公开(公告)号：US08753786B2

公开(公告)日：2014-06-17

申请号：US13682188

申请日：2012-11-20

Applicant: Shin-Etsu Chemical Co., Ltd. ,  Toppan Printing Co., Ltd.

Inventor： Hiroki Yoshikawa ,  Yukio Inazuki ,  Ryuji Koitabashi ,  Hideo Kaneko ,  Yosuke Kojima ,  Takashi Haraguchi ,  Tomohito Hirose

IPC: G03F1/26 ,  G03F1/32

CPC classification number: G03F1/32 ,  G03F1/26

Abstract: A light pattern exposure method is by irradiating ArF excimer laser light to a resist film through a halftone phase shift mask. The mask includes a transparent substrate and a pattern of halftone phase shift film of a material comprising a transition metal, silicon, nitrogen and oxygen and having an atomic ratio (Met/Si) of 0.18-0.25, a nitrogen content of 25-50 atom %, and an oxygen content of 5-20 atom %. The mask may be irradiated with ArF excimer laser light in a cumulative dose of at least 10 kJ/cm2.

Abstract translation: 光图案曝光方法是通过半色调相移掩模将ArF准分子激光照射到抗蚀剂膜上。 掩模包括透明基板和包含过渡金属，硅，氮和氧并且原子比（Met / Si）为0.18-0.25，氮含量为25-50原子的材料的半色调相移膜的图案 ％，氧含量为5-20原子％。 可以以至少10kJ / cm 2的累积剂量用ArF准分子激光照射掩模。

公开(公告)号：US08753787B2

公开(公告)日：2014-06-17

申请号：US13682228

申请日：2012-11-20

Applicant: Shin-Etsu Chemical Co., Ltd. ,  Toppan Printing Co., Ltd.

Inventor： Hiroki Yoshikawa ,  Yukio Inazuki ,  Ryuji Koitabashi ,  Hideo Kaneko ,  Yosuke Kojima ,  Takashi Haraguchi ,  Tomohito Hirose

IPC: G03F1/68 ,  G03F1/50

CPC classification number: G03F1/00 ,  G03F1/32 ,  G03F1/60

Abstract: A light pattern exposure method is by irradiating ArF excimer laser light to a resist film through a photomask. The photomask includes a transparent substrate and a pattern of optical film of a material comprising a transition metal, silicon, nitrogen and oxygen, with contents thereof falling in a specific range. The photomask may be irradiated with ArF excimer laser light in a cumulative dose of at least 10 kJ/cm2.

Abstract translation: 光图案曝光方法是通过光掩模将ArF准分子激光照射到抗蚀剂膜上。 光掩模包括透明基板和包含过渡金属，硅，氮和氧的材料的光学膜图案，其内容物落在特定范围内。 可以以至少10kJ / cm 2的累积剂量用ArF准分子激光照射光掩模。

公开(公告)号：US11187974B2

公开(公告)日：2021-11-30

申请号：US16578938

申请日：2019-09-23

Applicant: TOPPAN PRINTING CO., LTD.

Inventor： Yoshifumi Sakamoto ,  Yosuke Kojima ,  Tatsuya Nagatomo

IPC: G03F1/32

Abstract: A photomask blank and a photomask having favorable wafer transfer characteristics and irradiation resistance. A photomask blank is for fabricating a photomask for an exposure wavelength of 193 nm, the photomask blank comprising: a light-transmissive substrate; a phase shift film formed on the light-transmissive substrate and providing phase shift effects of a light transmittance of at least 30% with respect to exposure light; and a light-shielding film formed on the phase shift film. The phase shift film is constituted by lamination of: a first phase shift film (that uses a silicon nitride-based material, has a refractive index n1 of 2.5 to 2.7, and an extinction coefficient k1 of 0.2 to 0.4; and a second phase shift film that uses a silicon oxynitride-based material, has a refractive index n2 of 1.55 to 2.20, and an extinction coefficient k2 greater than 0 but no greater than 0.1.