公开(公告)号：US12027380B2

公开(公告)日：2024-07-02

申请号：US17464007

申请日：2021-09-01

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Tomohiko Sugita ,  Katsuhiro Sato ,  Hiroaki Ashidate

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/306 ,  H01L21/687

CPC classification number: H01L21/67017 ,  H01L21/02041 ,  H01L21/306 ,  H01L21/67057 ,  H01L21/67086 ,  H01L21/68771 ,  H01L21/6708

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a substrate holder configured to hold a plurality of substrates such that the substrates are arranged in parallel to each other. The apparatus further includes a fluid injector including a plurality of openings that inject fluid to areas in which distances from surfaces of the substrates are within distances between centers of the substrates adjacent to each other, the fluid injector being configured to change injection directions of the fluid injected from the openings in planes that are parallel to the surfaces of the substrates by self-oscillation.

公开(公告)号：US10199209B2

公开(公告)日：2019-02-05

申请号：US14986977

申请日：2016-01-04

Applicant: Toshiba Memory Corporation

Inventor： Tomohiko Sugita ,  Katsuhiro Sato ,  Hiroyasu Iimori ,  Yoshihiro Ogawa

IPC: H01L21/02 ,  H01L21/67

Abstract: In one embodiment, a substrate treatment apparatus includes cleaning and rinse modules configured to clean and rinse a surface of a substrate provided with a pattern, and a solidifying agent containing liquid supplying module configured to supply a solidifying agent containing liquid that contains a solidifying agent to the cleaned and rinsed surface of the substrate. The apparatus further includes a precipitation module configured to precipitate the solidifying agent as solid on the surface of the substrate, and a decomposition module configured to decompose and gasify the solid to remove the solid from the surface of the substrate. The solidifying agent contains an ammonium salt, and the ammonium salt contains an ammonium ion or an ion having a structure in which at least one of four hydrogen atoms of an ammonium ion is substituted with another atom or atom group.

公开(公告)号：US10147619B2

公开(公告)日：2018-12-04

申请号：US15244087

申请日：2016-08-23

Applicant: Toshiba Memory Corporation

Inventor： Katsuhiro Sato ,  Kaori Deura ,  Yoshinori Kitamura ,  Takahiro Terada ,  Yoshihiro Ogawa ,  Yuji Hashimoto ,  Masaaki Hirakawa ,  Yukako Murakami ,  Hideaki Hirabayashi

IPC: H01L21/306 ,  H01L21/67 ,  H01L21/311

Abstract: A substrate treatment apparatus according to an embodiment includes a treatment part, a cyclic path, a heater, and a first injector. The treatment part is supplied with an etchant containing phosphoric acid and a silica deposition suppressor, and brings a substrate having a silicon nitride film on a surface thereof into contact with the etchant to remove the silicon nitride film from the substrate. The cyclic path circulates the etchant in the treatment part. The heater heats the etchant. The first injector is provided on the cyclic path, and injects the silica deposition suppressor into the etchant.

公开(公告)号：US10008400B2

公开(公告)日：2018-06-26

申请号：US15449308

申请日：2017-03-03

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Shinsuke Muraki ,  Hiroaki Yamada ,  Yuya Akeboshi ,  Katsuhiro Sato

IPC: H01L21/00 ,  H01L21/67 ,  H01L21/306 ,  H01L21/28 ,  C23F1/16 ,  H01L21/3213

CPC classification number: H01L21/67242 ,  C23F1/16 ,  C23F1/26 ,  H01L21/28 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/67017 ,  H01L21/67057 ,  H01L21/67075 ,  H01L21/67086

Abstract: A substrate processing device capable of stabilizing an etching amount of a metal film provided on a substrate is provided. The substrate processing device includes a first container, a second container and a control unit. The first container stores a first liquid in which an acid solution containing phosphoric acid and water are mixed. The first liquid is capable of etching a metal film provided on a substrate. The second container stores a second liquid containing water. The control unit controls supply of the second liquid from the second container to the first container such that a water concentration of the first liquid increases over time corresponding to change in a concentration of the phosphoric acid in the first liquid.

