MEMORY SYSTEM AND METHOD
    1.
    发明申请

    公开(公告)号:US20190087324A1

    公开(公告)日:2019-03-21

    申请号:US15914604

    申请日:2018-03-07

    Abstract: According to one embodiment, a memory system includes a non-volatile first memory, and a controller. The controller associates a first number of consecutive logical addresses with the first number of physical addresses which are included in a second number of consecutive physical addresses of the first memory. The controller executes a first updating and a second updating. The first updating includes associating a first physical address among the second number of physical addresses with a first logical address. The second updating includes obtaining a second logical address which is away from the first logical address by a value corresponding to distance information on the basis of origin information and the distance information and associating, with the second logical address, a second physical address which had been associated with the first logical address before the first updating is executed

    MEMORY SYSTEM FOR CONTROLLING MAGNETIC MEMORY

    公开(公告)号:US20200294610A1

    公开(公告)日:2020-09-17

    申请号:US16562482

    申请日:2019-09-06

    Abstract: According to one embodiment, a magnetic memory puts a first magnetic domain having a magnetization direction which is the same as or opposite to a magnetic domain of a first layer of a magnetic memory line, into the first layer, based on a value of data and the magnetization direction of the first layer. When receiving a first command, the magnetic memory puts a first additional magnetic domain and a second additional magnetic domain having a magnetization direction opposite to the first additional magnetic domain into the magnetic memory line. When receiving a second command, the magnetic memory read the first and second additional magnetic domains to determine the magnetization direction of the first magnetic domain.

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