公开(公告)号：US11069700B2

公开(公告)日：2021-07-20

申请号：US16555418

申请日：2019-08-29

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Koichi Sakata ,  Kazutaka Suzuki ,  Hiroaki Ashidate ,  Katsuhiro Sato ,  Satoshi Nakaoka

IPC: H01L27/11578 ,  H01L27/11565 ,  H01L27/11573 ,  H01L27/06 ,  H01L27/11582 ,  H01L27/11568

Abstract: A semiconductor storage device includes a first stacked body, a second stacked body, a first division film, a second division film, and a plurality of discrete films. The a first stacked body includes first electrode layers stacked in a first direction. The second stacked body, above the first stacked body, includes second electrode layers stacked in the first direction. The second semiconductor layer is electrically connected to the first semiconductor layer. The first division film, extending in the first direction through the first stacked body, divides the first stacked body in a second direction crossing the first direction. The second division film, extending in the first direction through the second stacked body, divides the second stacked body in the second direction. The discrete films, extending in the first direction through the second stacked body, are disposed above the first division film.

公开(公告)号：US11088113B2

公开(公告)日：2021-08-10

申请号：US16559521

申请日：2019-09-03

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Kazutaka Suzuki

IPC: H01L25/065 ,  H01L27/11582 ,  H01L23/00 ,  H01L25/00 ,  H01L27/088

Abstract: A semiconductor storage device includes a first chip bonded to a second chip. The first chip includes electrode layers stacked in a first direction, a pillar extending through the stacked electrode layers and including a semiconductor film, and a memory film between the semiconductor film and the electrode layers. The second chip includes a semiconductor substrate having transistors formed thereon, a wiring connected to the transistors and between the semiconductor substrate and the first chip, bonding pads at a level closer to the first chip than the transistors. The bonding pads have a bonding surface facing away from the first chip. An opening extends through the semiconductor substrate to the bonding surface of the bonding pad.