公开(公告)号：US20200258722A1

公开(公告)日：2020-08-13

申请号：US16553982

申请日：2019-08-28

Applicant: Toshiba Memory Corporation

Inventor： Katsuaki NATORI ,  Hiroshi TOYODA ,  Masayuki KITAMURA ,  Takayuki BEPPU

IPC: H01J37/32 ,  H01L21/285 ,  H01L27/11582 ,  H01L21/673 ,  H01L21/28 ,  C23C16/455 ,  C23C16/06 ,  C23C16/44 ,  C23C16/458

Abstract: A method of manufacturing a semiconductor device includes placing a substrate in a housing, supplying first gas containing molybdenum to the housing to form a film that contains molybdenum, on the substrate, removing the substrate with the formed film from the hosing, and then supplying second gas containing chlorine to the housing to remove molybdenum deposited on a surface of the housing.

公开(公告)号：US20200091080A1

公开(公告)日：2020-03-19

申请号：US16280003

申请日：2019-02-19

Applicant: Toshiba Memory Corporation

Inventor： Satoshi WAKATSUKI ,  Katsuaki NATORI

IPC: H01L23/532 ,  H01L27/11582 ,  H01L21/28

Abstract: A semiconductor device includes a substrate. The semiconductor device further includes a wiring layer provided on the substrate, the wiring layer including a molybdenum layer including oxygen atoms as an impurity.

公开(公告)号：US20190259621A1

公开(公告)日：2019-08-22

申请号：US16031544

申请日：2018-07-10

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Katsuaki NATORI ,  Satoshi WAKATSUKI ,  Masayuki KITAMURA

IPC: H01L21/285 ,  H01L21/768

Abstract: A production method of a semiconductor device includes introducing a reduction gas for reducing metal to a space containing a target to be used as the semiconductor device. The method also includes introducing a material gas and a first gas simultaneously to the space on a basis of a predetermined partial pressure ratio after introducing the reduction gas, to form a film that contains the metal, on the target. The material gas etches the metal when only the material gas is flowed. The first gas is different from the material gas. The predetermined partial pressure ratio is a ratio of the material gas and the first gas.