公开(公告)号：US20200066749A1

公开(公告)日：2020-02-27

申请号：US16284395

申请日：2019-02-25

Applicant: Toshiba Memory Corporation

Inventor： Hiroyuki YAMASAKI ,  Hideaki HARAKAWA

IPC: H01L27/11582 ,  H01L27/1157 ,  G11C16/04

Abstract: According to one embodiment, a semiconductor memory device includes first conductive films, a second conductive film, a first pillar including a first semiconductor film and a first insulator, a second semiconductor film, and a second pillar including a second insulator and a third conductive film. The first conductive films are stacked with respective insulator layers interposed therebetween. The second conductive film is provided above the first conductive films with an insulator layer interposed therebetween. The first semiconductor film penetrate the first conductive films in a stacking direction of the first conductive films. The first insulator is provided on a side surface of the first semiconductor film.

公开(公告)号：US20200075615A1

公开(公告)日：2020-03-05

申请号：US16296001

申请日：2019-03-07

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Atsushi OGA ,  Hideaki HARAKAWA ,  Satoshi NAGASHIMA ,  Natsuki FUKUDA

IPC: H01L27/11556 ,  H01L27/11582 ,  H01L21/762

Abstract: According to an embodiment, a semiconductor memory device includes: a first stacked body including a first semiconductor layer, a first memory film, a second semiconductor layer and a first insulating layer; a joining member provided on the first semiconductor layer, the second semiconductor layer, and the first insulating layer; a first layer provided above the joining member and covering the first semiconductor layer and the first memory film; a second layer provided above the joining member, located away from the first layer as viewed in a second direction perpendicular to the first direction, and covering the second semiconductor layer and the second memory film; a second stacked body including a third semiconductor layer, a fourth semiconductor layer, a fourth memory film and a second insulating layer.