the light absorbing layer is improved.
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公开(公告)号：US09921465B2
公开(公告)日：2018-03-20
申请号：US15072164
申请日：2016-03-16
Applicant: Toppan Printing Co., Ltd.
Inventor： Shinpei Kondo , Norihito Fukugami
CPC classification number: G03F1/24
Abstract: A reflective mask reducing reflection of out-of-band light. The reflective mask includes a light shielding frame formed in a mask region corresponding to a boundary region of a chip on a semiconductor substrate multiply exposed. The substrate of the light shielding frame includes a layer having a different refractive index or includes pores to change the path of incident out-of-band light to thereby suppress the out-of-band light from being reflected off the conductive film. The substrate also includes a layer having a different refractive index relative to out-of-band light reflected off the conductive layer. With the reflective mask of this configuration, influence on the wiring pattern dimension can be reduced and productivity of the semiconductors can be improved.
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公开(公告)号：US09927692B2
公开(公告)日：2018-03-27
申请号：US15057548
申请日：2016-03-01
Applicant: Toppan Printing Co., Ltd.
Inventor： Genta Watanabe , Tomohiro Imoto , Norihito Fukugami
CPC classification number: G03F1/24
Abstract: A reflective photomask includes: a substrate; a multilayer reflection film formed on the substrate and reflecting exposure light including light with a wavelength of about 5 nm to 15 nm for lithography; an absorption film formed on the multilayer reflection film and absorbing the exposure light, and formed therein with a circuit pattern or a circuit pattern forming region where the circuit pattern is formed; a shading region formed by removing part of the multilayer reflection film and the absorption film on the substrate, on an outer peripheral side of the circuit pattern or the circuit pattern forming region to shade part of the exposure light reflected by the multilayer reflection film; and a plurality of projections formed at a pitch of about 3000 nm or less on part of a surface of the substrate exposed in the shading region, and suppressing reflection of out-of-band light with a wavelength of about 140 nm to 800 nm included in the exposure light and incident on the shading region.
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公开(公告)号：US09285672B2
公开(公告)日：2016-03-15
申请号：US14187885
申请日：2014-02-24
Applicant: TOPPAN PRINTING CO., LTD.
Inventor： Norihito Fukugami , Yo Sakata , Kazuaki Matsui , Genta Watanabe
Abstract: A reflective mask having a light-shielding frame with high light-shielding performance, and a method for manufacturing thereof. In a reflective mask having a light-shielding frame dug into a multilayered reflective layer, when side etching is performed or processing to obtain a reverse tapered shape is performed only on the multilayered reflective layer, it becomes possible to suppress reflection of EUV light (extreme ultraviolet light) in the vicinity of the edge of the light-shielding frame, provide a reflective mask having high light-shielding ability, and form a transcription pattern with high accuracy.
Abstract translation: 具有遮光性能好的遮光框的反射罩及其制造方法。 在具有被切割成多层反射层的遮光框的反射掩模中，当进行侧面蚀刻时，仅在多层反射层上进行反转锥形形状的处理，可以抑制EUV光的反射（极端 紫外光）在遮光框的边缘附近，提供了具有高遮光能力的反射掩模，并且以高精度形成转录图案。
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10.发明申请REFLECTIVE MASK BLANK AND REFLECTIVE MASK, AND METHODS FOR MANUFACTURING REFLECTIVE MASK BLANK AND REFLECTIVE MASK 有权反射面罩和反光面罩，以及制造反光面罩和反光面罩的方法公开(公告)号：US20140212795A1
公开(公告)日：2014-07-31
申请号：US14227705
申请日：2014-03-27
Applicant: TOPPAN PRINTING CO., LTD.
Inventor： Masahito TANABE , Norihito Fukugami , Yo Sakata , Tooru Komizo , Takashi Haraguchi
IPC: G03F1/24
Abstract: A reflective mask blank, a reflective mask, and methods for manufacturing those, which suppress reflectance at a light-shielding frame. The reflective mask includes a substrate, a multilayered reflective layer formed on the substrate, an absorption layer formed on the multilayered reflective layer, and a frame-shaped light-shielding frame area at which the absorption layer has a film thickness larger than a film thickness at other areas. The multilayered reflective layer is diffused and mixed at the light-shielding frame area through melting.
Abstract translation: 反射型掩模坯料，反射型掩模，以及抑制遮光框的反射率的制造方法。 反射掩模包括基板，形成在基板上的多层反射层，形成在多层反射层上的吸收层和吸收层的膜厚大于膜厚的框状遮光框区域 在其他地区。 多层反射层通过熔化在遮光框架区域扩散混合。
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