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公开(公告)号:US10854488B2
公开(公告)日:2020-12-01
申请号:US16522747
申请日:2019-07-26
IPC分类号: H01L21/677 , B25J15/00 , H01L21/687 , H01L21/67 , B25J11/00 , H01L21/673 , C23C16/458 , C23C16/44
摘要: A wafer conveying apparatus conveying a wafer onto a supporting table in manufacturing a semiconductor. A first arm retains the wafer to move to an upper region of the supporting table, and is retracted from the upper region of the supporting table after the wafer is elevated. A second arm contacts the wafer by an opening provided in the supporting table to elevate the wafer, and lowers the wafer to place the wafer on the supporting table.
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公开(公告)号:US10403531B2
公开(公告)日:2019-09-03
申请号:US15915792
申请日:2018-03-08
IPC分类号: H01L21/67 , H01L21/673 , H01L21/687 , H01L21/677 , B25J11/00 , B25J15/00 , C23C16/44
摘要: In one embodiment, a semiconductor manufacturing apparatus includes a container to contain wafers, and supporting tables provided in the container so as to be stacked on one another, and each including a supporting face that comes into contact with a wafer to support the wafer. The apparatus further includes supporting columns to join the supporting tables together and provided at positions where the supporting columns are contained inside outer circumferences of the supporting tables. The apparatus further includes a gas feeder to feed a gas to the wafers on the supporting tables, and a gas discharger to discharge the gas fed to the wafers on the supporting tables. Each of the supporting tables includes a first upper face as the supporting face, and a second upper face provided so as to surround the first upper face at a level higher than a level of the first upper face.
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公开(公告)号:US09920425B2
公开(公告)日:2018-03-20
申请号:US14574534
申请日:2014-12-18
发明人: Takayuki Matsui , Hajime Nagano
IPC分类号: C23C16/44 , C23C16/34 , C23C16/455 , H01L21/02
CPC分类号: C23C16/4412 , C23C16/345 , C23C16/45502 , C23C16/45546 , H01L21/0217 , H01L21/02211 , H01L21/0228
摘要: A semiconductor manufacturing apparatus according to an embodiment includes a chamber that is capable of accommodating therein a plurality of semiconductor substrates. A gas supply part supplies process gas to the chamber. A top exhaust port is connected to a top portion of the chamber and exhausts gas within the chamber. A bottom exhaust port is connected to a bottom portion of the chamber and exhausts gas within the chamber. A controller controls a timing of supplying process gas from the gas supply part and a timing of switching between exhaust from the top exhaust port and exhaust from the bottom exhaust port.
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