公开(公告)号：US11069700B2

公开(公告)日：2021-07-20

申请号：US16555418

申请日：2019-08-29

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Koichi Sakata ,  Kazutaka Suzuki ,  Hiroaki Ashidate ,  Katsuhiro Sato ,  Satoshi Nakaoka

IPC: H01L27/11578 ,  H01L27/11565 ,  H01L27/11573 ,  H01L27/06 ,  H01L27/11582 ,  H01L27/11568

Abstract: A semiconductor storage device includes a first stacked body, a second stacked body, a first division film, a second division film, and a plurality of discrete films. The a first stacked body includes first electrode layers stacked in a first direction. The second stacked body, above the first stacked body, includes second electrode layers stacked in the first direction. The second semiconductor layer is electrically connected to the first semiconductor layer. The first division film, extending in the first direction through the first stacked body, divides the first stacked body in a second direction crossing the first direction. The second division film, extending in the first direction through the second stacked body, divides the second stacked body in the second direction. The discrete films, extending in the first direction through the second stacked body, are disposed above the first division film.

公开(公告)号：US11171020B2

公开(公告)日：2021-11-09

申请号：US16548263

申请日：2019-08-22

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Satoshi Nakaoka ,  Katsuhiro Sato ,  Hiroaki Ashidate ,  Shinsuke Muraki ,  Yuji Hashimoto

IPC: H01L21/67 ,  H01L21/311

Abstract: A substrate treatment apparatus according to an embodiment includes a treatment tank, a container, a measuring instrument, and a controller. The treatment tank stores a chemical solution to treat a substrate. The container contains a liquid including ammonia from which a gas discharged from the treatment tank is gas-liquid separated. The measuring instrument measures an amount of the ammonia included in the liquid over time. The controller controls the treatment of the substrate based on the amount of the ammonia.

公开(公告)号：US10978316B2

公开(公告)日：2021-04-13

申请号：US16045786

申请日：2018-07-26

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Satoshi Nakaoka ,  Tomohiko Sugita ,  Shinsuke Kimura ,  Hiroaki Ashidate ,  Katsuhiro Sato

IPC: H01L21/67 ,  H01L21/673 ,  H01L21/677 ,  B08B3/10 ,  B08B3/08

Abstract: A semiconductor processing device according to an embodiment includes a processing tank configured to store a chemical therein to allow a semiconductor substrate to be immersed in the chemical. A gas supply part is provided below the semiconductor substrate accommodated in the processing tank and is configured to supply air bubbles to the chemical from below the semiconductor substrate. A chemical supply part is provided above the gas supply part and below the semiconductor substrate and is configured to discharge the chemical caused to circulate from the processing tank, towards the air bubbles appearing from the gas supply part.