公开(公告)号：US11069700B2

公开(公告)日：2021-07-20

申请号：US16555418

申请日：2019-08-29

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Koichi Sakata ,  Kazutaka Suzuki ,  Hiroaki Ashidate ,  Katsuhiro Sato ,  Satoshi Nakaoka

IPC: H01L27/11578 ,  H01L27/11565 ,  H01L27/11573 ,  H01L27/06 ,  H01L27/11582 ,  H01L27/11568

Abstract: A semiconductor storage device includes a first stacked body, a second stacked body, a first division film, a second division film, and a plurality of discrete films. The a first stacked body includes first electrode layers stacked in a first direction. The second stacked body, above the first stacked body, includes second electrode layers stacked in the first direction. The second semiconductor layer is electrically connected to the first semiconductor layer. The first division film, extending in the first direction through the first stacked body, divides the first stacked body in a second direction crossing the first direction. The second division film, extending in the first direction through the second stacked body, divides the second stacked body in the second direction. The discrete films, extending in the first direction through the second stacked body, are disposed above the first division film.

公开(公告)号：US10304704B2

公开(公告)日：2019-05-28

申请号：US15046781

申请日：2016-02-18

Applicant: Toshiba Memory Corporation

Inventor： Katsuhiro Sato ,  Junichi Igarashi ,  Yoshihiro Ogawa

IPC: F26B5/14 ,  H01L21/67 ,  H01L21/02

Abstract: A substrate processing method according to an embodiment is a substrate processing method for drying a substrate. The substrate processing method includes supplying a solution in which a sublimation material is dissolved in a first solvent to a surface of a cleaned substrate. The substrate processing method includes eliminating at least a portion of association states of the sublimation material. The substrate processing method includes precipitating the sublimation material on the surface of the substrate. The substrate processing method includes removing the precipitated sublimation material by sublimation.

公开(公告)号：US20190074171A1

公开(公告)日：2019-03-07

申请号：US15904595

申请日：2018-02-26

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Tomonori Harada ,  Tatsuhiko Koide ,  Katsuhiro Sato

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/02021 ,  H01L21/02019 ,  H01L21/6708 ,  H01L21/68764

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a supporter configured to support a wafer. The apparatus further includes a first member including a first portion that faces a first region on an upper face of the wafer and a second portion that intervenes between the wafer and the first portion. The apparatus further includes a second member including a third portion that faces a second region on the upper face of the wafer and a fourth portion that intervenes between the wafer and the third portion. The apparatus further includes a first liquid feeder configured to feed a first liquid for processing the wafer to the first region, a first gas feeder configured to feed a first gas between the wafer and the first portion, and a second gas feeder configured to feed a second gas between the wafer and the second portion.

公开(公告)号：US10109508B2

公开(公告)日：2018-10-23

申请号：US15446966

申请日：2017-03-01

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Hiroaki Ashidate ,  Katsuhiro Sato

IPC: H01L21/67 ,  H01L21/311

Abstract: A substrate processing device includes a bath configured to accommodate a plurality of substrates and configured to store a liquid for etching the plurality of substrates, a plurality of bubble generators configured to generate bubbles in the liquid, the bubble generators provided so as to correspond to each of the plurality of substrates, a measurement device configured to measure the generation state of the bubbles of at least one of the plurality of bubble generators, and a control device configured to individually control at least one of the plurality of bubble generators based on the measurement result of the measurement device.

公开(公告)号：US10403524B2

公开(公告)日：2019-09-03

申请号：US15989887

申请日：2018-05-25

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Shinsuke Muraki ,  Hiroaki Yamada ,  Yuya Akeboshi ,  Katsuhiro Sato

IPC: H01L21/67 ,  H01L21/3213 ,  H01L21/306 ,  H01L21/28 ,  C23F1/16 ,  C23F1/26

Abstract: A substrate processing device capable of stabilizing an etching amount of a metal film provided on a substrate is provided. The substrate processing device includes a first container, a second container and a control unit. The first container stores a first liquid in which an acid solution containing phosphoric acid and water are mixed. The first liquid is capable of etching a metal film provided on a substrate. The second container stores a second liquid containing water. The control unit controls supply of the second liquid from the second container to the first container such that a water concentration of the first liquid increases over time corresponding to change in a concentration of the phosphoric acid in the first liquid.

公开(公告)号：US20190259639A1

公开(公告)日：2019-08-22

申请号：US16045786

申请日：2018-07-26

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Satoshi NAKAOKA ,  Tomohiko Sugita ,  Shinsuke Kimura ,  Hiroaki Ashidate ,  Katsuhiro Sato

IPC: H01L21/67

Abstract: A semiconductor processing device according to an embodiment includes a processing tank configured to store a chemical therein to allow a semiconductor substrate to be immersed in the chemical. A gas supply part is provided below the semiconductor substrate accommodated in the processing tank and is configured to supply air bubbles to the chemical from below the semiconductor substrate. A chemical supply part is provided above the gas supply part and below the semiconductor substrate and is configured to discharge the chemical caused to circulate from the processing tank, towards the air bubbles appearing from the gas supply part.