公开(公告)号：US20190296084A1

公开(公告)日：2019-09-26

申请号：US16123022

申请日：2018-09-06

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Shota MOMBETSU ,  Akira YOTSUMOTO ,  Tetsu MOROOKA ,  Mutsumi OKAJIMA

IPC: H01L27/24 ,  G11C13/00

Abstract: A storage device includes a substrate; a plurality of insulating layers extending in a first direction; a plurality of first conductive layers extending in the first direction, and stacked alternately with the plurality of insulating layers along a second direction that intersects the first direction and is perpendicular to the substrate; a second conductive layer extending in the second direction; a recording layer provided between the second conductive layer and the plurality of first conductive layers; a first transistor electrically connected to the second conductive layer; a second transistor provided adjacent to the first transistor in a third direction that intersects the first direction and the second direction and is parallel to the substrate; and a first insulator provided on the second transistor.