公开(公告)号：US20190385867A1

公开(公告)日：2019-12-19

申请号：US16268538

申请日：2019-02-06

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Tomohiko SUGITA ,  Katsuhiro Sato ,  Hiroaki Ashidate

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/306 ,  H01L21/02

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a substrate holder configured to hold a plurality of substrates such that the substrates are arranged in parallel to each other. The apparatus further includes a fluid injector including a plurality of openings that inject fluid to areas in which distances from surfaces of the substrates are within distances between centers of the substrates adjacent to each other, the fluid injector being configured to change injection directions of the fluid injected from the openings in planes that are parallel to the surfaces of the substrates by self-oscillation.

公开(公告)号：US12027380B2

公开(公告)日：2024-07-02

申请号：US17464007

申请日：2021-09-01

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Tomohiko Sugita ,  Katsuhiro Sato ,  Hiroaki Ashidate

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/306 ,  H01L21/687

CPC classification number: H01L21/67017 ,  H01L21/02041 ,  H01L21/306 ,  H01L21/67057 ,  H01L21/67086 ,  H01L21/68771 ,  H01L21/6708

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a substrate holder configured to hold a plurality of substrates such that the substrates are arranged in parallel to each other. The apparatus further includes a fluid injector including a plurality of openings that inject fluid to areas in which distances from surfaces of the substrates are within distances between centers of the substrates adjacent to each other, the fluid injector being configured to change injection directions of the fluid injected from the openings in planes that are parallel to the surfaces of the substrates by self-oscillation.

公开(公告)号：US11171020B2

公开(公告)日：2021-11-09

申请号：US16548263

申请日：2019-08-22

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Satoshi Nakaoka ,  Katsuhiro Sato ,  Hiroaki Ashidate ,  Shinsuke Muraki ,  Yuji Hashimoto

IPC: H01L21/67 ,  H01L21/311

Abstract: A substrate treatment apparatus according to an embodiment includes a treatment tank, a container, a measuring instrument, and a controller. The treatment tank stores a chemical solution to treat a substrate. The container contains a liquid including ammonia from which a gas discharged from the treatment tank is gas-liquid separated. The measuring instrument measures an amount of the ammonia included in the liquid over time. The controller controls the treatment of the substrate based on the amount of the ammonia.

公开(公告)号：US10978316B2

公开(公告)日：2021-04-13

申请号：US16045786

申请日：2018-07-26

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Satoshi Nakaoka ,  Tomohiko Sugita ,  Shinsuke Kimura ,  Hiroaki Ashidate ,  Katsuhiro Sato

IPC: H01L21/67 ,  H01L21/673 ,  H01L21/677 ,  B08B3/10 ,  B08B3/08

Abstract: A semiconductor processing device according to an embodiment includes a processing tank configured to store a chemical therein to allow a semiconductor substrate to be immersed in the chemical. A gas supply part is provided below the semiconductor substrate accommodated in the processing tank and is configured to supply air bubbles to the chemical from below the semiconductor substrate. A chemical supply part is provided above the gas supply part and below the semiconductor substrate and is configured to discharge the chemical caused to circulate from the processing tank, towards the air bubbles appearing from the gas supply part.

公开(公告)号：US20190259639A1

公开(公告)日：2019-08-22

申请号：US16045786

申请日：2018-07-26

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Satoshi NAKAOKA ,  Tomohiko Sugita ,  Shinsuke Kimura ,  Hiroaki Ashidate ,  Katsuhiro Sato

IPC: H01L21/67

Abstract: A semiconductor processing device according to an embodiment includes a processing tank configured to store a chemical therein to allow a semiconductor substrate to be immersed in the chemical. A gas supply part is provided below the semiconductor substrate accommodated in the processing tank and is configured to supply air bubbles to the chemical from below the semiconductor substrate. A chemical supply part is provided above the gas supply part and below the semiconductor substrate and is configured to discharge the chemical caused to circulate from the processing tank, towards the air bubbles appearing from the gas supply part.

公开(公告)号：US10090351B2

公开(公告)日：2018-10-02

申请号：US15588149

申请日：2017-05-05

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Hiroaki Ashidate ,  Kazumasa Tanida

IPC: H01L27/14 ,  H01L27/146 ,  H01L23/00

Abstract: A semiconductor device according to an embodiment includes a low-adhesion film, a pair of substrates, and a metal electrode. The low-adhesion film has lower adhesion to metal than a semiconductor oxide film. The pair of substrates is provided with the low-adhesion film interposed therebetween. The metal electrode passes through the low-adhesion film and connects the pair of substrates, and includes, between the pair of substrates, a part thinner than parts embedded in the pair of substrates. A portion of the metal electrode embedded in one substrate is provided with a gap interposed between the portion and the low-adhesion film on the other substrate.

公开(公告)号：US11069700B2

公开(公告)日：2021-07-20

申请号：US16555418

申请日：2019-08-29

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Koichi Sakata ,  Kazutaka Suzuki ,  Hiroaki Ashidate ,  Katsuhiro Sato ,  Satoshi Nakaoka

IPC: H01L27/11578 ,  H01L27/11565 ,  H01L27/11573 ,  H01L27/06 ,  H01L27/11582 ,  H01L27/11568

Abstract: A semiconductor storage device includes a first stacked body, a second stacked body, a first division film, a second division film, and a plurality of discrete films. The a first stacked body includes first electrode layers stacked in a first direction. The second stacked body, above the first stacked body, includes second electrode layers stacked in the first direction. The second semiconductor layer is electrically connected to the first semiconductor layer. The first division film, extending in the first direction through the first stacked body, divides the first stacked body in a second direction crossing the first direction. The second division film, extending in the first direction through the second stacked body, divides the second stacked body in the second direction. The discrete films, extending in the first direction through the second stacked body, are disposed above the first division film.

公开(公告)号：US10109508B2

公开(公告)日：2018-10-23

申请号：US15446966

申请日：2017-03-01

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Hiroaki Ashidate ,  Katsuhiro Sato

IPC: H01L21/67 ,  H01L21/311

Abstract: A substrate processing device includes a bath configured to accommodate a plurality of substrates and configured to store a liquid for etching the plurality of substrates, a plurality of bubble generators configured to generate bubbles in the liquid, the bubble generators provided so as to correspond to each of the plurality of substrates, a measurement device configured to measure the generation state of the bubbles of at least one of the plurality of bubble generators, and a control device configured to individually control at least one of the plurality of bubble generators based on the measurement result of the measurement device.