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公开(公告)号:US11906896B2
公开(公告)日:2024-02-20
申请号:US17292409
申请日:2019-11-01
Applicant: TOPPAN PRINTING CO., LTD.
Inventor: Toru Komizo , Norihito Fukugami , Genta Watanabe , Eisuke Narita
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: There is provided a reflective photomask blank and a reflective photomask having good irradiation resistance and capable of obtaining good transfer performance. A reflective photomask blank (10) contains a reflective layer (2) reflecting incident light and an absorption layer (4) absorbing incident light, which are formed in this order on one surface side of a substrate (1). The absorption layer (4) contains a first material selected from the group consisting of tin, indium, and tellurium and a second material containing one or two or more kinds of materials selected from the group consisting of transition metals, bismuth (Bi), and silicon (Si) at least in the outermost layer. The content of the second material is more than 20 at and less than 50 at % in the same laver.
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公开(公告)号:US20140170536A1
公开(公告)日:2014-06-19
申请号:US14187885
申请日:2014-02-24
Applicant: TOPPAN PRINTING CO., LTD.
Inventor: Norihito Fukugami , Yo Sakata , Kazuaki Matsui , Genta Watanabe
IPC: G03F1/24
Abstract: A reflective mask having a light-shielding frame with high light-shielding performance, and a method for manufacturing thereof. In a reflective mask having a light-shielding frame dug into a multilayered reflective layer, when side etching is performed or processing to obtain a reverse tapered shape is performed only on the multilayered reflective layer, it becomes possible to suppress reflection of EUV light (extreme ultraviolet light) in the vicinity of the edge of the light-shielding frame, provide a reflective mask having high light-shielding ability, and form a transcription pattern with high accuracy.
Abstract translation: 具有遮光性能好的遮光框的反射罩及其制造方法。 在具有被切割成多层反射层的遮光框的反射掩模中,当进行侧面蚀刻时,仅在多层反射层上进行反转锥形形状的处理,可以抑制EUV光的反射(极端 紫外光)在遮光框的边缘附近,提供了具有高遮光能力的反射掩模,并且以高精度形成转录图案。
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公开(公告)号:US09927692B2
公开(公告)日:2018-03-27
申请号:US15057548
申请日:2016-03-01
Applicant: Toppan Printing Co., Ltd.
Inventor: Genta Watanabe , Tomohiro Imoto , Norihito Fukugami
CPC classification number: G03F1/24
Abstract: A reflective photomask includes: a substrate; a multilayer reflection film formed on the substrate and reflecting exposure light including light with a wavelength of about 5 nm to 15 nm for lithography; an absorption film formed on the multilayer reflection film and absorbing the exposure light, and formed therein with a circuit pattern or a circuit pattern forming region where the circuit pattern is formed; a shading region formed by removing part of the multilayer reflection film and the absorption film on the substrate, on an outer peripheral side of the circuit pattern or the circuit pattern forming region to shade part of the exposure light reflected by the multilayer reflection film; and a plurality of projections formed at a pitch of about 3000 nm or less on part of a surface of the substrate exposed in the shading region, and suppressing reflection of out-of-band light with a wavelength of about 140 nm to 800 nm included in the exposure light and incident on the shading region.
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公开(公告)号:US09285672B2
公开(公告)日:2016-03-15
申请号:US14187885
申请日:2014-02-24
Applicant: TOPPAN PRINTING CO., LTD.
Inventor: Norihito Fukugami , Yo Sakata , Kazuaki Matsui , Genta Watanabe
Abstract: A reflective mask having a light-shielding frame with high light-shielding performance, and a method for manufacturing thereof. In a reflective mask having a light-shielding frame dug into a multilayered reflective layer, when side etching is performed or processing to obtain a reverse tapered shape is performed only on the multilayered reflective layer, it becomes possible to suppress reflection of EUV light (extreme ultraviolet light) in the vicinity of the edge of the light-shielding frame, provide a reflective mask having high light-shielding ability, and form a transcription pattern with high accuracy.
Abstract translation: 具有遮光性能好的遮光框的反射罩及其制造方法。 在具有被切割成多层反射层的遮光框的反射掩模中,当进行侧面蚀刻时,仅在多层反射层上进行反转锥形形状的处理,可以抑制EUV光的反射(极端 紫外光)在遮光框的边缘附近,提供了具有高遮光能力的反射掩模,并且以高精度形成转录图案。
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